Method for producing a thin chip comprising an integrated circuit

• US 8,466,037 B2
• Filed: 09/11/2008
• Issued: 06/18/2013
• Est. Priority Date: 03/14/2006
• Status: Active Grant

• Current Assignee: Institut fuer Mikroelektronik Stuttgart
• Original Assignee: Institut fuer Mikroelektronik Stuttgart
• Inventors: Burghartz, Joachim N., Appel, Wolfgang, Zimmermann, Martin
• Primary Examiner(s): Le, Thao
• Assistant Examiner(s): GORDON, MATTHEW E
• Application Number:
  US12/208,585
• Publication Number:
  US 20090098708A1
• Time in Patent Office: 1,741 Days
• Field of Search: 438/458, 257/620, 257/E23.179, 257/E21.524
• US Class Current: 438/458
• CPC Class Codes: H01L 21/02002 Preparing wafers
• CPC Class Codes: H01L 21/7813 leaving a reusable substrate, e.g. epitaxial lift off

Abstract

In a method for producing a very thin chip including an integrated circuit, a circuit structure is produced in a defined section of a semiconductor wafer. The defined wafer section is subsequently released from the semiconductor wafer. For this purpose, the wafer section is firstly freed such that it is held only via local web-like connections on the remaining semiconductor wafer, which web-like connections are arranged at a lateral periphery of the wafer section. The web-like connections are subsequently severed.

Claims

1. A method for producing a plurality of thin film chips, each comprising an integrated circuit, the method comprising the steps of:

providing a semiconductor wafer having a top side and a bottom side,

producing a plurality of closed hidden wafer cavities near the top side, said closed hidden wafer cavities each having a lateral area extent that defines the chip area of one of said thin film chips above the respective wafer cavity, such that each chip area is substantially unsupported beneath the chip area,

producing at least one integrated circuit structure in at least one defined chip area suspended above a respective wafer cavity, and

separating the defined chip area from the semiconductor wafer,

wherein the step of separating includes a first process sequence, wherein a plurality of trenches down to the closed hidden cavities are produced along a substantial majority portion of the entire lateral periphery of said defined chiparea such that the defined chip area is primarily held on the semiconductor wafer via separated, residual web-like connections, which are arranged at the lateral periphery of said chip area above the respective wafer cavity, and

wherein the web-like connections are severed in a second process sequence by breaking the web-like connections.

2. The method of claim 1, wherein the web-like connections are broken by means of a pressure applied to the defined chip area rom above.

3. The method of claim 1, wherein the semiconductor wafer comprises a first semiconductor material at the top side and a second semiconductor material at the bottom side, and the step of producing the wafer cavities comprises the steps of:

producing a plurality of porous regions in the first semiconductor material, and

producing a cover layer on the top side, which covers the porous regions.

4. The method of claim 3, wherein each porous region is produced with a large-pored lower layer and a fine-pored upper layer.

5. The method of claim 4, wherein the wafer is heated after the porous regions have been produced, in order to produce the cover layer by thermically induced reflow of semiconductor material from the large-pored lower layer to the fine-pored upper layer.

6. The method of claim 4, wherein an epitaxial layer is grown at the top side in order to produce the cover layer.

18. The method of claim 1, wherein the semiconductor wafer comprises a crystal lattice having a [100] direction and a [110] direction, wherein the defined chip area is arranged parallel to the [100] direction or parallel to the [110] direction, and wherein the web-like connections are arranged at corners or at lateral edges of the defined wafer section.

7. A method for producing a thin film chips, each comprising an integrated circuit, the method comprising the steps of:

providing a semiconductor wafer having a top surface and a bottom surface, the semiconductor wafer being composed of a first semiconductor material at the top surface,

defining a plurality of chip areas at the top surface, with each chip area having a lateral periphery that defines one of said thin film chips,

producing at least one integrated circuit structure in at least one defined chip area, and

releasing the defined chip area from the semiconductor wafer,

wherein the step of defining the plurality of chip areas comprises a step of producing a plurality of closed wafer cavities below the top surface by producing a plurality of porous regions in the first semiconductor material, with each porous region laterally extending below and matching a defined chip area such that each chip area ia substantially unsupported beneath the chip area, and by producing a voer layer covering the porour regions so as to form the closed wafer cavities below the top surface,

wherein the defined chip area is freed in a first process sequence such that the chip area is held on the remaining semiconductor wafer primarily via spaced apart web-like connections in said cover layer, which are arranged along minor portions of the lateral periphery above the respective wafer cavity, and

wherein the web-like connections are severed in a second process sequence.

8. The method of claim 7, wherein the web-like connections are broken by means of a pressure applied to the defined wafer section from the top surface.

9. The method of claim 7, wherein the circuit structure is produced above the closed wafer cavity.

10. The method of claim 7, wherein each porous

11. The method of claim 7, wherein the wafer is heated after the porous regions have been produced, in order to produce the cover layer.

12. The method of claim 7, wherein a second semiconductor material is applied to the top side in order to produce the cover layer.

13. The method of claim 12, wherein the wafer comprises a third semiconductor material, which is arranged below the first semiconductor material, and wherein the porous regions are produced only in the first semiconductor material.

14. The method of claim 7, wherein the wafer section is freed from the top surface in the first process sequence.

15. The method of claim 7, wherein the first process sequence comprises a step of producing trenches at the top surface after the circuit structure has been produced in the defined chip area, the trenches surrounding the defined wafer section.

16. The method of claim 15, wherein the semiconductor wafer has at least one upper, one middle and one lower material layer, wherein the circuit structure is produced in the upper material layer, and wherein the middle material layer is etched out in the first process sequence in order to free the chip area.

17. The method of claim 16, wherein at least one passage opening is produced in the defined chip area in order to pass an etchant to the middle material layer.