Method of manufacturing semiconductor for transistor and method of manufacturing the transistor

• US 8,460,985 B2
• Filed: 07/02/2010
• Issued: 06/11/2013
• Est. Priority Date: 11/20/2009
• Status: Active Grant

• Current Assignee: Samsung Display Company Limited (Samsung Electronics Co. Ltd.)
• Original Assignee: Samsung Display Company Limited (Samsung Electronics Co. Ltd.)
• Inventors: Ahn, Bo-Kyoung, Jang, Seon-Pil, Jo, Gug-Rae, Yoo, Hong-Suk, Kim, Chang-Hoon, Kim, Min-Uk, Bae, Ju-Han
• Primary Examiner(s): KUO, WENSING W
• Application Number:
  US12/829,977
• Publication Number:
  US 20110124152A1
• Time in Patent Office: 1,075 Days
• Field of Search: 438/104, 438/164, 438/165, 438/479, 438/795, 257/E21.461, 257/E21.471
• US Class Current: 438/165
• CPC Class Codes: C23C 18/1212 Zeolites, glasses
• CPC Class Codes: C23C 18/1216 Metal oxides C23C18/1212 takes precedence
• CPC Class Codes: C23C 18/143 Radiation by light, e.g. photolysis or pyrolysis
• CPC Class Codes: H01L 21/02554 Oxides
• CPC Class Codes: H01L 21/02565 Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
• CPC Class Codes: H01L 21/02614 Transformation of metal, e.g. oxidation, nitridation
• CPC Class Codes: H01L 21/02628 using solutions
• CPC Class Codes: H01L 21/268 using electromagnetic radiation, e.g. laser radiation
• CPC Class Codes: H01L 27/1225 with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate

Abstract

A method of manufacturing a semiconductor for a transistor that includes forming a precursor layer by coating a surface of an insulation substrate with a precursor solution for an oxide semiconductor, forming an oxide semiconductor by oxidizing a portion of the precursor layer, and removing a remaining precursor layer except for the oxide semiconductor.

Claims

1. A method of manufacturing a transistor, comprising:

forming a precursor layer by coating a surface of a substrate with a precursor solution for an oxide semiconductor;

forming the oxide semiconductor by oxidizing a portion of the precursor layer;

removing a remaining non-oxidized portion of the precursor layer using a solvent of the precursor solution;

forming a gate electrode overlapping the oxide semiconductor, after removing the non-oxidized portion of the precursor layer; and

forming a source electrode and a drain electrode overlapping the oxide semiconductor and facing the gate electrode.

2. The method of claim 1, wherein forming the precursor layer further comprises:

removing the solvent of the precursor layer by a heat treatment performed before forming the oxide semiconductor.

3. The method of claim 1, wherein oxidizing the portion of the precursor layer comprises irradiating the portion of the precursor layer with a laser.

4. The method of claim 3, wherein the irradiating comprises using a light exposer comprising a microlens array.

5. The method of claim 1, wherein coating the substrate comprises at least one of slit coating, area printing, inkjet printing, spin coating, dip coating, bar coating, screen printing, slide coating, roll coating, spray coating, dip-pen nanolithography, and nano-dispensing.

6. The method of claim 1, wherein the gate electrode, the source electrode, and the drain electrode comprise copper.

7. The method of claim 2, wherein the heat treatment is performed by heating the coated substrate at a temperature range of 90°

C. to 110°

C., for a time ranging from 80 seconds to 100 seconds.

8. The method of claim 1, wherein the solvent is an alcohol.

9. The method of claim 8, wherein the solvent comprises at least one compound selected from methanol, ethanol, propanol, isopropanol, 2-methoxyethanol, 2-ethoxyethanol, 2-propoxyethanol, 2-buthoxyethanol, butadiol, methylcellosolve, ethylcellosolve, ethyleneglycol, diethyleneglycolmethylether, diethyleneglycolethylether, dipropyleneglycolmethylether, toluene, xylene, hexane, heptane, octane, ethylacetate, butylacetate, diethyleneglycoldimethylether, diethyleneglycoldimethylethylether, methylmethoxypropionic acid, ethylethoxypropionic acid, ethyllactic acid, propyleneglycolmethyletheracetate, propyleneglycolmethylether, propyleneglycolpropylether, methylcellosolveacetate, ethylcellosolveacetate, diethyleneglycolmethylacetate, diethyleneglycolethylacetate, acetone, methylisobutylketone, cyclohexanone, dimethyl formamide(DMF), N,N-dimethyl acetamide(DMAc), N-methyl-2-pyrolidone, γ

-butyrolactone, diethylether, ethyleneglycoldimethylether, diglyme, tetrahydrofuran, acetylacetone, and acetonitrile.

10. The method of claim 4, wherein the irradiating comprises using radiation comprising a wavelength in the range of more than 100 nm to less than 500 nm.

11. The method of claim 1, wherein the precursor solution comprises a metal compound, a solution stabilizer, and a solvent, and the metal compound comprises at least one compound selected from a nitride, a salt, and a hydrate.

12. The method of claim 11, wherein:

the salt is selected from an acetate, a carbonyl, a carbonate, a nitrate, a sulfate, a phosphate, and a halide, and

a metal of the metal compound is selected from lithium (Li), sodium (Na), potassium (K), rubidium (Rb), cesium (Cs), beryllium (Be), magnesium (Mg), calcium (Ca), strontium (Sr), barium (Ba), titanium (Ti), zirconium (Zr), hafnium (Hf), vanadium (V), niobium (Nb), tantalum (Ta), chromium (Cr), molybdenum (Mo), tungsten (W), manganese (Mn), technetium (Tc), rhenium (Re), iron (Fe), ruthenium (Ru), osmium (Os), cobalt (Co), rhodium (Rh), iridium (Ir), nickel (Ni), palladium (Pd), platinum (Pt), copper (Cu), silver (Ag), gold (Au), Zinc (Zn), cadmium (Cd), mercury (Hg), boron (B), aluminum (Al), gallium (Ga), indium (In), thallium (Tl), silicon (Si), germanium (Ge), tin (Sn), lead (Pb), phosphorus (P), arsenic (As), antimony (Sb), and bismuth (Bi).

13. The method of claim 1, wherein the precursor layer comprises a thickness of more than 50 Å

, and the substrate comprises a glass material or a plastic material.