Manufacturing method of semiconductor device
First Claim
1. A manufacturing method of a semiconductor device comprising the steps of:
- forming a gate electrode layer over a substrate having an insulating surface;
forming a gate insulating layer over the gate electrode layer;
forming an oxide semiconductor layer over the gate insulating layer;
dehydrating or dehydrogenating the oxide semiconductor layer by a first treatment;
forming a source electrode layer and a drain electrode layer over the oxide semiconductor layer;
forming a protective insulating layer on the oxide semiconductor layer; and
dehydrating or dehydrogenating the oxide semiconductor layer by a second treatment after forming the protective insulating layer,wherein a thickness of the oxide semiconductor layer is greater than or equal to 5 nm and less than or equal to 200 nm, andwherein a treatment time of the second treatment is longer than a treatment time of the first treatment.
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Abstract
It is an object to provide a manufacturing method of a structure of a thin film transistor including an oxide semiconductor film, in which threshold voltage at which a channel is formed is positive and as close to 0 V as possible. A protective insulating layer is formed to cover a thin film transistor including an oxide semiconductor layer that is dehydrated or dehydrogenated by first heat treatment, and second heat treatment at a temperature that is lower than that of the first heat treatment, in which the increase and decrease in temperature are repeated plural times, is performed, whereby a thin film transistor including an oxide semiconductor layer, in which threshold voltage at which a channel is formed is positive and as close to 0 V as possible without depending on the channel length, can be manufactured.
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Citations
21 Claims
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1. A manufacturing method of a semiconductor device comprising the steps of:
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forming a gate electrode layer over a substrate having an insulating surface; forming a gate insulating layer over the gate electrode layer; forming an oxide semiconductor layer over the gate insulating layer; dehydrating or dehydrogenating the oxide semiconductor layer by a first treatment; forming a source electrode layer and a drain electrode layer over the oxide semiconductor layer; forming a protective insulating layer on the oxide semiconductor layer; and dehydrating or dehydrogenating the oxide semiconductor layer by a second treatment after forming the protective insulating layer, wherein a thickness of the oxide semiconductor layer is greater than or equal to 5 nm and less than or equal to 200 nm, and wherein a treatment time of the second treatment is longer than a treatment time of the first treatment. - View Dependent Claims (2, 3)
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4. A manufacturing method of a semiconductor device comprising the steps of:
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forming a gate electrode layer over a substrate having an insulating surface; forming a gate insulating layer over the gate electrode layer; forming an oxide semiconductor layer over the gate insulating layer; dehydrating or dehydrogenating the oxide semiconductor layer by a first heat treatment; forming a source electrode layer and a drain electrode layer over the oxide semiconductor layer; forming a protective insulating layer on the oxide semiconductor layer; and performing a second heat treatment, after forming the protective insulating layer, wherein a thickness of the oxide semiconductor layer is greater than or equal to 5 nm and less than or equal to 200 nm, and wherein a treatment time of the second heat treatment is longer than a treatment time of the first heat treatment. - View Dependent Claims (5, 6, 7, 8, 9, 10, 11, 21)
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12. A manufacturing method of a semiconductor device comprising the steps of:
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forming a first electrode layer over a substrate having an insulating surface; forming a first insulating layer over the first electrode layer; forming an oxide semiconductor layer over the first insulating layer; performing a first heat treatment on the oxide semiconductor layer after forming the oxide semiconductor layer; forming a second electrode layer over the oxide semiconductor layer; forming a second insulating layer on the oxide semiconductor layer; and performing a second heat treatment in which increase and decrease in temperature are repeated plural times on the oxide semiconductor layer, after forming the second insulating layer, wherein the second heat treatment is performed continuously. - View Dependent Claims (13, 14, 15, 16, 17, 18, 19, 20)
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Specification