Locos nitride capping of deep trench polysilicon fill

• US 8,461,661 B2
• Filed: 04/06/2009
• Issued: 06/11/2013
• Est. Priority Date: 04/06/2009
• Status: Active Grant

• Current Assignee: Polar Semiconductor, LLC (Sanken Electric Co., Ltd.)
• Original Assignee: Polar Semiconductor, Inc. (Sanken Electric Company Limited)
• Inventors: Hoilien, Noel
• Primary Examiner(s): Pert, Evan
• Assistant Examiner(s): MUNOZ, ANDRES F
• Application Number:
  US12/418,819
• Publication Number:
  US 20100252905A1
• Time in Patent Office: 1,527 Days
• Field of Search: None
• US Class Current: 257/520
• CPC Class Codes: H01L 21/76235 trench shape altered by a local oxidation of silicon process step, e.g. trench corner rounding by LOCOS
• CPC Class Codes: H01L 21/763 Polycrystalline semiconductor regions H01L21/76264 takes precedence

Abstract

A polysilicon-filled isolation trench in a substrate is effective to isolate adjacent semiconductor devices from one another. A silicon nitride cap is provided to protect the polysilicon in the isolation trench from subsequent field oxidation. The cap has lateral boundaries that extend between the side boundaries of the polysilicon and the sidewalls of the trench. Subsequent field oxide regions formed adjacent to the trench establish a gap dimension from the substrate to a top surface of the field oxide regions adjacent to the polysilicon side boundaries that is no less than half of the field oxide thickness.

Claims

1. A protection structure that protects an isolation trench, the isolation trench being formed in a substrate, the isolation trench having opposite first and second side walls and having polysilicon therein with opposite first and second outermost side boundaries adjacent the first and second side walls, respectively, such that the first outermost side boundary is nearer to the first side wall than the second side wall, and the second outermost side boundary is nearer to the second side wall than the first side wall, the protection structure comprising:

an oxide layer on the polysilicon and the substrate; and

a silicon nitride cap on the oxide layer over the polysilicon, the silicon nitride cap extending from a first outermost lateral boundary situated laterally between the first outermost side boundary of the polysilicon and the first side wall of the isolation trench, and the silicon nitride cap extending to a second outermost lateral boundary situated laterally between the second outermost side boundary of the polysilicon and the second side wall of the isolation trench.

2. The protection structure of claim 1, wherein the substrate is composed of silicon.

3. The protection structure of claim 1, wherein the isolation trench has a depth of at least 15 μ

m.

4. The protection structure of claim 1, wherein the isolation trench is lined with oxide material.

5. The protection structure of claim 4, further comprising:

first and second field oxide regions adjacent to the isolation trench, the first and second field oxide regions having a field oxide thickness and establishing a gap dimension representing a minimum distance from the substrate at a corner of the isolation trench to a top surface of the first or second field oxide regions, wherein the gap dimension is no greater than the field oxide thickness, but no less than half of the field oxide thickness.

6. The protection structure of claim 5, wherein the substrate is composed of silicon.

7. The protection structure of claim 5, wherein the first and second field oxide regions extend toward the first and second outermost side boundaries, respectively, of the polysilicon at least as far as the first and second side walls, respectively, of the isolation trench in the substrate.

8. The protection structure of claim 5, wherein the first and second field oxide regions do not penetrate the polysilicon material in the isolation trench.

9. A method of forming an isolation trench filled with polysilicon in a substrate, the method comprising:

forming the isolation trench in the substrate, the isolation trench having opposite first and second side walls;

lining the isolation trench with a first oxide layer;

filling the oxide-lined isolation trench with polysilicon having opposite first and second outermost side boundaries adjacent the first and second side walls, respectively, such that the first outermost side boundary is nearer to the first side wall than the second side wall, and the second outermost side boundary is nearer to the second side wall than the first side wall;

forming a second oxide layer over the substrate and the polysilicon-filled isolation trench;

forming a silicon nitride cap on the second oxide layer over the polysilicon-filled isolation trench, the silicon nitride cap extending from a first outermost lateral boundary situated laterally between the first outermost side boundary of the polysilicon and the first side wall of the isolation trench, and the silicon nitride cap extending to a second outermost lateral boundary situated laterally between the second outermost side boundary of the polysilicon and the second side wall of the isolation trench,

applying field oxidation to form first and second field oxide regions adjacent to the polysilicon-filled trench, the field oxide regions having a field oxide thickness and establishing a gap dimension from the substrate to a top surface of the field oxide regions adjacent to a corresponding polysilicon outer side boundary that is no less than half of the field oxide thickness.

10. The method of claim 9, wherein forming the isolation trench in the substrate comprises forming the trench with a depth of at least 15 μ

m.

11. The method of claim 9, further comprising:

removing the silicon nitride cap after applying the field oxidation.

12. The method of claim 9, wherein the first oxide layer lining the isolation trench is formed with a thickness of 500 nm.

13. The method of claim 9, wherein the second oxide layer over the substrate and the polysilicon-filled isolation trench is formed with a thickness of 20 nm.

14. The method of claim 9, wherein the field oxide thickness is 400 nm.