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Capping layer for reduced outgassing

  • US 8,466,073 B2
  • Filed: 04/17/2012
  • Issued: 06/18/2013
  • Est. Priority Date: 06/03/2011
  • Status: Expired due to Fees
First Claim
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1. A method of forming a silicon oxide layer on a substrate, the method comprising:

  • forming a first layer comprising silicon, nitrogen and hydrogen by;

    flowing an unexcited precursor into a first remote plasma region to produce a radical-precursor,combining a carbon-free silicon-containing precursor with the radical-precursor in a first plasma-free substrate processing region, anddepositing a carbon-free silicon-nitrogen-and-hydrogen-containing layer over the substrate; and

    forming a second layer comprising silicon and oxygen by;

    flowing an unexcited oxygen-containing precursor into a second remote plasma region to produce a radical-oxygen precursor,combining a silicon-and-carbon-containing precursor with the radical-oxygen precursor in a second plasma-free substrate processing region, anddepositing a silicon-oxygen-and-carbon-containing capping layer over the carbon-free silicon-nitrogen-and-hydrogen-containing layer.

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