Annealing a buffer layer for fabricating electronic devices on compliant substrates

• US 8,465,795 B2
• Filed: 05/20/2008
• Issued: 06/18/2013
• Est. Priority Date: 05/20/2008
• Status: Active Grant

• Current Assignee: Xerox Corporation (Xerox Holdings Corp.)
• Original Assignee: Palo Alto Research Center, Inc. (Xerox Holdings Corp.)
• Inventors: Lujan, Rene, Wong, William S., Greer, Julia Rosolovsky
• Primary Examiner(s): Talbot, Brian K
• Application Number:
  US12/123,732
• Publication Number:
  US 20090289333A1
• Time in Patent Office: 1,855 Days
• Field of Search: 427/97.1, 427/374.1
• US Class Current: 427/97.1
• CPC Class Codes: H01L 27/1218 with a particular composition or structure of the substrate

Abstract

A method of forming a thin-film layered electronic device over a flexible substrate comprises the steps of depositing a buffer layer over the flexible substrate, heating the substrate and buffer layer stack to a temperature at which plastic deformation of the buffer layer takes place, cooling the stack, then forming the thin-film electronic device over the plastically deformed buffer layer without further plastic deformation of the buffer layer. The heating and cooling to cause plastic deformation of the buffer layer is referred to as annealing. The thin-film electronic device is formed by a process according to which all steps are performed at a temperature below that at which further plastic deformation of the buffer layer occurs. In-process strain and runout are reduced, improving device yield on flexible substrates. An optional metal base layer may be formed over the buffer layer prior annealing.

Claims

1. A method of manufacturing a layered electronic device over a flexible plastic substrate, comprising:

depositing a buffer layer over said flexible plastic substrate;

forming a metal layer over and in physical contact with said buffer layer to thereby form a layer structure, such that said layer structure has a first lateral dimension and an induced first strain in said buffer layer;

heating said layer structure to an anneal temperature which is greater than the temperature at which the plastic substrate, the buffer layer, and the metal layer plastically deform such that said layer structure is deformed to have a second lateral dimension greater than said first lateral dimension and inducing a second strain in said buffer layer greater than said first strain;

cooling the layer structure such that said layer structure remains substantially at said second lateral dimension, and substantially with at least said second strain in said buffer layer;

following said cooling, forming over said metal layer a layered electronic device such that;

said metal layer forms a first metal layer of said electronic device;

said forming includes patterning of said metal layer;

said layered electronic device deposited at a temperature that does not exceed said anneal temperature such that upon cooling said flexible plastic substrate, said buffer layer, and said layered electronic device formed thereover substantially return to said second lateral dimension; and

said layered electronic device is formed so as to be free at lateral edges thereof such that stress therein may be relieved through bending and stretching of the device with the substrate.

2. The method of claim 1, wherein said buffer layer comprises:

a stacked structure of silicon dioxide and silicon nitride.

3. The method of claim 2, wherein said buffer layer is formed to be silicon dioxide layer in the range of 200-400 nanometers thick formed over a silicon nitride layer in the range of 200-400 nanometers thick.

4. The method of claim 3, wherein each of said silicon dioxide and said silicon nitride layers are approximately of the same thickness.

5. The method of claim 4, wherein each of said silicon dioxide and said silicon nitride layers are each approximately 300 nanometers thick.

6. The method of claim 1, wherein said flexible plastic substrate is polyethylene naphthalate.

7. The method of claim 1, further comprising:

depositing said buffer layer over said flexible plastic substrate under vacuum pressure within a vacuum chamber; and

wherein said step of heating is performed for approximately 30 minutes while maintaining the flexible plastic substrate and buffer layer under said vacuum pressure within said vacuum chamber, and further wherein the temperature within said vacuum chamber during said step of heating is approximately 180°

C.

8. The method of claim 1, wherein said metal layer is formed of tantalum, and is formed to be in the range of approximately 100-150 nanometers thick.

9. The method of claim 8, wherein said metal layer is formed to be approximately 120 nanometers thick.

10. The method of claim 1, further comprising:

depositing said buffer layer over said flexible plastic substrate and said metal layer over said buffer layer under vacuum pressure within a vacuum chamber; and

wherein said step of heating is performed for approximately 30 minutes while maintaining the layer structure under said vacuum pressure within said vacuum chamber, and further wherein the temperature within said vacuum chamber during said step of heating is approximately 180°

C.