Method for manufacturing semiconductor device

• US 8,461,007 B2
• Filed: 04/21/2011
• Issued: 06/11/2013
• Est. Priority Date: 04/23/2010
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Yamazaki, Shunpei
• Primary Examiner(s): Garber, Charles
• Assistant Examiner(s): Stevenson, Andre C
• Application Number:
  US13/091,210
• Publication Number:
  US 20110263085A1
• Time in Patent Office: 782 Days
• Field of Search: 438/287
• US Class Current: 438/287
• CPC Class Codes: H01L 21/383 using diffusion into or out of a solid from or into a gaseous phase
• CPC Class Codes: H01L 21/477 Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering H01L21/38 - H01L21/449 and H01L21/461 - H01L21/475 take precedence
• CPC Class Codes: H01L 27/1225 with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
• CPC Class Codes: H01L 29/263 Amorphous materials
• CPC Class Codes: H01L 29/4908 for thin film semiconductor, e.g. gate of TFT
• CPC Class Codes: H01L 29/66969 of devices having semiconductor bodies not comprising group 14 or group 13/15 materials comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials, comprising cuprous oxide or cuprous iodide H01L21/02365
• CPC Class Codes: H01L 29/78 with field effect produced by an insulated gate H01L29/7725, H01L29/775, H01L29/778 take precedence
• CPC Class Codes: H01L 29/78603 characterised by the insulating substrate or support H01L29/78657 takes precedence
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate

Abstract

One object of one embodiment of the present invention is to provide a highly reliable semiconductor device including an oxide semiconductor, which has stable electrical characteristics. In a method for manufacturing a semiconductor device, a first insulating film is formed; source and drain electrodes and an oxide semiconductor film electrically connected to the source and drain electrodes are formed over the first insulating film; heat treatment is performed on the oxide semiconductor film so that a hydrogen atom in the oxide semiconductor film is removed; oxygen doping treatment is performed on the oxide semiconductor film, so that an oxygen atom is supplied into the oxide semiconductor film; a second insulating film is formed over the oxide semiconductor film; and a gate electrode is formed over the second insulating film so as to overlap with the oxide semiconductor film.

Claims

1. A method for manufacturing a semiconductor device, comprising:

forming a first insulating film;

forming source and drain electrodes over the first insulating film;

forming an oxide semiconductor over the first insulating film;

performing heat treatment on the oxide semiconductor film so that a hydrogen atom in the oxide semiconductor film is removed;

after the heat treatment, performing oxygen doping treatment on the oxide semiconductor film, so that an oxygen atom is supplied into the oxide semiconductor film;

after the oxygen doping treatment, forming a second insulating film over the oxide semiconductor film; and

forming a gate electrode over the second insulating film so as to overlap with the oxide semiconductor film,

wherein the oxygen doping treatment is performed so that the oxide semiconductor film includes an oxygen atom whose proportion is greater than a stoichiometric proportion of the oxide semiconductor film and less than twice the stoichiometric proportion, and

wherein the oxide semiconductor layer is electrically connected to the source and drain electrodes.

2. The method for manufacturing a semiconductor device, according to claim 1,

wherein one of the first insulating film and the second insulating film comprises an insulating film including a constituent element of the oxide semiconductor film.

3. The method for manufacturing a semiconductor device, according to claim 1,

wherein one of the first insulating film and the second insulating film comprises:

a third insulating film including a constituent element of the oxide semiconductor film; and

a fourth insulating film including an element different from the constituent element, and

wherein the third insulating film is interposed between the oxide semiconductor film and the fourth insulating film.

4. The method for manufacturing a semiconductor device, according to claim 1,

wherein one of the first insulating film and the second insulating film comprises an insulating film including a gallium oxide.

5. The method for manufacturing a semiconductor device, according to claim 1, further comprising:

forming an insulating film including nitrogen so as to cover the gate electrode.

6. A method for manufacturing a semiconductor device, comprising:

forming a first insulating film including an oxygen atom as a constituent;

performing oxygen doping treatment on the first insulating film so that an oxygen atom is supplied into the first insulating film;

forming source and drain electrodes over the first insulating film;

forming an oxide semiconductor over the first insulating film;

performing heat treatment on the oxide semiconductor film so that a hydrogen atom in the oxide semiconductor film is removed;

after the heat treatment, performing oxygen doping treatment on the oxide semiconductor film so that an oxygen atom is supplied into the oxide semiconductor film;

after the oxygen doping treatment on the oxide semiconductor film, forming a second insulating film including an oxygen atom as a constituent, over the oxide semiconductor film;

performing oxygen doping treatment on the second insulating film so that an oxygen atom is supplied into the second insulating film; and

forming a gate electrode over the second insulating film so as to overlap with the oxide semiconductor film,

wherein the oxide semiconductor layer is electrically connected to the source and drain electrodes.

7. The method for manufacturing a semiconductor device, according to claim 6,

wherein the oxygen doping treatment on the oxide semiconductor film is performed so that the oxide semiconductor film includes an oxygen atom whose proportion is greater than a stoichiometric proportion of the oxide semiconductor film and less than twice the stoichiometric proportion.

8. The method for manufacturing a semiconductor device, according to claim 6,

wherein one of the first insulating film and the second insulating film comprises an insulating film including a constituent element of the oxide semiconductor film.

9. The method for manufacturing a semiconductor device, according to claim 6,

wherein one of the first insulating film and the second insulating film comprises:

a third insulating film including a constituent element of the oxide semiconductor film; and

a fourth insulating film including an element different from the constituent element, and

wherein the third insulating film is interposed between the oxide semiconductor film and the fourth insulating film.

10. The method for manufacturing a semiconductor device, according to claim 6,

wherein one of the first insulating film and the second insulating film comprises an insulating film including a gallium oxide.

11. The method for manufacturing a semiconductor device, according to claim 6,

wherein one of the first insulating film and the second insulating film comprises:

a third insulating film including a gallium oxide; and

a fourth insulating film including a material different from a gallium oxide, and

wherein the third insulating film is interposed between the oxide semiconductor film and the fourth insulating film.

12. The method for manufacturing a semiconductor device, according to claim 6, further comprising:

forming an insulating film including nitrogen so as to cover the gate electrode.

13. A method for manufacturing a semiconductor device, comprising:

forming a first insulating film;

forming source and drain electrodes over the first insulating film;

forming an oxide semiconductor over the first insulating film;

performing heat treatment on the oxide semiconductor film so that a hydrogen atom in the oxide semiconductor film is removed;

after the heat treatment, forming a second insulating film over the oxide semiconductor film;

performing oxygen doping treatment on the oxide semiconductor film through the second insulating film, so that an oxygen atom is supplied into the oxide semiconductor film; and

forming a gate electrode over the second insulating film so as to overlap with the oxide semiconductor film,

wherein the oxide semiconductor layer is electrically connected to the source and drain electrodes.

14. The method for manufacturing a semiconductor device, according to claim 13, further comprising:

before forming the second insulating film, performing oxygen doping treatment on the oxide semiconductor film, so that an oxygen atom is supplied into the oxide semiconductor film.

15. The method for manufacturing a semiconductor device, according to claim 13,

wherein the oxygen doping treatment is performed so that the oxide semiconductor film includes an oxygen atom whose proportion is greater than a stoichiometric proportion of the oxide semiconductor film and less than twice the stoichiometric proportion.

16. The method for manufacturing a semiconductor device, according to claim 13,

wherein one of the first insulating film and the second insulating film comprises an insulating film including a constituent element of the oxide semiconductor film.

17. The method for manufacturing a semiconductor device, according to claim 13,

wherein one of the first insulating film and the second insulating film comprises:

a third insulating film including a constituent element of the oxide semiconductor film; and

a fourth insulating film including an element different from the constituent element, and

wherein the third insulating film is interposed between the oxide semiconductor film and the fourth insulating film.

18. The method for manufacturing a semiconductor device, according to claim 13,

wherein one of the first insulating film and the second insulating film comprises an insulating film including a gallium oxide.

19. The method for manufacturing a semiconductor device, according to claim 13,

wherein one of the first insulating film and the second insulating film comprises:

a third insulating film including a gallium oxide; and

a fourth insulating film including a material different from a gallium oxide, and

wherein the third insulating film is interposed between the oxide semiconductor film and the fourth insulating film.

20. The method for manufacturing a semiconductor device, according to claim 13, further comprising:

forming an insulating film including nitrogen so as to cover the gate electrode.

21. A method for manufacturing a semiconductor device, comprising:

forming a first insulating film;

forming source and drain electrodes over the first insulating film;

forming an oxide semiconductor over the first insulating film;

performing heat treatment on the oxide semiconductor film so that a hydrogen atom in the oxide semiconductor film is removed;

after the heat treatment, performing oxygen doping treatment on the oxide semiconductor film, so that an oxygen atom is supplied into the oxide semiconductor film;

after the oxygen doping treatment, forming a second insulating film over the oxide semiconductor film; and

forming a gate electrode over the second insulating film so as to overlap with the oxide semiconductor film,

wherein one of the first insulating film and the second insulating film comprises;

a third insulating film including a gallium oxide; and

a fourth insulating film including a material different from a gallium oxide,

wherein the third insulating film is interposed between the oxide semiconductor film and the fourth insulating film, and

wherein the oxide semiconductor layer is electrically connected to the source and drain electrodes.

22. The method for manufacturing a semiconductor device, according to claim 21, further comprising:

forming an insulating film including nitrogen so as to cover the gate electrode.

23. A method for manufacturing a semiconductor device, comprising:

forming a metal oxide film;

forming an oxide semiconductor film comprising a channel formation region over the metal oxide film, the oxide semiconductor film comprising oxygen and metal elements, the metal elements including indium; and

performing an oxygen doping treatment on the metal oxide film in order to reduce an amount of oxygen vacancy which is associated with a bond between indium and oxygen,

wherein the metal oxide film comprises oxygen and same metal elements as the metal elements of the oxide semiconductor film.

24. The method for manufacturing a semiconductor device, according to claim 23, wherein the metal oxide film is insulating.

25. The method for manufacturing a semiconductor device, according to claim 23, further comprising:

forming a gate electrode over the oxide semiconductor film.

26. The method for manufacturing a semiconductor device, according to claim 23, wherein the metal oxide film comprises gallium and oxygen.

27. The method for manufacturing a semiconductor device, according to claim 23, wherein at least part of the metal oxide film comprises oxygen at a concentration higher than a stoichiometric ratio in order to reduce an amount of oxygen vacancy which is associated with a bond between indium and oxygen.

28. The method for manufacturing a semiconductor device, according to claim 23, wherein at least part of the oxide semiconductor film comprises oxygen at a concentration higher than a stoichiometric ratio in order to reduce an amount of oxygen vacancy which is associated with a bond between indium and oxygen.

29. The method for manufacturing a semiconductor device, according to claim 23, further comprising:

heating the metal oxide film in order to reduce an amount of oxygen vacancy which is associated with a bond between indium and oxygen.

30. A method for manufacturing a semiconductor device, comprising:

forming a metal oxide film;

forming an oxide semiconductor film comprising a channel formation region over the metal oxide film, the oxide semiconductor film comprising oxygen and metal elements, the metal elements including indium; and

performing an oxygen doping treatment on the oxide semiconductor film in order to reduce an amount of oxygen vacancy which is associated with a bond between indium and oxygen,

wherein the metal oxide film comprises oxygen and same metal elements as the metal elements of the oxide semiconductor film.

31. The method for manufacturing a semiconductor device, according to claim 30, wherein the metal oxide film is insulating.

32. The method for manufacturing a semiconductor device, according to claim 30, further comprising:

forming a gate electrode over the oxide semiconductor film.

33. The method for manufacturing a semiconductor device, according to claim 30, wherein the metal oxide film comprises gallium and oxygen.

34. The method for manufacturing a semiconductor device, according to claim 30, wherein at least part of the metal oxide film comprises oxygen at a concentration higher than a stoichiometric ratio in order to reduce an amount of oxygen vacancy which is associated with a bond between indium and oxygen.

35. The method for manufacturing a semiconductor device, according to claim 30, wherein at least part of the oxide semiconductor film comprises oxygen at a concentration higher than a stoichiometric ratio in order to reduce an amount of oxygen vacancy which is associated with a bond between indium and oxygen.

36. The method for manufacturing a semiconductor device, according to claim 30, further comprising:

heating the oxide semiconductor film in order to reduce an amount of oxygen vacancy which is associated with a bond between indium and oxygen.

37. A method for manufacturing a semiconductor device, comprising:

forming an oxide semiconductor film comprising a channel formation region, the oxide semiconductor film comprising oxygen and metal elements, the metal elements including indium;

forming a metal oxide film over the oxide semiconductor film; and

performing an oxygen doping treatment on the metal oxide film in order to reduce an amount of oxygen vacancy which is associated with a bond between indium and oxygen,

wherein the metal oxide film comprises oxygen and same metal elements as the metal elements of the oxide semiconductor film.

38. The method for manufacturing a semiconductor device, according to claim 37, wherein the metal oxide film is insulating.

39. The method for manufacturing a semiconductor device, according to claim 37, further comprising:

forming a gate electrode over the oxide semiconductor film.

40. The method for manufacturing a semiconductor device, according to claim 37, wherein the metal oxide film comprises gallium and oxygen.

41. The method for manufacturing a semiconductor device, according to claim 37, wherein at least part of the metal oxide film comprises oxygen at a concentration higher than a stoichiometric ratio in order to reduce an amount of oxygen vacancy which is associated with a bond between indium and oxygen.

42. The method for manufacturing a semiconductor device, according to claim 37, wherein at least part of the oxide semiconductor film comprises oxygen at a concentration higher than a stoichiometric ratio in order to reduce an amount of oxygen vacancy which is associated with a bond between indium and oxygen.

43. The method for manufacturing a semiconductor device, according to claim 37, further comprising:

heating the metal oxide film in order to reduce an amount of oxygen vacancy which is associated with a bond between indium and oxygen.

44. A method for manufacturing a semiconductor device, comprising:

forming a metal oxide film;

forming an oxide semiconductor film comprising a channel formation region over the metal oxide film, the oxide semiconductor film comprising oxygen and metal elements, the metal elements including indium; and

performing an oxygen doping treatment on the metal oxide film in order to reduce an amount of oxygen vacancy which is associated with a bond between indium and oxygen,

wherein the metal oxide film comprises oxygen and at least one of the metal elements of the oxide semiconductor film.

45. The method for manufacturing a semiconductor device, according to claim 44, wherein the metal oxide film is insulating.

46. The method for manufacturing a semiconductor device, according to claim 44, further comprising:

forming a gate electrode over the oxide semiconductor film.

47. The method for manufacturing a semiconductor device, according to claim 44, wherein the metal oxide film comprises gallium and oxygen.

48. The method for manufacturing a semiconductor device, according to claim 44, wherein at least part of the metal oxide film comprises oxygen at a concentration higher than a stoichiometric ratio in order to reduce an amount of oxygen vacancy which is associated with a bond between indium and oxygen.

49. The method for manufacturing a semiconductor device, according to claim 44, wherein at least part of the oxide semiconductor film comprises oxygen at a concentration higher than a stoichiometric ratio in order to reduce an amount of oxygen vacancy which is associated with a bond between indium and oxygen.

50. The method for manufacturing a semiconductor device, according to claim 44, further comprising:

heating the metal oxide film in order to reduce an amount of oxygen vacancy which is associated with a bond between indium and oxygen.

51. A method for manufacturing a semiconductor device, comprising:

forming a metal oxide film;

forming an oxide semiconductor film comprising a channel formation region over the metal oxide film, the oxide semiconductor film comprising oxygen and metal elements, the metal elements including indium; and

performing an oxygen doping treatment on the oxide semiconductor film in order to reduce an amount of oxygen vacancy which is associated with a bond between indium and oxygen,

wherein the metal oxide film comprises oxygen and at least one of the metal elements of the oxide semiconductor film.

52. The method for manufacturing a semiconductor device, according to claim 51, wherein the metal oxide film is insulating.

53. The method for manufacturing a semiconductor device, according to claim 51, further comprising:

forming a gate electrode over the oxide semiconductor film.

54. The method for manufacturing a semiconductor device, according to claim 51, wherein the metal oxide film comprises gallium and oxygen.

55. The method for manufacturing a semiconductor device, according to claim 51, wherein at least part of the metal oxide film comprises oxygen at a concentration higher than a stoichiometric ratio in order to reduce an amount of oxygen vacancy which is associated with a bond between indium and oxygen.

56. The method for manufacturing a semiconductor device, according to claim 51, wherein at least part of the oxide semiconductor film comprises oxygen at a concentration higher than a stoichiometric ratio in order to reduce an amount of oxygen vacancy which is associated with a bond between indium and oxygen.

57. The method for manufacturing a semiconductor device, according to claim 51, further comprising:

heating the oxide semiconductor film in order to reduce an amount of oxygen vacancy which is associated with a bond between indium and oxygen.

58. A method for manufacturing a semiconductor device, comprising:

forming an oxide semiconductor film comprising a channel formation region, the oxide semiconductor film comprising oxygen and metal elements, the metal elements including indium;

forming a metal oxide film over the oxide semiconductor film; and

performing an oxygen doping treatment on the metal oxide film in order to reduce an amount of oxygen vacancy which is associated with a bond between indium and oxygen,

wherein the metal oxide film comprises oxygen and at least one of the metal elements of the oxide semiconductor film.

59. The method for manufacturing a semiconductor device, according to claim 58, wherein the metal oxide film is insulating.

60. The method for manufacturing a semiconductor device, according to claim 58, further comprising:

forming a gate electrode over the oxide semiconductor film.

61. The method for manufacturing a semiconductor device, according to claim 58, wherein the metal oxide film comprises gallium and oxygen.

62. The method for manufacturing a semiconductor device, according to claim 58, wherein at least part of the metal oxide film comprises oxygen at a concentration higher than a stoichiometric ratio in order to reduce an amount of oxygen vacancy which is associated with a bond between indium and oxygen.

63. The method for manufacturing a semiconductor device, according to claim 58, wherein at least part of the oxide semiconductor film comprises oxygen at a concentration higher than a stoichiometric ratio in order to reduce an amount of oxygen vacancy which is associated with a bond between indium and oxygen.

64. The method for manufacturing a semiconductor device, according to claim 58, further comprising:

heating the metal oxide film in order to reduce an amount of oxygen vacancy which is associated with a bond between indium and oxygen.

65. A method for determining whether an oxygen doping treatment is performed, comprising:

measuring a first concentration of a first region of an oxide semiconductor film, wherein an oxygen doping treatment is not performed on the first region;

measuring a second concentration of a second region of an oxide semiconductor film; and

determining whether an oxygen doping treatment is performed on the second region by comparing the first concentration and the second concentration,

wherein each of the first concentration and the second concentration is a concentration of one of ¹⁷O and ¹⁸O.

66. The method for determining whether an oxygen doping treatment is performed, according to claim 65, wherein each of the first concentration and the second concentration are measured by secondary ion mass spectroscopy.