Semiconductor component with a drift region and a drift control region

• US 8,461,648 B2
• Filed: 07/27/2006
• Issued: 06/11/2013
• Est. Priority Date: 07/27/2005
• Status: Active Grant

• Current Assignee: Infineon Technologies Austria Ag (Infineon Technologies AG)
• Original Assignee: Infineon Technologies Austria Ag (Infineon Technologies AG)
• Inventors: Pfirsch, Frank, Mauder, Anton, Willmeroth, Armin, Schulze, Hans-Joachim, Sedlmaier, Stefan, Zundel, Markus, Hirler, Franz, Mittal, Arunjai
• Primary Examiner(s): Thomas, Tom
• Assistant Examiner(s): Roland, Christopher M
• Application Number:
  US11/996,906
• Publication Number:
  US 20090218621A1
• Time in Patent Office: 2,511 Days
• Field of Search: 257/328, 257/341, 257/E29.012, 257/E29.257, 257/E21.418
• US Class Current: 257/341
• CPC Class Codes: H01L 29/0634 Multiple reduced surface field (multi-RESURF) structures, e.g. double RESURF, charge compensation, cool, superjunction (SJ), 3D-RESURF, composite buffer (CB) structures
• CPC Class Codes: H01L 29/0653 adjoining the input or output region of a field-effect device, e.g. the source or drain region
• CPC Class Codes: H01L 29/0696 of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
• CPC Class Codes: H01L 29/0878 Impurity concentration or distribution
• CPC Class Codes: H01L 29/1095 Body region, i.e. base region, of DMOS transistors or IGBTs cell layout H01L29/0696
• CPC Class Codes: H01L 29/407 Recessed field plates, e.g. trench field plates, buried field plates
• CPC Class Codes: H01L 29/41766 with at least part of the source or drain electrode having contact below the semiconductor surface, e.g. the source or drain electrode formed at least partially in a groove or with inclusions of conductor inside the semiconductor H01L29/41733 - H01L29/41758 take precedence
• CPC Class Codes: H01L 29/4916 the conductor material next to the insulator being a silicon layer, e.g. polysilicon doped with boron, phosphorus or nitrogen H01L29/4908, H01L29/4983 take precedence
• CPC Class Codes: H01L 29/66734 with a step of recessing the gate electrode, e.g. to form a trench gate electrode
• CPC Class Codes: H01L 29/7802 Vertical DMOS transistors, i.e. VDMOS transistors
• CPC Class Codes: H01L 29/7803 structurally associated with at least one other device assemblies H01L25/00; integrated circuits H01L27/00
• CPC Class Codes: H01L 29/7804 the other device being a pn-junction diode
• CPC Class Codes: H01L 29/7806 the other device being a Schottky barrier diode
• CPC Class Codes: H01L 29/7811 with an edge termination structure guard regions per se H01L29/0619; field plates per se H01L29/402
• CPC Class Codes: H01L 29/7813 with trench gate electrode, e.g. UMOS transistors trench gate electrodes per se H01L29/4236
• CPC Class Codes: H01L 29/872 Schottky diodes

Abstract

A semiconductor component with a drift region and a drift control region. One embodiment includes a semiconductor body having a drift region of a first conduction type in the semiconductor body. A drift control region composed of a semiconductor material, which is arranged, at least in sections, is adjacent to the drift region in the semiconductor body. An accumulation dielectric is arranged between the drift region and the drift control region.

Claims

1. A semiconductor component having a semiconductor body comprising:

a drift region of a semiconductor material in the semiconductor body;

a drift control region composed of a semiconductor material, arranged, at least in sections, adjacent to the drift region in the semiconductor body, the drift control region being one of a first conduction type, a second conduction type complementary to the first conduction type, and intrinsic;

an accumulation dielectric, arranged between the drift region and the drift control region;

a body region;

a drain region arranged at a distance from the body region, the drain region of the first conduction type;

a source region of the first conduction type, the source region separated from the drift region by the body region;

a gate electrode insulated from the semiconductor body by a gate dielectric, the gate electrode extending adjacent to the body region from the source region as far as the drift region;

a first rectifier element coupling the drift control region to the source region;

a doped connection region of the second conduction type, the doped connection region coupling the drift control region to the source region, and the doped connection region having a connection electrode;

a further connection region of the first conduction type, the further connection region adjacent to the drift control region and doped more highly than the drift control region; and

a second rectifier element,

wherein the drift region is arranged between the body region and the drain region,

wherein the first rectifier element is coupled between the connection electrode and the source region, and

wherein the drift control region is coupled to the drain region via the further connection region and the second rectifier element.

2. The semiconductor component of claim 1, wherein the drift control region has at least one semiconductor section doped in such a way that it can be fully depleted in a direction perpendicular to the accumulation dielectric.

3. The semiconductor component of claim 1, comprising:

a plurality of component structures of identical type arranged in the semiconductor body, each with a drift region and drift control region.

4. The semiconductor component of claim 1, wherein the drift control region is of a same conduction type as the drift region.

5. The semiconductor component of claim 1, wherein the drift control region is of a conduction type complementary to a conduction type of the drift region.

6. The semiconductor component of claim 1, wherein the drift region is intrinsic.

7. The semiconductor component of claim 1, wherein the body region is arranged at a distance from the drain region in a vertical direction of the semiconductor body.

8. The semiconductor component of claim 1, wherein the body region is arranged at a distance from the drain region in a lateral direction of the semiconductor body.

9. The semiconductor component of claim 1, comprising wherein the drift control region and the drift region have the same net dopant concentration.

10. The semiconductor component of claim 1, comprising wherein the drift region and the drift control region have an identical profile of the dopant concentration in a direction parallel to the accumulation dielectric.

11. The semiconductor component of claim 1, wherein the second rectifier element is a diode.

12. The semiconductor component of claim 11, wherein the diode is formed by a pn junction between the further connection region and a connection region of the second conduction type.

13. The semiconductor component of claim 1, wherein the first rectifier element is a diode.

14. The semiconductor component of claim 1, comprising a capacitive component connected between the drift control region and the source region.

15. The semiconductor component of claim 14, wherein the capacitive component is integrated in the semiconductor body.

16. The semiconductor component of claim 14, wherein the body region and the source region are connected to one another by a source electrode and a semiconductor region that is of a same conduction type as the body region and is doped more highly than the body region, and in which the capacitive component is connected to the source electrode.

17. The semiconductor component of claim 1, comprising wherein the drift control region is coupled to the drift region in sections via a tunnel dielectric.

18. The semiconductor component of claim 1, wherein the body region forms together with the drift region a component junction proceeding from which a space charge region propagates in the drift region when a reverse voltage is applied between the drift region and the body region.

19. The semiconductor component of claim 1, comprising a MOSFET, wherein the drain region is of a same conduction type as the drift region.

20. The semiconductor component of claim 1, comprising an IGBT, wherein the drain region is doped complementarily to the drift region.

21. The semiconductor component of claim 1, wherein the gate electrode is arranged above a front side of the semiconductor body.

22. The semiconductor component of claim 1, wherein the gate electrode is arranged in a trench of the semiconductor body.

23. The semiconductor component of claim 22, wherein the gate electrode is arranged at a distance from the drift control region in a direction transversely with respect to a current flow direction of the component.

24. The semiconductor component of claim 1, wherein the gate electrode extends from the source region as far as the drift region in a first lateral direction of the semiconductor body.

25. The semiconductor component of claim 24, wherein the gate electrode is arranged adjacent to the drift control region in the first lateral direction.

26. The semiconductor component of claim 1, wherein the gate electrode extends from the source region as far as the drift region in a vertical direction of the semiconductor body.

27. The semiconductor component of claim 1, wherein the semiconductor body has a second lateral direction y running perpendicular to a first lateral direction x, and the drift control region is arranged adjacent to the drift region at least in sections in the second lateral direction y in a manner separated by the accumulation dielectric.

28. The semiconductor component of claim 27, comprising:

a plurality of drift regions arranged at a distance from one another in the second lateral direction y; and

a plurality of drift control regions arranged at a distance from one another in the second lateral direction.

29. The semiconductor component of claim 1, comprising wherein the semiconductor body has a vertical direction v, and the drift control region is arranged adjacent to the drift region at least in sections in the vertical direction v.

30. The semiconductor component of claim 1, wherein the semiconductor body has a semiconductor substrate and a semiconductor layer arranged on the semiconductor substrate, the drift region and the drift control region being arranged in the semiconductor layer.

31. The semiconductor component of claim 30, wherein the drift region adjoins the semiconductor substrate, and an insulation layer is arranged between the drift control region and the semiconductor substrate.

32. The semiconductor component of claim 30, wherein an insulation layer is arranged between the semiconductor substrate and the drift region and the drift control region.

33. A power transistor having a semiconductor body comprising:

a source region and a drain region of a first conduction type;

a drift region, which is adjacent to the drain region;

a body region of a second conduction type, arranged between the source region and the drift region;

a gate electrode and a gate dielectric arranged between the gate electrode and the body region;

a drift control region composed of a semiconductor material, arranged, at least in sections, adjacent to the drift region in the semiconductor body and coupled to the source region and the drain region;

an accumulation dielectric, arranged between the drift region and the drift control region;

a first rectifier element, via which the drift control region is coupled to the source region;

a doped connection region of the second conduction type, via which the drift control region is coupled to the source region, the doped connection region having a connection electrode;

a further connection region of the first conduction type, which is adjacent to the drift control region and doped more highly than the drift control region; and

a second rectifier element,

wherein the first rectifier element is connected between the connection electrode and the source region, and

wherein the drift control region is coupled to the drain region via the further connection region and the second rectifier element.

34. The power transistor of claim 33, wherein the drift region is doped complementarily to the body region.