Semiconductor device and manufacturing method thereof
First Claim
Patent Images
1. A semiconductor device comprising:
- a gate electrode over a substrate;
a gate insulating film including a first insulating oxide film;
an oxide semiconductor layer on the first insulating oxide film, the oxide semiconductor layer including a channel region;
a pair of conductive layers on the oxide semiconductor layer; and
a second insulating oxide film over the oxide semiconductor layer and the pair of conductive layers, wherein the second insulating oxide film is in contact with a portion of the oxide semiconductor layer, the portion being between the pair of conductive layers,wherein an upper surface of the oxide semiconductor layer between the pair of conductive layers is etched so that the portion of the oxide semiconductor layer is thinner than portions of the oxide semiconductor layer below the pair of conductive layers, andwherein the oxide semiconductor layer comprises indium and zinc.
0 Assignments
0 Petitions
Accused Products
Abstract
An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.
739 Citations
22 Claims
-
1. A semiconductor device comprising:
-
a gate electrode over a substrate; a gate insulating film including a first insulating oxide film; an oxide semiconductor layer on the first insulating oxide film, the oxide semiconductor layer including a channel region; a pair of conductive layers on the oxide semiconductor layer; and a second insulating oxide film over the oxide semiconductor layer and the pair of conductive layers, wherein the second insulating oxide film is in contact with a portion of the oxide semiconductor layer, the portion being between the pair of conductive layers, wherein an upper surface of the oxide semiconductor layer between the pair of conductive layers is etched so that the portion of the oxide semiconductor layer is thinner than portions of the oxide semiconductor layer below the pair of conductive layers, and wherein the oxide semiconductor layer comprises indium and zinc. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
-
-
11. A display device comprising:
-
a gate electrode over a substrate; a gate insulating film including a first insulating oxide film; an oxide semiconductor layer on the first insulating oxide film, the oxide semiconductor layer including a channel region; a pair of conductive layers on the oxide semiconductor layer; and a second insulating oxide film over the oxide semiconductor layer and the pair of conductive layers, wherein the second insulating oxide film is in contact with a portion of the oxide semiconductor layer, the portion being between the pair of conductive layers, a pixel electrode over the second insulating oxide film, the pixel electrode being electrically connected to one of the pair of conductive layers, wherein the oxide semiconductor layer comprises indium and zinc, and wherein an upper surface of the oxide semiconductor layer between the pair of conductive layers is etched so that the portion of the oxide semiconductor layer is thinner than portions of the oxide semiconductor layer below the pair of conductive layers. - View Dependent Claims (12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22)
-
Specification