Manufacturing method of group III nitride semiconductor

• US 8,465,997 B2
• Filed: 02/26/2010
• Issued: 06/18/2013
• Est. Priority Date: 03/24/2009
• Status: Active Grant

• Current Assignee: Toyoda Gosei Company Limited (Toyota Motor Corporation)
• Original Assignee: Toyoda Gosei Company Limited (Toyota Motor Corporation)
• Inventors: Okuno, Koji
• Primary Examiner(s): Ingham, John C
• Application Number:
  US12/659,173
• Publication Number:
  US 20100248455A1
• Time in Patent Office: 1,208 Days
• Field of Search: 438/46, 257/103, 257/615, 257/E21.125
• US Class Current: 438/46
• CPC Class Codes: H01L 21/0242 Crystalline insulating materials
• CPC Class Codes: H01L 21/02458 Nitrides
• CPC Class Codes: H01L 21/02502 consisting of two layers
• CPC Class Codes: H01L 21/02505 consisting of more than two layers
• CPC Class Codes: H01L 21/0254 Nitrides
• CPC Class Codes: H01L 21/02573 Conductivity type
• CPC Class Codes: H01L 21/02609 Crystal orientation

Abstract

A manufacturing method of a group III nitride semiconductor comprising: preparing a substrate including a buffer layer; forming a first layer on the buffer layer from a group III nitride semiconductor by MOCVD while doping an anti-surfactant, wherein a thickness of the first layer is equal to or thinner than 2 μm; forming a second layer on the first layer from a group III nitride semiconductor by MOCVD while doping at least one of surfactant and an anti-surfactant; and controlling a crystalline quality and a surface flatness of the second layer by adjusting an amount of the anti-surfactant and the surfactant doped during the formation of the second layer.

Claims

1. A manufacturing method of a group III nitride semiconductor, said method comprising:

preparing a substrate including a buffer layer;

disposing a first layer from a group III nitride semiconductor doped with an anti-surfactant by metalorganic vapor deposition (MOCVD) on a surface of the buffer layer, wherein a thickness of the first layer is equal to or less than 2 μ

m;

disposing a second layer to abut a surface of the first layer from a group III nitride semiconductor doped with at least one of a surfactant and an anti-surfactant by the MOCVD; and

controlling a crystalline quality and a surface flatness of the second layer by adjusting an amount of the at least one of the surfactant and the anti-surfactant doped during the disposing of the second layer.

2. The manufacturing method of the group III nitride semiconductor according to claim 1, wherein the second layer is doped by the surfactant.

3. The manufacturing method of the group III nitride semiconductor according to claim 1, wherein the disposing the second layer comprises:

forming a fifth layer on the first layer from a group HI nitride semiconductor while doping a surfactant; and

forming a non-doped sixth layer on the fifth layer from a group III nitride semiconductor.

4. The manufacturing method of the group III nitride semiconductor according to claim 1, wherein the anti-surfactant for the first layer comprises Si.

5. The manufacturing method of the group III nitride semiconductor according to claim 4, wherein the concentration of Si in the first layer is 1×

10¹⁸ to 1×

10²⁰ /cm³.

6. The manufacturing method of the group III nitride semiconductor according to claim 1, wherein the surfactant for the second layer comprises Mg.

7. The manufacturing method of the group III nitride semiconductor according to claim 6, wherein the concentration of Mg in the second layer is 1×

10¹⁸ to 1×

10²⁰ /cm³.

8. The manufacturing method of the group III nitride semiconductor according to claim 1, wherein the anti-surfactant for the first layer comprises Si and the surfactant for the second layer comprises Mg.

9. The manufacturing method of the group nitride semiconductor according to claim 8, wherein a concentration of Si in the first layer is 1×

10¹⁸ to 1×

10²⁰/cm³ and a concentration of Mg in the second layer is 1×

10¹⁷ to 1×

10²⁰ /cm³.

10. The manufacturing method of the group III nitride semiconductor according to claim 1, wherein a surface of the substrate, on which the first layer is formed, comprises a convex surface and a concave surface.

11. The manufacturing method of the group III nitride semiconductor according to claim 1, wherein the first layer and the second layer comprise GaN.

12. The manufacturing method of the group III nitride semiconductor according to claim 1, wherein the first layer and the second layer grow in a same crystal growth condition.

13. The manufacturing method of the group III nitride semiconductor according to claim 1, wherein the first layer abuts the surface of the buffer layer.

14. The manufacturing method of the group III nitride semiconductor according to claim 1, wherein the disposing the first layer comprises reducing a concentration of the anti-surfactant in the first layer toward the second layer.

15. The manufacturing method of the group III nitride semiconductor according to claim 14, wherein the disposing the second layer comprises reducing a concentration of the surfactant in the second layer toward the first layer.

16. The manufacturing method of the group III nitride semiconductor according to claim 1, wherein said controlling the crystalline quality and the surface flatness of the second layer is performed by adjusting the amount of the anti-surfactant doped during the disposing of the second layer.

17. A manufacturing method of a semiconductor of a light emitting diode (LED), said method comprising:

preparing a substrate including a buffer layer;

disposing a first layer from a group III nitride semiconductor doped with an anti-surfactant by metalorganic vapor deposition (MOCVD) on a surface of the buffer layer, wherein a thickness of the first layer is equal to or less than 2 μ

m;

disposing a second layer to abut a surface of the first layer from a group III nitride semiconductor doped with at least one of a surfactant and an anti-surfactant by the MOCVD; and

controlling a crystalline quality and a surface flatness of the second layer by adjusting an amount of the at least one of the surfactant and the anti-surfactant doped during the disposing of the second layer.