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Methods for manufacturing trench MOSFET with implanted drift region

  • US 8,461,001 B2
  • Filed: 12/09/2009
  • Issued: 06/11/2013
  • Est. Priority Date: 10/31/2007
  • Status: Active Grant
First Claim
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1. A method for manufacturing a trenched semiconductor power device comprising plurality of trenched gates surrounded by source regions near a top surface of an epitaxial layer encompassed in body regions, wherein said epitaxial layer is supported on a semiconductor substrate, said method comprising:

  • carrying out a tilt-angle implantation through sidewalls of trenches to form drift regions surrounding said trenches to provide drift regions below body regions and above said epitaxial layer for on-resistance reduction, and preventing a degraded breakdown voltage with a thicker oxide along a lower portion of trench sidewall and bottom wherein the thicker oxide having a greater thickness than an oxide layer along an upper portion of said trench sidewalls, and wherein the trenches have trench bottoms disposed below said drift regions extended downwardly to said epitaxial layer.

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