Semiconductor light emitting device having a reflective material with a side slant surface and method of manufacturing

• US 8,461,610 B2
• Filed: 06/16/2011
• Issued: 06/11/2013
• Est. Priority Date: 06/16/2010
• Status: Active Grant

• Current Assignee: Stanley Electric Company Limited
• Original Assignee: Stanley Electric Company Limited
• Inventors: Ito, Kosaburo, Seko, Toshihiro, Ueno, Kazuhiko, Owada, Soji
• Primary Examiner(s): Pizarro, Marcos D.
• Assistant Examiner(s): LOPEZ, CESAR OSWALDO
• Application Number:
  US13/162,151
• Publication Number:
  US 20110309388A1
• Time in Patent Office: 726 Days
• Field of Search: 257/E33.072, 362/243, 313/501
• US Class Current: 257/98
• CPC Class Codes: H01L 2224/73253 Bump and layer connectors
• CPC Class Codes: H01L 2933/0041 relating to wavelength conversion elements
• CPC Class Codes: H01L 33/46 Reflective coating, e.g. dielectric Bragg reflector
• CPC Class Codes: H01L 33/502 Wavelength conversion materials
• CPC Class Codes: H01L 33/507 the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body
• CPC Class Codes: H01L 33/60 Reflective elements

Abstract

A semiconductor light-emitting device and a method for manufacturing the same can include a wavelength converting layer located over at least one semiconductor light-emitting chip in order to emit various colored lights including white light. The semiconductor light-emitting device can include a base board, a frame located on the base board, the chip mounted on the base board, a transparent material layer located between the wavelength converting layer and a side surface of the chip so as to extend toward the wavelength converting layer, and a reflective material layer disposed at least between the frame and both side surfaces of the wavelength converting layer and the transparent material layer. The semiconductor light-emitting device can be configured to improve light-emitting efficiency of the chip by using the reflective material layer as a reflector, and therefore can emit a wavelength-converted light having a high light-emitting efficiency from a small light-emitting surface.

Claims

1. A semiconductor light-emitting device comprising:

a base board having a mounting surface and a conductor pattern formed on the mounting surface;

a semiconductor light-emitting chip having a bottom surface, a top surface and a side surface, and including chip electrodes adjacent the bottom surface, each of the chip electrodes electrically connected to a respective portion of the conductor pattern of the base board via solder bumps;

a wavelength converting layer having a bottom surface and a side surface, the wavelength converting layer including at least one phosphor, and located over the top surface of the semiconductor light-emitting chip so that the bottom surface of the wavelength converting layer covers the top surface of the semiconductor light-emitting chip;

a transparent material layer having a side surface disposed between the bottom surface of the wavelength converting layer and the side surface of the semiconductor light-emitting chip so that the side surface of the transparent material layer extends from the side surface of the semiconductor light-emitting chip toward the bottom surface of the wavelength converting layer;

a frame located adjacent the mounting surface of the base board so as to surround the semiconductor light-emitting chip and the transparent material layer; and

a reflective material layer having a side slant surface disposed at least between the frame and both the side surface of the wavelength converting layer and the side surface of the transparent material layer and between the bottom surface of the semiconductor light-emitting chip and the mounting surface of the base board while surrounding the solder bumps, wherein the side slant surface contacts with the side surface of the transparent material layer and extends from the side surface of the semiconductor light-emitting chip toward the bottom surface of the wavelength converting layer.

2. The semiconductor light-emitting device according to claim 1, wherein the semiconductor light-emitting chip is a blue light-emitting chip and the at least one phosphor of the wavelength converting layer is selected from the group consisting of a yellow phosphor, and two phosphors including a red phosphor layer and a green phosphor layer.

3. The semiconductor light-emitting device according to claim 1, wherein the semiconductor light-emitting chip is an ultraviolet light-emitting chip and the at least one phosphor of the wavelength converting layer includes at least one of a red phosphor, a green phosphor, and a blue phosphor.

4. The semiconductor light-emitting device according to claim 1, further comprising a plurality of semiconductor light-emitting chips.

5. A method for manufacturing the semiconductor light-emitting device according to claim 1, comprising:

providing the base board;

connecting each of the chip electrodes of the semiconductor light-emitting chip to a respective portion of the conductor pattern of the base board via the solder bumps;

disposing an uncured transparent material between the bottom surface of the wavelength converting layer and the side surface of the semiconductor light-emitting chip so as to extend from the side surface of the semiconductor light-emitting chip toward the bottom surface of the wavelength converting layer; and

disposing an uncured reflective material at least between the frame and both the side surface of the wavelength converting layer and the side surface of the transparent material layer and between the bottom surface of the semiconductor light-emitting chip and the mounting surface of the base board.

6. The method for manufacturing the semiconductor light-emitting device according to claim 5, wherein the semiconductor light-emitting chip is a blue light-emitting chip and the at least one phosphor of the wavelength converting layer is selected from the group consisting of a yellow phosphor, and two phosphors including a red phosphor layer and a green phosphor layer.

7. The semiconductor light-emitting device according to claim 1, wherein the side slant surface of the reflective material layer is formed in at least one of a substantially linear shape and a convex shape having a curvature of 5 or less extending in a direction toward the semiconductor light-emitting chip between the side surface of the semiconductor light-emitting chip and the bottom surface of the wavelength converting layer.

8. The semiconductor light-emitting device according to claim 7, wherein the semiconductor light-emitting chip is a blue light-emitting chip and the at least one phosphor of the wavelength converting layer is selected from the group consisting of a yellow phosphor, and two phosphors including a red phosphor layer and a green phosphor layer.

9. The semiconductor light-emitting device according to claim 7, wherein the semiconductor light-emitting chip is an ultraviolet light-emitting chip and the at least one phosphor of the wavelength converting layer includes at least one of a red phosphor, a green phosphor, and a blue phosphor.

10. A method for manufacturing the semiconductor light-emitting device according to claim 7, comprising:

providing the base board;

connecting each of the chip electrodes of the semiconductor light-emitting chip to a respective portion of the conductor pattern of the base board via the solder bumps;

disposing an uncured transparent material between the bottom surface of the wavelength converting layer and the side surface of the semiconductor light-emitting chip so as to extend from the side surface of the semiconductor light-emitting chip toward the bottom surface of the wavelength converting layer; and

disposing an uncured reflective material at least between the frame and both the side surface of the wavelength converting layer and the side surface of the transparent material layer and between the bottom surface of the semiconductor light-emitting chip and the mounting surface of the base board.

15. A method for manufacturing the semiconductor light-emitting device according to 7, comprising:

providing the base board;

connecting each of the chip electrodes of the semiconductor light-emitting chips to a respective portion of the conductor pattern of the base board via the solder bumps;

disposing an uncured transparent material between the bottom surface of the wavelength converting layer and the outer side surface of the at least one of the semiconductor light-emitting chips so as to extend from the outer side surface of the at least one of the semiconductor light-emitting chips toward the bottom surface of the wavelength converting layer; and

disposing an uncured reflective material at least between the frame and both the side surface of the wavelength converting layer and the side surface of the transparent material layer and between the bottom surface of at least one of the semiconductor light-emitting chips and the mounting surface of the base board.

16. The method for manufacturing a semiconductor light-emitting device according to claim 15, wherein the plurality of semiconductor light-emitting chips includes a blue light-emitting chip and the at least one phosphor of the wavelength converting layer is selected from the group consisting of a yellow phosphor, and two phosphors including a red phosphor layer and a green phosphor layer.

11. A semiconductor light-emitting device comprising:

a base board having a mounting surface and a conductor pattern formed on the mounting surface;

a plurality of semiconductor light-emitting chips each having a bottom surface, a top surface and an outer side surface, and each including chip electrodes adjacent the bottom surface, each of the chip electrodes electrically connected to a respective portion of the conductor pattern of the base board via solder bumps so that the plurality of semiconductor light-emitting chips is located adjacent each other;

a wavelength converting layer having a bottom surface and a side surface, the wavelength converting layer including at least one phosphor, and located over the top surface of each of the semiconductor light-emitting chips so that the bottom surface of the wavelength converting layer covers the top surface of each of the semiconductor light-emitting chips;

a transparent material layer having a side surface disposed between the bottom surface of the wavelength converting layer and the outer side surface of at least one of the semiconductor light-emitting chips so that the side surface of the transparent material layer extends from the outer side surface of the at least one of the semiconductor light-emitting chips toward the bottom surface of the wavelength converting layer;

a frame located adjacent the mounting surface of the base board so as to surround the transparent material layer and the semiconductor light-emitting chips while facing the outer side surface of the at least one of the semiconductor light-emitting chips; and

a reflective material layer having a side slant surface disposed at least between the frame and both the side surface of the wavelength converting layer and the side surface of the transparent material layer and between the bottom surface of at least one of the semiconductor light-emitting chips and the mounting surface of the base board while surrounding the solder bumps, wherein the side slant surface contacts with the side surface of the transparent material layer and extends from the outer side surface of the at least one of the semiconductor light-emitting chips toward the bottom surface of the wavelength converting layer.

12. The semiconductor light-emitting device according to claim 11, wherein a boundary between the transparent material layer and the reflective material layer is formed in a convex shape extending in a direction toward the wavelength converting layer in spaces between adjacent semiconductor light-emitting chips.

13. The semiconductor light-emitting device according to claim 11, wherein the plurality of semiconductor light-emitting chips includes a blue light-emitting chip and the at least one phosphor of the wavelength converting layer is selected from the group consisting of a yellow phosphor, and two phosphors including a red phosphor layer and a green phosphor layer.

14. The semiconductor light-emitting device according to claim 11, wherein the plurality of semiconductor light-emitting chips includes an ultraviolet light-emitting chip and the at least one phosphor of the wavelength converting layer includes at least one of a red phosphor, a green phosphor, and a blue phosphor.

17. The semiconductor light-emitting device according to claim 11, wherein the side slant surface of the reflective material layer is formed in at least one of a substantially linear shape and a convex shape having a curvature of 5 or less and extending in a direction toward the semiconductor light-emitting chips, and is located between the outer side surface of the at least one of the semiconductor light-emitting chips and the bottom surface of the wavelength converting layer.

18. The semiconductor light-emitting device according to claim 17, wherein a boundary between the transparent material layer and the reflective material layer is formed in a convex shape having a curvature of 5 or less and extending in a direction toward the wavelength converting layer in spaces between adjacent semiconductor light-emitting chips.

19. The semiconductor light-emitting device according to claim 17, wherein the plurality of semiconductor light-emitting chips includes a blue light-emitting chip and the at least one phosphor of the wavelength converting layer is selected from the group consisting of a yellow phosphor, and two phosphors including a red phosphor layer and a green phosphor layer.

20. The semiconductor light-emitting device according to claim 17, wherein the plurality of semiconductor light-emitting chips includes an ultraviolet light-emitting chip and the at least one phosphor of the wavelength converting layer includes at least one of a red phosphor, a green phosphor, and a blue phosphor.

21. A method for manufacturing the semiconductor light-emitting device according to 17, comprising:

providing the base board;

connecting each of the chip electrodes of the semiconductor light-emitting chips to a respective portion of the conductor pattern of the base board via the solder bumps;

disposing an uncured transparent material between the bottom surface of the wavelength converting layer and the outer side surface of the at least one of the semiconductor light-emitting chips so as to extend from the outer side surface of the at least one of the semiconductor light-emitting chips toward the bottom surface of the wavelength converting layer; and

disposing an uncured reflective material at least between the frame and both the side surface of the wavelength converting layer and the side surface of the transparent material layer and between the bottom surface of at least one of the semiconductor light-emitting chips and the mounting surface of the base board.