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Method of manufacturing a light-emitting diode having electrically active and passive portions

  • US 8,470,618 B2
  • Filed: 09/15/2010
  • Issued: 06/25/2013
  • Est. Priority Date: 03/13/2006
  • Status: Expired due to Fees
First Claim
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1. A method of manufacturing a light-emitting diode, the method comprising:

  • (a) making a matrix in an epitaxial manner from a material comprising III-V nitride;

    (b) creating an active portion of the matrix through which electricity passes;

    (c) creating a passive portion of the matrix through which electricity passage is deterred, wherein the active portion and the passive portion are made in a monolithic and single piece manner from the material comprising III-V nitride; and

    (d) creating zones of at least one of;

    (i) a stack of quantum wells, and (ii) planes of quantum dots, the zones being in the active and passive portions.

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