Hybrid system having a non-MEMS device and a MEMS device

• US 8,461,935 B2
• Filed: 11/30/2010
• Issued: 06/11/2013
• Est. Priority Date: 12/31/2007
• Status: Active Grant

• Current Assignee: Silicon Laboratories Incorporated
• Original Assignee: Silicon Laboratories Incorporated
• Inventors: McCraith, Andrew D., Miller, Richard S., Quevy, Emmanuel P.
• Primary Examiner(s): Chang, Joseph
• Application Number:
  US12/927,960
• Publication Number:
  US 20110074517A1
• Time in Patent Office: 924 Days
• Field of Search: 331/158, 331/116.R, 331/154
• US Class Current: 331/154
• CPC Class Codes: H03H 9/1057 for microelectro-mechanical devices
• CPC Class Codes: H03H 9/2426 in combination with other electronic elements

Abstract

A hybrid system having a non-MEMS device and a MEMS device is described. The apparatus includes a non-MEMS device and an integrated circuit including a MEMS device, the integrated circuit formed on a substrate. The integrated circuit includes a control circuit for the non-MEMS device and a MEMS control circuit for the MEMS device.

Claims

1. An apparatus, comprising:

a package;

a substrate housed in said package;

a non-MEMS device housed in said package; and

an integrated circuit coupled to the substrate, the integrated circuit comprising;

a plurality of devices formed in a semiconductor layer;

a MEMS device;

a MEMS control circuit, formed in a first portion of said plurality of semiconductor devices, for said MEMS device; and

a non-MEMS device control circuit for said non-MEMS device, formed in a second portion of said plurality of semiconductor devices;

where the non-MEMS device is configured to produce an output that is at least one of an oscillation output, temperature sensing output, pressure sensing output, chemical sensing output, inertial sensing output, or a combination thereof.

2. The apparatus of claim 1, wherein the integrated circuit is disposed above said substrate.

3. The apparatus of claim 1, wherein said non-MEMS device and said integrated circuit are each disposed above said substrate.

4. The apparatus of claim 1, wherein said semiconductor layer is disposed between said substrate and said MEMS device.

5. The apparatus of claim 1, wherein said MEMS device is disposed between said substrate and said semiconductor layer.

6. The apparatus of claim 1, wherein said non-MEMS device is a crystal-based device.

7. The apparatus of claim 1, wherein said MEMS control circuit comprises a MEMS oscillator circuit for generating an oscillation output.

8. The apparatus of claim 1, wherein said MEMS control circuit comprises a MEMS temperature sensor circuit for generating a temperature output.

9. The apparatus of claim 1, wherein said MEMS control circuit comprises a MEMS pressure sensor circuit for generating a pressure output.

10. The apparatus of claim 1, wherein said MEMS control circuit comprises a MEMS inertial sensor circuit for generating an inertial output.

11. The apparatus of claim 1, wherein said MEMS device is for detecting an environmental change.

12. The apparatus of claim 1, wherein said non-MEMS device is adjacent to said substrate.

13. The apparatus of claim 12, wherein the integrated circuit is flip-chip bonded to the substrate.

14. The apparatus of claim 12, wherein the integrated circuit is coupled by wire bonding to the substrate.

15. The apparatus of claim 1, wherein said non-MEMS device is a crystal, and wherein said control circuit for said non-MEMS device is a crystal control circuit.

16. The apparatus of claim 15, wherein the integrated circuit is disposed above said substrate.

17. The apparatus of claim 15, wherein said crystal and said integrated circuit are each disposed above said substrate.

18. The apparatus of claim 15, wherein said crystal is above said substrate, and wherein said MEMS device is disposed between said semiconductor layer and said crystal.

19. The apparatus of claim 15, wherein said crystal is above said substrate, and wherein said MEMS device is disposed between said substrate and said semiconductor layer.

20. The apparatus of claim 15, wherein said crystal is adjacent to said substrate.

21. The apparatus of claim 15, wherein said crystal comprises a material selected from the group consisting of quartz and a ceramic material.

22. The apparatus of claim 15, wherein said MEMS control circuit is coupled to said crystal control circuit.

23. The apparatus of claim 22, wherein said MEMS control circuit comprises a MEMS oscillator circuit for outputting an oscillation output into said crystal control circuit.

24. The apparatus of claim 22, wherein said MEMS control circuit comprises a MEMS pressure sensor circuit for outputting a pressure output into said crystal control circuit.

25. The apparatus of claim 22, wherein said MEMS control circuit comprises a MEMS inertial sensor circuit for outputting an inertial output into said crystal control circuit.

26. The apparatus of claim 22, wherein said crystal control circuit is a crystal oscillation circuit for outputting a crystal oscillation output into said MEMS control circuit.

27. The apparatus of claim 22, wherein said MEMS control circuit comprises a MEMS temperature sensor circuit for outputting a temperature output into said crystal control circuit.

28. The apparatus of claim 27, wherein said integrated circuit further comprises:

a MEMS oscillator circuit, formed in a third portion of said plurality of semiconductor devices, for generating an oscillation output.

29. The apparatus of claim 22, wherein said MEMS control circuit provides an output that is coupled as an input to said crystal control circuit.

30. The apparatus of claim 29, wherein said MEMS control circuit comprises a MEMS resonator.

31. An apparatus, comprising:

a package;

a substrate housed in said package;

a non-MEMS device housed in said package; and

an integrated circuit coupled to the substrate, the integrated circuit comprising;

a plurality of devices formed in a semiconductor layer;

a MEMS device;

a MEMS control circuit, formed in a first portion of said plurality of semiconductor devices, for said MEMS device; and

a non-MEMS device control circuit for said non-MEMS device, formed in a second portion of said plurality of semiconductor devices;

wherein said MEMS control circuit comprises a MEMS temperature sensor circuit for generating a temperature output, said integrated circuit further comprising;

a MEMS oscillator circuit, formed in a third portion of said plurality of semiconductor devices, for generating an oscillation output.

32. A method for crystal output compensation, comprising:

generating an output from a MEMS control circuit;

generating an output from a crystal control circuit, wherein said crystal control circuit is coupled to said MEMS control circuit;

inputting said output from said MEMS control circuit to said crystal control circuit; and

modifying said output from said crystal control circuit based on said output from said MEMS control circuit.

33. An apparatus, comprising:

a non-MEMS device; and

an integrated circuit formed on a substrate, said integrated circuit comprising;

a control circuit for said non-MEMS device;

a MEMS device; and

a MEMS control circuit for said MEMS device;

wherein said MEMS device is selected from the group consisting of a MEMS resonator, a MEMS temperature sensor, a MEMS inertial sensor, a MEMS pressure sensor, and a MEMS switch;

wherein said MEMS device is a MEMS resonator, and wherein said MEMS control circuit is a MEMS frequency circuit.

34. The apparatus of claim 33, wherein said MEMS frequency circuit is a MEMS oscillator circuit.

35. An apparatus, comprising:

a non-MEMS device; and

an integrated circuit formed on a substrate, said integrated circuit comprising;

a control circuit for said non-MEMS device;

a MEMS device; and

a MEMS control circuit for said MEMS device;

where the non-MEMS device is configured to produce an output that is at least one of an oscillation output, temperature sensing output, pressure sensing output, chemical sensing output, inertial sensing output, or a combination thereof.

36. The apparatus of claim 35, wherein said non-MEMS device is selected from the group consisting of a crystal, a thermistor, an accelerometer and a chemical sensor, and wherein said MEMS device is selected from the group consisting of a MEMS resonator, a MEMS temperature sensor, a MEMS inertial sensor, a MEMS pressure sensor, and a MEMS switch.

37. The apparatus of claim 35, wherein said non-MEMS device is selected from the group consisting of a crystal, a thermistor, an accelerometer and a chemical sensor, and wherein said MEMS device is selected from the group consisting of a MEMS temperature sensor, a MEMS inertial sensor, a MEMS pressure sensor, and a MEMS switch.

38. The apparatus of claim 35, wherein said non-MEMS device is a crystal-based device.

39. The apparatus of claim 35, wherein said MEMS device is for detecting an environmental change.

40. The apparatus of claim 35, wherein said MEMS control circuit is coupled to said control circuit for said non-MEMS device.

41. The apparatus of claim 40, wherein said non-MEMS device is a crystal, and wherein said control circuit for said non-MEMS device is a crystal oscillator circuit for outputting a crystal oscillation output into said MEMS control circuit.

42. The apparatus of claim 35, wherein said MEMS device is selected from the group consisting of a MEMS resonator, a MEMS temperature sensor, a MEMS inertial sensor, a MEMS pressure sensor, and a MEMS switch.

43. The apparatus of claim 35, wherein said integrated circuit comprises a plurality of semiconductor devices.

44. The apparatus of claim 35, wherein said non-MEMS device is a crystal and said control circuit for said non-MEMS device is a crystal control circuit, and wherein said MEMS control circuit provides an output that is coupled as an input to said crystal control circuit.

45. The apparatus of claim 35, wherein said MEMS device is selected from the group consisting of a MEMS temperature sensor, a MEMS inertial sensor, a MEMS pressure sensor, and a MEMS switch.

46. The apparatus of claim 35, wherein said non-MEMS device is selected from the group consisting of a crystal, a thermistor, an accelerometer and a chemical sensor.

47. The apparatus of claim 46, wherein said non-MEMS device is a crystal, and wherein said crystal and said integrated circuit are housed together in a single package.

48. The apparatus of claim 46, wherein said non-MEMS device is a crystal, and wherein said crystal comprises a material selected from the group consisting of quartz and a ceramic material.

49. An apparatus, comprising:

a package;

a substrate housed in said package;

a non-MEMS device housed in said package; and

an integrated circuit comprising;

a plurality of devices formed in a semiconductor layer disposed above said substrate;

a MEMS device disposed above said substrate;

a MEMS control circuit, formed in a first portion of said plurality of semiconductor devices, for said MEMS device; and

a non-MEMS device control circuit for said non-MEMS device, formed in a second portion of said plurality of semiconductor devices;

where the non-MEMS device is configured to produce an output that is at least one of an oscillation output, temperature sensing output, pressure sensing output, chemical sensing output, inertial sensing output, or a combination thereof.

50. The apparatus of claim 49, wherein said MEMS device is for detecting an environmental change.

51. The apparatus of claim 49, wherein said non-MEMS device is a crystal-based device.

52. The apparatus of claim 51, wherein said crystal-based device is above said substrate, and wherein said MEMS device is disposed between said semiconductor layer and said crystal-based device.

53. The apparatus of claim 51, wherein said crystal-based device is above said substrate, and wherein said MEMS device is disposed between said substrate and said semiconductor layer.

54. The apparatus of claim 51, wherein said crystal is adjacent to said substrate.

55. The apparatus of claim 51, wherein said MEMS control circuit is coupled to said non-MEMS device control circuit.

56. The apparatus of claim 55, wherein said crystal control circuit is a crystal oscillation circuit for outputting a crystal oscillation output into said MEMS control circuit.

57. The apparatus of claim 55, wherein said non-MEMS device control circuit is a crystal control circuit and said MEMS control circuit provides an output that is coupled as an input to said crystal control circuit.

58. The apparatus of claim 49, wherein said non-MEMS device is a crystal, and wherein said non-MEMS device control circuit for said non-MEMS device is a crystal control circuit.

59. The apparatus of claim 58, wherein said crystal is adjacent to said substrate.

60. The apparatus of claim 58, wherein said MEMS control circuit is coupled to said crystal control circuit.

61. The apparatus of claim 60, wherein said crystal comprises a material selected from the group consisting of quartz and a ceramic material.

62. The apparatus of claim 60, wherein said MEMS control circuit provides an output that is coupled as an input to said crystal control circuit.

63. An apparatus, comprising:

a package;

a non-MEMS device housed in said package, wherein said non-MEMS device is for producing a first output having a function;

a MEMS device housed in said package, wherein said MEMS device is for producing an second output having said function;

a control circuit housed in said package, wherein said control circuit is for said non-MEMS device; and

a MEMS control circuit housed in said package, wherein said MEMS control circuit is for said MEMS device;

wherein said function is selected from the group consisting of oscillation, temperature sensing, pressure sensing, chemical sensing and inertial sensing.

64. The apparatus of claim 63, wherein said non-MEMS device is selected from the group consisting of a crystal, a thermistor, an accelerometer and a chemical sensor, and wherein said MEMS device is selected from the group consisting of a MEMS resonator, a MEMS temperature sensor, a MEMS inertial sensor, a MEMS pressure sensor, and a MEMS switch.

65. The apparatus of claim 63, wherein said non-MEMS device is selected from the group consisting of a crystal, a thermistor, an accelerometer and a chemical sensor, and wherein said MEMS device is selected from the group consisting of a MEMS temperature sensor, a MEMS inertial sensor, a MEMS pressure sensor, and a MEMS switch.

66. The apparatus of claim 63, wherein said function is selected from the group consisting of oscillation, temperature sensing, pressure sensing and inertial sensing.

67. The apparatus of claim 63, wherein said function is selected from the group consisting of temperature sensing, pressure sensing and inertial sensing.

68. The apparatus of claim 63, wherein said control circuit for said non-MEMS device is coupled to said MEMS control circuit for said MEMS device.

69. The apparatus of claim 63, wherein said non-MEMS device is selected from the group consisting of a crystal, a thermistor, an accelerometer and a chemical sensor.

70. The apparatus of claim 63, wherein said MEMS device is selected from the group consisting of a MEMS resonator, a MEMS temperature sensor, a MEMS inertial sensor, a MEMS pressure sensor, and a MEMS switch.

71. The apparatus of claim 63, wherein said MEMS device is selected from the group consisting of a MEMS temperature sensor, a MEMS inertial sensor, a MEMS pressure sensor, and a MEMS switch.

72. The apparatus of claim 63, wherein said non-MEMS device is a crystal-based device.

73. The apparatus of claim 72, wherein said MEMS control circuit provides an output that is coupled as an input to said control circuit for said non-MEMS device.