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Magnetic spin shift register memory

  • US 8,467,221 B2
  • Filed: 07/09/2010
  • Issued: 06/18/2013
  • Est. Priority Date: 07/09/2010
  • Status: Expired due to Fees
First Claim
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1. A memory device comprising:

  • a shift register including a ferromagnetic material disposed in a cavity having an undulating inner surface profile, wherein the cavity is formed by alternating isotropic etching and passive polymer deposition processes and wherein a depth of the cavity is determined by a number of isotropic etching and passive polymer deposition process cycles;

    a reading element disposed proximal to a portion of the shift register; and

    a writing element disposed proximal to a second portion of the shift register.

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