Method for making semiconductor apparatus and semiconductor apparatus obtained by the method, method for making thin film transistor substrate and thin film transistor substrate obtained by the method, and method for making display apparatus and display apparatus obtained by the method
First Claim
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1. A semiconductor apparatus comprising:
- a substrate;
a gate electrode on said substrate;
a layered structure on said substrate, the layered structure including an insulating film made of a metal oxide, and a semiconductor thin film,wherein,said insulating film and said semiconductor thin film are both crystallized, anda portion of said insulating film superposed with said gate electrode has a crystallinity that is higher than that of other portions of said insulating film.
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Abstract
A semiconductor apparatus having a substrate and a laminate structure formed on the substrate, the laminate structure including an insulating film made of a metal oxide and a semiconductor thin film, both the insulating film and the semiconductor thin film being crystallized.
31 Citations
6 Claims
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1. A semiconductor apparatus comprising:
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a substrate; a gate electrode on said substrate; a layered structure on said substrate, the layered structure including an insulating film made of a metal oxide, and a semiconductor thin film, wherein, said insulating film and said semiconductor thin film are both crystallized, and a portion of said insulating film superposed with said gate electrode has a crystallinity that is higher than that of other portions of said insulating film. - View Dependent Claims (2, 3)
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4. A display apparatus comprising:
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a substrate; a thin film transistor and a pixel electrode connected thereto on said substrate, the thin film transistor including; a gate electrode, and a layered structure on said substrate, the layered structure including an insulating film made of a metal oxide, and a semiconductor thin film, wherein, said insulating film and said semiconductor thin film are crystallized, and a portion of said insulating film superposed with said gate electrode has a crystallinity that is higher than that of other portions of said insulating film. - View Dependent Claims (5, 6)
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Specification