Thin film transistor having an oxide semiconductor bilayer, method of manufacturing the same and flat panel display device having the same
First Claim
1. A thin film transistor, comprising:
- a substrate;
an oxide semiconductor layer formed on the substrate and including a channel region, a source region and a drain region, the oxide semiconductor layer including a first layer portion and a second layer portion, the first layer portion having a first thickness and a first carrier concentration, the second layer portion having a second thickness and a second carrier concentration, each of the first carrier and the second carrier including an electron, the first layer and the second layer being made of the same material, the second carrier concentration being lower than the first carrier concentration;
a gate electrode insulated from the oxide semiconductor layer by a gate insulating film;
a source electrode coupled to the source region; and
a drain electrode coupled to the drain region.
2 Assignments
0 Petitions
Accused Products
Abstract
Disclosed is a thin film transistor which has an oxide semiconductor as an activation layer, a method of manufacturing the same and a flat panel display device having the same. The thin film transistor includes an oxide semiconductor layer formed on a substrate and including a channel region, a source region and a drain region, a gate electrode insulated from the oxide semiconductor layer by a gate insulating film, and source electrode and drain electrode which are coupled to the source region and the drain region, respectively. The oxide semiconductor layer includes a first layer portion and a second layer portion. The first layer portion has a first thickness and a first carrier concentration, and the second layer portion has a second thickness and a second carrier concentration. The second carrier concentration is lower than the first carrier concentration.
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Citations
24 Claims
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1. A thin film transistor, comprising:
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a substrate; an oxide semiconductor layer formed on the substrate and including a channel region, a source region and a drain region, the oxide semiconductor layer including a first layer portion and a second layer portion, the first layer portion having a first thickness and a first carrier concentration, the second layer portion having a second thickness and a second carrier concentration, each of the first carrier and the second carrier including an electron, the first layer and the second layer being made of the same material, the second carrier concentration being lower than the first carrier concentration; a gate electrode insulated from the oxide semiconductor layer by a gate insulating film; a source electrode coupled to the source region; and a drain electrode coupled to the drain region. - View Dependent Claims (2, 3, 4, 5, 6)
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7. A method of manufacturing a thin film transistor, comprising:
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forming a gate electrode on a substrate; forming a gate insulating film on the gate electrode; forming an oxide semiconductor layer on the gate insulating film, the oxide semiconductor layer insulated from the gate electrode by the gate insulating film, the oxide semiconductor layer including a channel region, a source region, and a drain region, the step of forming the oxide semiconductor layer comprising; depositing a first layer portion having a first thickness and a first carrier concentration, the first carrier including an electron; and depositing a second layer portion having a second thickness and a second carrier concentration, the second carrier including an electron, the first layer and the second layer being made of the same material, the second carrier concentration being lower than the first carrier concentration; forming a source electrode to be coupled to the source region; and forming a drain electrode to be coupled to the drain region. - View Dependent Claims (8, 9, 10, 11, 12, 13, 14)
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15. A flat panel display device, comprising:
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a first substrate comprising; a first conductive line; a second conductive line; a thin film transistors coupled to the first conductive line and the second conductive line; and a first electrode coupled to the thin film transistor, signals supplied to the first electrode being controlled by the thin film transistor; a second substrate including a second electrode; and a liquid crystal layer disposed between the first electrode and second electrode, the thin film transistor of the first substrate comprising; a substrate; an oxide semiconductor layer formed on the substrate and including a channel region, a source region and a drain region, the oxide semiconductor layer including a first layer portion and a second layer portion, the first layer portion having a first thickness and a first carrier concentration, the second layer portion having a second thickness and a second carrier concentration, each of the first carrier and the second carrier including an electron, the first layer and the second layer being made of the same material, the second carrier concentration being lower than the first carrier concentration; a gate electrode insulated from the oxide semiconductor layer by a gate insulating film; a source electrode coupled to the source region; and a drain electrode coupled to the drain region. - View Dependent Claims (16, 17, 18, 19)
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20. A flat panel display device, comprising:
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a first substrate comprising; an organic light emitting device including a first electrode, an organic thin film layer, and a second electrode; and a thin film transistor coupled to the organic light emitting device to control an operation of the organic light emitting device; and a second substrate disposed facing the first substrate, the thin film transistor of the first substrate comprising; a substrate; an oxide semiconductor layer formed on the substrate and including a channel region, a source region and a drain region, the oxide semiconductor layer including a first layer portion and a second layer portion, the first layer portion having a first thickness and a first carrier concentration, the second layer portion having a second thickness and a second carrier concentration, each of the first carrier and the second carrier including an electron, the first layer and the second layer being made of the same material, the second carrier concentration being lower than the first carrier concentration; a gate electrode insulated from the oxide semiconductor layer by a gate insulating film; a source electrode coupled to the source region; and a drain electrode coupled to the drain region. - View Dependent Claims (21, 22, 23, 24)
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Specification