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Method for making semiconductor apparatus and semiconductor apparatus obtained by the method, method for making thin film transistor substrate and thin film transistor substrate obtained by the method, and method for making display apparatus and display apparatus obtained by the method

  • US 8,461,595 B2
  • Filed: 04/24/2012
  • Issued: 06/11/2013
  • Est. Priority Date: 05/18/2007
  • Status: Expired due to Fees
First Claim
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1. A semiconductor apparatus comprising:

  • a substrate;

    a gate electrode on said substrate;

    a layered structure on said substrate, the layered structure including an insulating film made of a metal oxide, and a semiconductor thin film,wherein,said insulating film and said semiconductor thin film are both crystallized, anda portion of said insulating film superposed with said gate electrode has a crystallinity that is higher than that of other portions of said insulating film.

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