Light emitting diode and manufacturing method thereof
First Claim
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1. A method for manufacturing a light emitting diode, comprising:
- providing a substrate;
forming a semiconductor layer, having a plurality of pillars thereon, on the substrate;
re-crystallizing the semiconductor layer, wherein a plurality of voids is formed between each of adjacent two of the plurality of pillars and within the semiconductor layer, each of the plurality of voids enclosing air therein; and
disposing a semiconductor light emitting layer on the semiconductor layer.
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Abstract
A light emitting diode comprises a substrate, a buffer layer, a semiconductor layer and a semiconductor light emitting layer. The buffer layer is disposed on the substrate. The semiconductor layer is disposed on the buffer layer. The semiconductor light emitting layer is disposed on the semiconductor layer. A plurality of voids is defined within the semiconductor layer. Each void encloses air therein. A method for manufacturing the light emitting diode is also provided. Light generated by the semiconductor light emitting layer toward the substrate is reflected by the voids to emit out of the light emitting diode.
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Citations
11 Claims
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1. A method for manufacturing a light emitting diode, comprising:
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providing a substrate; forming a semiconductor layer, having a plurality of pillars thereon, on the substrate; re-crystallizing the semiconductor layer, wherein a plurality of voids is formed between each of adjacent two of the plurality of pillars and within the semiconductor layer, each of the plurality of voids enclosing air therein; and disposing a semiconductor light emitting layer on the semiconductor layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
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Specification