Receiving circuit, LSI chip, and storage medium

• US 8,466,740 B2
• Filed: 10/27/2011
• Issued: 06/18/2013
• Est. Priority Date: 10/29/2010
• Status: Expired due to Fees

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Kamata, Koichiro
• Primary Examiner(s): LUU, AN T
• Application Number:
  US13/282,795
• Publication Number:
  US 20120105130A1
• Time in Patent Office: 600 Days
• Field of Search: None
• US Class Current: 327/586
• CPC Class Codes: H04B 5/26 using coils
• CPC Class Codes: H04B 5/72 for local intradevice communication

Abstract

A receiving circuit with a simple circuit structure for performing wireless communication utilizing electromagnetic induction is provided. An LSI chip and a storage medium where wireless communication utilizing electromagnetic induction is performed and the circuit scale and circuit size can be reduced are provided. The following receiving circuit may be used: a parallel circuit where two diode elements whose directions are opposite are connected in parallel is used, one end of the parallel circuit is connected to the other end of a coil whose one end is connected to a ground potential line, and a capacitor is connected in series with the other end of the parallel circuit. A transistor whose leakage current is markedly reduced may be used as a diode in the receiving circuit. Such a receiving circuit may be used in an LSI chip or a storage medium.

Claims

1. A receiving circuit comprising:

a parallel circuit comprising at least two diode elements whose directions are opposite are electrically connected in parallel;

a coil whose one end is electrically connected in series with one end of the parallel circuit and the other end is connected to grounded;

a capacitor whose one end is electrically connected in series with the other end of the parallel circuit and the other end is connected to grounded; and

a comparison circuit for detecting voltage of a node to which the parallel circuit and the capacitor are electrically connected.

2. The receiving circuit according to claim 1, wherein each of the at least two diode elements comprises a transistor whose threshold voltage is positive and a semiconductor layer used for a channel of the transistor includes an oxide semiconductor.

3. The receiving circuit according to claim 1,

wherein one of the at least two diode elements comprises first transistor and the other comprises second transistor;

wherein a gate electrode and a first electrode of the first transistor are electrically connected to one terminal of the coil, and a second electrode of the first transistor is electrically connected to the comparison circuit and one electrode of the capacitor; and

wherein a gate electrode and a first electrode of the second transistor are electrically connected to the comparison circuit and the one electrode of the capacitor, and the second electrode of the second transistor is electrically connected to the one terminal of the coil.

4. An LSI chip comprising the receiving circuit according to claim 1.

5. A storage medium comprising the receiving circuit according to claim 1.