Semiconductor device and method for manufacturing the same

• US 8,461,013 B2
• Filed: 05/10/2010
• Issued: 06/11/2013
• Est. Priority Date: 12/19/2003
• Status: Expired due to Fees

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Maekawa, Shinji, Fujii, Gen, Maruyama, Junya, Takayama, Toru, Fukumoto, Yumiko, Arai, Yasuyuki
• Primary Examiner(s): Tran, Thien F
• Application Number:
  US12/776,870
• Publication Number:
  US 20100221870A1
• Time in Patent Office: 1,128 Days
• Field of Search: 438/406, 438/455, 438/458
• US Class Current: 438/406
• CPC Class Codes: G06K 19/07749 the record carrier being capable of non-contact communication, e.g. constructional details of the antenna of a non-contact smart card
• CPC Class Codes: H01L 27/12 the substrate being other than a semiconductor body, e.g. an insulating body
• CPC Class Codes: H01L 27/1285 using control of the annealing or irradiation parameters, e.g. using different scanning direction or intensity for different transistors
• CPC Class Codes: H01L 27/1292 using liquid deposition, e.g. printing
• CPC Class Codes: H01L 27/13 combined with thin-film or thick-film passive components
• CPC Class Codes: H01L 29/66757 Lateral single gate single channel transistors with non-inverted structure, i.e. the channel layer is formed before the gate
• CPC Class Codes: H01L 29/66765 Lateral single gate single channel transistors with inverted structure, i.e. the channel layer is formed after the gate
• CPC Class Codes: H01L 29/78603 characterised by the insulating substrate or support H01L29/78657 takes precedence
• CPC Class Codes: H01L 29/78684 having a semiconductor body comprising semiconductor materials of Group IV not being silicon, or alloys including an element of the group IV, e.g. Ge, SiN alloys, SiC alloys H01L29/7869 takes precedence

Abstract

An IC card is more expensive than a magnetic card, and an electronic tag is also more expensive as a substitute for bar codes. Therefore, the present invention provides an extremely thin integrated circuit that can be mass-produced at low cost unlike a chip of a conventional silicon wafer, and a manufacturing method thereof. One feature of the present invention is that a thin integrated circuit is formed by a formation method that can form a pattern selectively, on a glass substrate, a quartz substrate, a stainless substrate, a substrate made of synthetic resin having flexibility, such as acryl, or the like except for a bulk substrate. Further, another feature of the present invention is that an ID chip in which a thin film integrated circuit and an antenna according to the present invention are mounted is formed.

Claims

1. A method for manufacturing a semiconductor device comprising:

forming an integrated circuit by a droplet discharging method or a printing method over a first substrate in at least one step;

forming an antenna over a second substrate having flexibility; and

attaching the integrated circuit between the first substrate and the second substrate so that the integrated circuit is electrically connected to the antenna.

2. The method for manufacturing a semiconductor device according to claim 1, wherein the antenna is formed by a sputtering method, a droplet discharging method, a printing method, a plating method, a photolithography method, or a vapor deposition method, using a metal mask.

3. The method for manufacturing a semiconductor device according to claim 1, wherein the antenna is formed by a sputtering method, a droplet discharging method, a printing method, a plating method, a photolithography method, or a vapor deposition method using a metal mask, and the antenna is pressed.

4. The method for manufacturing a semiconductor device according to claim 1, the method further comprising:

forming a metal film and an oxide film containing silicon over the metal film, between the first substrate and the integrated circuit;

forming a metal oxide film comprising a metal included in the metal film on a surface of the metal film; and

separating the first substrate at an interface between the oxide film and the metal film or an interface between the metal oxide film and the oxide film containing silicon.

5. A method for manufacturing a semiconductor device comprising:

forming an integrated circuit by a droplet discharging method or a printing method over a first substrate;

performing heat treatment to the first substrate with the integrated circuit;

separating the first substrate from the integrated circuit;

forming an antenna over a second substrate; and

attaching the integrated circuit to the second substrate so that the integrated circuit is electrically connected to the antenna.

6. The method for manufacturing a semiconductor device according to claim 5, wherein the antenna is formed by a sputtering method, a droplet discharging method, a printing method, a plating method, a photolithography method, or a vapor deposition method, using a metal mask.

7. The method for manufacturing a semiconductor device according to claim 5, wherein the antenna is formed by a sputtering method, a droplet discharging method, a printing method, a plating method, a photolithography method, or a vapor deposition method using a metal mask, and the antenna is pressed.

8. The method for manufacturing a semiconductor device according to claim 5, the method further comprising:

forming a metal film and an oxide film containing silicon over the metal film, between the first substrate and the integrated circuit;

forming a metal oxide film comprising a metal included in the metal film on a surface of the metal film; and

separating the first substrate at an interface between the oxide film and the metal film or an interface between the metal oxide film and the oxide film containing silicon.

9. A method for manufacturing a semiconductor device comprising:

forming an integrated circuit by a droplet discharging method or a printing method over a first substrate;

performing heat treatment to the first substrate with the integrated circuit;

severing a part of the first substrate;

separating the first substrate from the integrated circuit;

forming an antenna over a second substrate; and

attaching the integrated circuit to the second substrate so that the integrated circuit is electrically connected to the antenna.

10. The method for manufacturing a semiconductor device according to claim 9, wherein the antenna is formed by a sputtering method, a droplet discharging method, a printing method, a plating method, a photolithography method, or a vapor deposition method, using a metal mask.

11. The method for manufacturing a semiconductor device according to claim 9, wherein the antenna is formed by a sputtering method, a droplet discharging method, a printing method, a plating method, a photolithography method, or a vapor deposition method using a metal mask, and the antenna is pressed.

12. The method for manufacturing a semiconductor device according to claim 9, the method further comprising:

forming a metal film and an oxide film containing silicon over the metal film, between the first substrate and the integrated circuit;

forming a metal oxide film comprising a metal included in the metal film on a surface of the metal film; and

separating the first substrate at an interface between the oxide film and the metal film or an interface between the metal oxide film and the oxide film containing silicon.