Magnetic spin shift register memory
First Claim
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1. A memory device comprising:
- a shift register including a ferromagnetic material disposed in a cavity having an undulating inner surface profile, wherein the cavity is formed by alternating isotropic etching and passive polymer deposition processes and wherein a depth of the cavity is determined by a number of isotropic etching and passive polymer deposition process cycles;
a reading element disposed proximal to a portion of the shift register; and
a writing element disposed proximal to a second portion of the shift register.
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Abstract
A method for forming a memory device includes forming a cavity having an inner surface with an undulating profile in a substrate, depositing a ferromagnetic material in the cavity, forming a reading element on the substrate proximate to a portion of the ferromagnetic material, and forming a writing element on the substrate proximate to a second portion of the ferromagnetic material.
9 Citations
5 Claims
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1. A memory device comprising:
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a shift register including a ferromagnetic material disposed in a cavity having an undulating inner surface profile, wherein the cavity is formed by alternating isotropic etching and passive polymer deposition processes and wherein a depth of the cavity is determined by a number of isotropic etching and passive polymer deposition process cycles; a reading element disposed proximal to a portion of the shift register; and a writing element disposed proximal to a second portion of the shift register. - View Dependent Claims (2, 3, 4, 5)
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Specification