Thin film transistor and method of fabricating the same
First Claim
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1. A thin film transistor (TFT) comprising:
- a gate electrode;
an active layer overlapping the gate electrode, having contact regions that have a consistent thickness, and a remaining region that is thicker than the contact regions;
an etch stop layer covering the remaining region and exposing the contact regions; and
source and drain electrodes contacting the contact regions and directly contacting opposing surfaces of the remaining region.
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Abstract
A thin film transistor (TFT) including a gate electrode, an active layer, and source and drain electrodes. The active layer includes contact regions that contact the source and drain electrodes, which are thinner than a remaining region of the active layer. The contact regions reduce the contact resistance between the active material layer and the source and drain electrodes.
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Citations
8 Claims
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1. A thin film transistor (TFT) comprising:
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a gate electrode; an active layer overlapping the gate electrode, having contact regions that have a consistent thickness, and a remaining region that is thicker than the contact regions; an etch stop layer covering the remaining region and exposing the contact regions; and source and drain electrodes contacting the contact regions and directly contacting opposing surfaces of the remaining region. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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Specification