Capping layer for reduced outgassing
First Claim
1. A method of forming a silicon oxide layer on a substrate, the method comprising:
- forming a first layer comprising silicon, nitrogen and hydrogen by;
flowing an unexcited precursor into a first remote plasma region to produce a radical-precursor,combining a carbon-free silicon-containing precursor with the radical-precursor in a first plasma-free substrate processing region, anddepositing a carbon-free silicon-nitrogen-and-hydrogen-containing layer over the substrate; and
forming a second layer comprising silicon and oxygen by;
flowing an unexcited oxygen-containing precursor into a second remote plasma region to produce a radical-oxygen precursor,combining a silicon-and-carbon-containing precursor with the radical-oxygen precursor in a second plasma-free substrate processing region, anddepositing a silicon-oxygen-and-carbon-containing capping layer over the carbon-free silicon-nitrogen-and-hydrogen-containing layer.
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Abstract
A method of forming a silicon oxide layer is described. The method first deposits a silicon-nitrogen-and-hydrogen-containing (polysilazane) film by radical-component chemical vapor deposition (CVD). The silicon-nitrogen-and-hydrogen-containing film is formed by combining a radical precursor (excited in a remote plasma) with an unexcited carbon-free silicon precursor. A capping layer is formed over the silicon-nitrogen-and-hydrogen-containing film to avoid time-evolution of underlying film properties prior to conversion into silicon oxide. The capping layer is formed by combining a radical oxygen precursor (excited in a remote plasma) with an unexcited silicon-and-carbon-containing-precursor. The films are converted to silicon oxide by exposure to oxygen-containing environments. The two films may be deposited within the same substrate processing chamber and may be deposited without breaking vacuum.
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Citations
19 Claims
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1. A method of forming a silicon oxide layer on a substrate, the method comprising:
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forming a first layer comprising silicon, nitrogen and hydrogen by; flowing an unexcited precursor into a first remote plasma region to produce a radical-precursor, combining a carbon-free silicon-containing precursor with the radical-precursor in a first plasma-free substrate processing region, and depositing a carbon-free silicon-nitrogen-and-hydrogen-containing layer over the substrate; and forming a second layer comprising silicon and oxygen by; flowing an unexcited oxygen-containing precursor into a second remote plasma region to produce a radical-oxygen precursor, combining a silicon-and-carbon-containing precursor with the radical-oxygen precursor in a second plasma-free substrate processing region, and depositing a silicon-oxygen-and-carbon-containing capping layer over the carbon-free silicon-nitrogen-and-hydrogen-containing layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19)
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Specification