Method for manufacturing indium tin oxide nanowires
First Claim
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1. A method for manufacturing indium tin oxide nanowires with a resistivity of about 10−
- 3 Ω
-cm, the method comprising;
preparing a precursor aqueous solution comprising a tin-containing specie and an indium-containing specie wherein the molar ratio of the tin-containing specie to the indium-containing specie is about 5 to about 15%;
preparing a polymer solution comprising an organic solvent;
mixing the precursor solution with the polymer solution to produce an electrospinning solution or sol-gel wherein together the tin-containing specie and the indium-containing specie are from about 2% to about 15% by weight of the electrospinning solution or sol-gel;
electrospinning the electrospinning solution or sol-gel at a relative humidity from about 15 to about 60 percent while irradiating the electrospinning solution or sol-gel with infrared radiation to provide the indium-tin nanowires with a cross-sectional thickness of from about 1 to about 100 micrometers;
drying the indium tin oxide nanowires at a drying temperature of about 100°
C. to about 200°
C. to a moisture content of less than about 20% by weight;
heating the indium tin oxide nanowires, at a rate between about 2 and about 20°
C. per minute from the drying temperature to a calcination temperature of from about 700°
C. to about 1000°
C.; and
maintaining the calcination temperature for a time from two hours to one week to provide indium tin oxide nanowires with a resistivity of about 10−
3 Ω
-cm.
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Abstract
A method for manufacturing indium tin oxide nanowires by preparing a solution that includes an indium-containing species, a tin-containing species and a polymeric material, wherein the solution has a molar ratio of tin to indium in a range from about 5 to about 15 percent, electrospinning fibers using the solution, and heating the fibers to a calcination temperature and maintaining the fibers at the calcination temperature for a predetermined calcination time.
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Citations
10 Claims
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1. A method for manufacturing indium tin oxide nanowires with a resistivity of about 10−
- 3 Ω
-cm, the method comprising;preparing a precursor aqueous solution comprising a tin-containing specie and an indium-containing specie wherein the molar ratio of the tin-containing specie to the indium-containing specie is about 5 to about 15%; preparing a polymer solution comprising an organic solvent; mixing the precursor solution with the polymer solution to produce an electrospinning solution or sol-gel wherein together the tin-containing specie and the indium-containing specie are from about 2% to about 15% by weight of the electrospinning solution or sol-gel; electrospinning the electrospinning solution or sol-gel at a relative humidity from about 15 to about 60 percent while irradiating the electrospinning solution or sol-gel with infrared radiation to provide the indium-tin nanowires with a cross-sectional thickness of from about 1 to about 100 micrometers; drying the indium tin oxide nanowires at a drying temperature of about 100°
C. to about 200°
C. to a moisture content of less than about 20% by weight;heating the indium tin oxide nanowires, at a rate between about 2 and about 20°
C. per minute from the drying temperature to a calcination temperature of from about 700°
C. to about 1000°
C.; andmaintaining the calcination temperature for a time from two hours to one week to provide indium tin oxide nanowires with a resistivity of about 10−
3 Ω
-cm. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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Current AssigneeThe Boeing Co.
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Original AssigneeThe Boeing Co.
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InventorsZhou, Chaoyin, Phelps, Amanda, Burns, Richard W., Li, Wen
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Primary Examiner(s)Del Sole, Joseph S
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Assistant Examiner(s)KEMMERLE III, RUSSELL J
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Application NumberUS12/787,774Time in Patent Office1,119 DaysField of Search264/639, 264/640US Class Current264/640CPC Class CodesC01G 19/02 OxidesD01F 9/08 of inorganic material worki...D04H 1/4209 Inorganic fibresD04H 1/728 by electro-spinning electro...H01B 1/08 oxidesY10T 428/12444 Embodying fibers interengag...
