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Thin film transistors in pixel and driving portions characterized by surface roughness

  • US 8,466,015 B2
  • Filed: 12/16/2011
  • Issued: 06/18/2013
  • Est. Priority Date: 12/19/2006
  • Status: Expired due to Fees
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1. A method of fabricating a thin film transistor, comprising:

  • providing a substrate including a pixel portion and a driver portion;

    forming an amorphous silicon layer on the substrate;

    forming a polycrystalline silicon layer by sequentially scanning a laser beam on the amorphous silicon layer in the pixel portion while moving the laser beam at a first scan pitch;

    forming a polycrystalline silicon layer by sequentially scanning the laser beam on the amorphous silicon layer in the driver portion while moving the laser beam at a second scan pitch smaller than the first scan pitch;

    patterning the polycrystalline silicon layer to form a first semiconductor layer having a first surface roughness in the pixel portion and a second semiconductor layer having a second surface roughness larger than the first surface roughness in the driver portion;

    forming a gate insulating layer on the substrate including the first and second semiconductor layers;

    forming first and second gate electrodes on the gate insulating layer to correspond to the first and second semiconductor layers;

    forming first and second source and drain regions by implanting an impurity ion into the first and second semiconductor layers;

    forming an interlayer insulating layer on the substrate including the first and second gate electrodes; and

    forming first and second source and drain electrodes on the interlayer insulating layer, the first and second source and drain electrodes being electrically connected with the first and second source and drain regions, respectively.

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