Techniques for partitioning radios in wireless communication systems

• US 8,467,827 B2
• Filed: 03/31/2005
• Issued: 06/18/2013
• Est. Priority Date: 03/31/2005
• Status: Expired due to Fees

• Current Assignee: Qualcomm, Inc.
• Original Assignee: Black Sand Technologies, Inc. (Qualcomm, Inc.)
• Inventors: Ouzillou, Mendy M.
• Primary Examiner(s): DOAN, KIET M
• Application Number:
  US11/096,255
• Publication Number:
  US 20060223577A1
• Time in Patent Office: 3,001 Days
• Field of Search: 455/556.1, 455/82, 455/333, 455/41.2, 455/90.2, 455/78, 455/553, 250/336.1, 257/533, 257/734, 257/700, 330/310, 343/700, 343/705, 333/193, 333/246, 370/310
• US Class Current: 455/552.1
• CPC Class Codes: H01L 2223/6677 for antenna, e.g. antenna included within housing of semiconductor device antennas per se H01Q
• CPC Class Codes: H01L 25/16 the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H01L 2924/3011 Impedance
• CPC Class Codes: H04B 1/48 in circuits for connecting transmitter and receiver to a common transmission path, e.g. by energy of transmitter H04B1/46 takes precedence

Abstract

A method and apparatus is provided for partitioning a radio using a multi-chip module to group some or all of the components of the radio in a single package. In one example, a radio uses a multi-chip module, including a chip carrier. Various components of the radio reside in integrated circuits that are mounted to the chip carrier. If desired, one or more antennas can be integrated into the chip carrier.

Claims

1. An RF apparatus used for wireless communications comprising:

a first integrated circuit;

a second integrated circuit;

a transceiver formed on the first integrated circuit; and

a multi-stage power amplifier electrically coupled to the transceiver, wherein at least one stage of the multi-stage power amplifier is formed on the first integrated circuit and at least one stage of the multi-stage power amplifier is formed on the second integrated circuit.

2. The RF apparatus of claim 1, wherein the multi-stage power amplifier includes a first stage and a final stage, wherein the first stage of the multi-stage power amplifier is formed on the first integrated circuit and the final stage of the multi-stage power amplifier is formed on the second integrated circuit.

3. The RF apparatus of claim 1, further comprising a chip carrier, wherein the first and second integrated circuits are mounted to the chip carrier.

4. The RF apparatus of claim 3, further comprising an antenna electrically coupled to the power amplifier, wherein the antenna is integrated in the chip carrier.

5. The RF apparatus of claim 4, wherein the chip carrier is a ceramic chip carrier.

6. The RE apparatus of claim 1, further comprising a baseband controller electrically coupled to the transceiver.

7. The RF apparatus of claim 6, further comprising an antenna switch module electrically coupled between the power amplifier and the antenna, wherein the antenna switch module is formed on the second integrated circuit.

8. The RF apparatus of claim 1, further comprising:

a third integrated circuit; and

an antenna switch module electrically coupled between the multi-stage power amplifier and an antenna, wherein the antenna switch module is formed on the third integrated circuit.

9. A method of providing wireless RF communications comprising:

forming a transceiver on a first integrated circuit;

forming a power amplifier at least partially on a second integrated circuit, wherein the power amplifier is electrically coupled to the transceiver;

mounting the first integrated circuit to a multi-layer chip carrier having a substrate;

mounting the second integrated circuit to the multi-layer chip carrier; and

forming an antenna in the substrate of the multi-layer chip carrier, wherein the antenna is electrically coupled to the power amplifier and the transceiver for transmitting and receiving RF signals.

10. The method of claim 9, wherein the chip carrier is a ceramic chip carrier.

11. The method of claim 9, wherein the power amplifier is a multi-stage power amplifier, the method further comprising:

forming at least one stage of the multi-stage power amplifier on the first integrated circuit and forming at least one stage of the multi-stage power amplifier on the second integrated circuit.

12. The method of claim 9, further comprising forming an antenna switch module on a third integrated circuit, wherein the antenna switch module is electrically coupled between the power amplifier and the antenna.

13. An RF apparatus used for wireless communications comprising:

a multi-chip module, the multi-chip module further comprising;

a multi-layer chip carrier having a substrate;

a first die mounted to the multi-layer chip carrier;

a second die mounted to the multi-layer chip carrier;

a power amplifier formed on the first die;

a transceiver formed on the second die; and

an antenna electrically coupled to the power amplifier, wherein the antenna is formed in the substrate of the multi-layer chip carrier.

14. The RF apparatus of claim 13, wherein the multi-chip module further comprises an antenna switch module electrically coupled between the power amplifier and the antenna, wherein the antenna switch module is formed on a third die, and wherein the antenna switch module is mounted to the multi-layer chip carrier.

15. The RF apparatus of claim 13, wherein the chip carrier is a ceramic chip carrier.

16. The RF apparatus of claim 13, further comprising a transceiver mounted to the chip carrier.

17. The RF apparatus of claim 16, further comprising a baseband controller electrically coupled to the transceiver.

18. The RE apparatus of claim 16, wherein the transceiver is formed on a second die.

19. The RE apparatus of claim 18, further comprising a baseband controller, wherein the baseband controller is formed on a second die.

20. The RE apparatus of claim 18, further comprising an antenna switch module electrically coupled between the power amplifier and the antenna, wherein the antenna switch module is formed on a third die.

21. The RE apparatus of claim 20, wherein the antenna switch module is mounted to the chip carrier.

22. The RF apparatus of claim 13, further comprising an antenna switch module electrically coupled between the power amplifier and the antenna.