Device structures for in-plane and out-of-plane sensing micro-electro-mechanical systems (MEMS)
First Claim
1. A device structure, comprising:
- a substrate,a first insulating layer on the substrate;
a conductive layer having an isolated conductive region separated from a remaining portion of the conductive layer by an opening in the conductive layer that surrounds the isolated conductive region;
a second insulating layer over the isolated conductive region having an opening over the isolated conductive region;
a movable conductive finger over the opening in the second insulating layer that forms a first capacitor with the isolated conductive region that varies in capacitance based on movement of the movable conductive finger;
conductive polysilicon running directly from a location on the isolated conductive region to a bonding feature above a top surface of the device structure, wherein the conductive polysilicon is orthogonal to a top surface of the isolated conductive region, wherein the bonding feature in contact with a cap wafer in which the cap wafer has an electrode over the movable finger to form a capacitance with the movable finger that varies inversely with variations in the capacitance of the first capacitor due to movement of the movable finger.
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Accused Products
Abstract
A device structure is made using a first conductive layer over a first wafer. An isolated conductive region is formed in the first conductive layer surrounded by a first opening in the conductive layer. A second wafer has a first insulating layer and a conductive substrate, wherein the conductive substrate has a first major surface adjacent to the first insulating layer. The insulating layer is attached to the isolated conductive region. The conductive substrate is thinned to form a second conductive layer. A second opening is formed through the second conductive layer and the first insulating layer to the isolated conductive region. The second opening is filled with a conductive plug wherein the conductive plug contacts the isolated conductive region. The second conductive region is etched to form a movable finger over the isolated conductive region. A portion of the insulating layer under the movable finger is removed.
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Citations
16 Claims
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1. A device structure, comprising:
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a substrate, a first insulating layer on the substrate; a conductive layer having an isolated conductive region separated from a remaining portion of the conductive layer by an opening in the conductive layer that surrounds the isolated conductive region; a second insulating layer over the isolated conductive region having an opening over the isolated conductive region; a movable conductive finger over the opening in the second insulating layer that forms a first capacitor with the isolated conductive region that varies in capacitance based on movement of the movable conductive finger; conductive polysilicon running directly from a location on the isolated conductive region to a bonding feature above a top surface of the device structure, wherein the conductive polysilicon is orthogonal to a top surface of the isolated conductive region, wherein the bonding feature in contact with a cap wafer in which the cap wafer has an electrode over the movable finger to form a capacitance with the movable finger that varies inversely with variations in the capacitance of the first capacitor due to movement of the movable finger. - View Dependent Claims (2, 3, 4, 5)
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6. A semiconductor structure, comprising:
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a first conductive layer formed over a first wafer; an isolated conductive region formed in the first conductive layer surrounded by a first opening in the first conductive layer; a second wafer comprising a first insulating layer and a conductive substrate, wherein the conductive substrate has a first major surface adjacent to the first insulating layer; the first insulating layer attached to the isolated conductive region; a thinned area of the conductive substrate that forms a second conductive layer; a second opening formed through the second conductive layer and the first insulating layer to the isolated conductive region; the second opening filled with a conductive plug wherein the conductive plug contacts the isolated conductive region; the second conductive region configured to form a movable portion of the semiconductor structure over the isolated conductive region; and a portion of the first insulating layer is removed under the movable portion of the semiconductor structure. - View Dependent Claims (7, 8, 9, 10, 11, 12, 13, 14, 15)
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16. A semiconductor device, comprising:
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a first insulating layer formed over a semiconductor substrate; a conductive polysilicon layer formed over the first insulating layer; an opening in the conductive polysilicon layer surrounding a first portion of the conductive polysilicon layer; a conductive silicon layer formed over the conductive polysilicon layer, wherein the conductive silicon layer is separated from the conductive polysilicon layer by a second insulating layer; an opening extending orthogonally from a top surface of the first portion of the conductive polysilicon layer through the conductive silicon layer and the second insulating layer; the opening in the silicon layer and the second insulating layer are filled with conductive polysilicon; the conductive silicon layer is configured with a plurality of movable fingers over the first portion of the conductive polysilicon layer; and the second insulating layer is removed under the plurality of movable fingers.
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Specification