Semiconductor device including semiconductor film with outer end having tapered shape

• US 8,461,596 B2
• Filed: 11/03/2011
• Issued: 06/11/2013
• Est. Priority Date: 03/06/2001
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Suzawa, Hideomi, Kusuyama, Yoshihiro, Yamazaki, Shunpei
• Primary Examiner(s): Chambliss, Alonzo
• Application Number:
  US13/288,300
• Publication Number:
  US 20120043544A1
• Time in Patent Office: 586 Days
• Field of Search: None
• US Class Current: 257/71
• CPC Class Codes: G02F 1/1368 in which the switching element is a three-electrode device G02F1/136277 takes precedence
• CPC Class Codes: H01L 27/124 with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits wiring structures per se H01L23/52
• CPC Class Codes: H01L 27/1244 for preventing breakage, peeling or short circuiting
• CPC Class Codes: H01L 27/1288 employing particular masking sequences or specially adapted masks, e.g. half-tone mask
• CPC Class Codes: H01L 29/06 characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
• CPC Class Codes: H01L 29/66765 Lateral single gate single channel transistors with inverted structure, i.e. the channel layer is formed after the gate
• CPC Class Codes: H01L 29/78621 with LDD structure or an extension or an offset region or characterised by the doping profile
• CPC Class Codes: H01L 29/78669 with inverted-type structure, e.g. with bottom gate

Abstract

The present invention has an object to provide an active-matrix liquid crystal display device that realizes the improvement in productivity as well as in yield. In the present invention, a laminate film comprising the conductive film comprising metallic material and the second amorphous semiconductor film containing an impurity element of one conductivity type and the amorphous semiconductor film is selectively etched with the same etching gas to form a side edge of the first amorphous semiconductor film 1001 into a taper shape. Thereby, a coverage problem of a pixel electrode 1003 can be solved and an inverse stagger type TFT can be completed with three photomask.

Claims

1. A semiconductor device comprising:

a first conductive film over an insulating surface;

a first insulating film over the first conductive film;

a semiconductor film over the first conductive film with the first insulating film interposed between the first conductive film and the semiconductor film, wherein the semiconductor film comprises a channel formation region, a first impurity region, and a second impurity region;

a second insulating film over the semiconductor film;

a second conductive film on the semiconductor film; and

a third conductive film on the semiconductor film with the second insulating film interposed between the second conductive film and the third conductive film,

wherein at least an outer end of the semiconductor film has a tapered shape.

2. The semiconductor device according to claim 1, wherein the taper angle of the semiconductor film is in the range of 5°

to 45°

.

3. The semiconductor device according to claim 1, wherein the second conductive film is in direct contact with the first impurity region of the semiconductor film, and

wherein the third conductive film is in direct contact with the second impurity region of the semiconductor film.

4. The semiconductor device according to claim 1, wherein a region of the semiconductor film not overlapping with the second insulating film is an impurity region.

5. The semiconductor device according to claim 1, wherein the semiconductor film is one selected from the group consisting of an amorphous semiconductor film, a microcrystalline semiconductor film, and a compound semiconductor film with an amorphous structure.

6. The semiconductor device according to claim 1, wherein the first conductive film contains a metal material selected from the group consisting of titanium, tantalum, tungsten, molybdenum, chromium, neodymium, aluminum copper, silver, gold, and platinum.

7. A semiconductor device comprising:

a first conductive film and a second conductive film over an insulating surface;

a first insulating film formed over the first conductive film and the second conductive film;

a semiconductor film over the first conductive film and the second conductive film with the first insulating film interposed between the first conductive film and the semiconductor film, wherein the semiconductor film comprises a channel formation region, a first impurity region, and a second impurity region;

a second insulating film over the semiconductor film;

a third conductive film on the semiconductor film; and

a fourth conductive film on the semiconductor film with the second insulating film interposed between the third conductive film and the fourth conductive film, and over the second conductive film with the first insulating film interposed between the second conductive film and the fourth conductive film.

8. The semiconductor device according to claim 7, wherein the third conductive film is in direct contact with the semiconductor film, and

wherein the fourth conductive film is in direct contact with the semiconductor film.

9. The semiconductor device according to claim 7, wherein a region of the semiconductor film not overlapping with the second insulating film is an impurity region.

10. The semiconductor device according to claim 7, wherein the semiconductor film is one selected from the group consisting of an amorphous semiconductor film, a microcrystalline semiconductor film, and a compound semiconductor film with an amorphous structure.

11. The semiconductor device according to claim 7, wherein the first conductive film and the second conductive film contain a metal material selected from the group consisting of titanium, tantalum, tungsten, molybdenum, chromium, neodymium, aluminum, copper, silver, gold, and platinum.

12. A semiconductor device comprising:

a first conductive film and a second conductive film over an insulating surface;

a first insulating film formed over the first conductive film and the second conductive film;

a semiconductor film over the first conductive film and the second conductive film with the first insulating film interposed between the first conductive film and the semiconductor film, wherein the semiconductor film comprises a channel formation region, a first impurity region, and a second impurity region;

a second insulating film over the semiconductor film;

a third transparent conductive film on the semiconductor film; and

a fourth transparent conductive film on the semiconductor film with the second insulating film interposed between the third transparent conductive film and the fourth transparent conductive film, and over the second conductive film with the first insulating film interposed between the second conductive film and the fourth transparent conductive film,

wherein at least an outer end of the semiconductor film has a tapered shape.

13. The semiconductor device according to claim 12, wherein the taper angle of the semiconductor film is in the range of 5°

to 45°

.

14. The semiconductor device according to claim 12, wherein the third transparent conductive film is in direct contact with the semiconductor film, and

wherein the fourth transparent conductive film is in direct contact with the semiconductor film.

15. The semiconductor device according to claim 12, wherein a region of the semiconductor film not overlapping with the second insulating film is an impurity region.

16. The semiconductor device according to claim 12, wherein the semiconductor film is one selected from the group consisting of an amorphous semiconductor film, a microcrystalline semiconductor film, and a compound semiconductor film with an amorphous structure.

17. The semiconductor device according to claim 12, wherein the first conductive film and the second conductive film contain a metal material selected from the group consisting of titanium, tantalum, tungsten, molybdenum, chromium, neodymium, aluminum, copper, silver, gold, and platinum.

18. The semiconductor device according to claim 12, wherein the third transparent conductive film and the fourth transparent conductive film contain indium oxide or an alloy of indium oxide and tin oxide.

19. A semiconductor device comprising:

a first conductive film and a second conductive film over an insulating surface;

a first insulating film formed over the first conductive film and the second conductive film;

a first semiconductor film over the first conductive film and the second conductive film with the first insulating film interposed between the first and second conductive films and the first semiconductor film, wherein the first semiconductor film comprises a first channel formation region over the first conductive film, and a second channel formation region over the second conductive film;

a second semiconductor film, a third semiconductor film, and a fourth semiconductor film, which contain an impurity element of one conductivity type, over the first semiconductor film;

a fourth conductive film on the second semiconductor film;

a fifth conductive film on the fourth semiconductor film; and

a pixel electrode on the fifth conductive film,

wherein the first channel formation region is provided between the second semiconductor film and the third semiconductor film,

wherein the second channel formation region is provided between the third semiconductor film and the fourth semiconductor film,

wherein at least outer ends of the first semiconductor film are tapered,

wherein at least an outer end of the second semiconductor film opposite to the third semiconductor film is tapered, and

wherein at least an outer end of the fourth semiconductor film opposite to the third semiconductor film is tapered.

20. The semiconductor device according to claim 19,

wherein the first semiconductor film has a first depression between the second semiconductor film and the third semiconductor film, and a second depression between the third semiconductor film and the fourth semiconductor film.