Method of manufacturing a light-emitting diode having electrically active and passive portions
First Claim
Patent Images
1. A method of manufacturing a light-emitting diode, the method comprising:
- (a) making a matrix in an epitaxial manner from a material comprising III-V nitride;
(b) creating an active portion of the matrix through which electricity passes;
(c) creating a passive portion of the matrix through which electricity passage is deterred, wherein the active portion and the passive portion are made in a monolithic and single piece manner from the material comprising III-V nitride; and
(d) creating zones of at least one of;
(i) a stack of quantum wells, and (ii) planes of quantum dots, the zones being in the active and passive portions.
0 Assignments
0 Petitions
Accused Products
Abstract
The disclosure relates to a making a matrix of III-V nitride, the matrix including at least an active first portion through which an electrical current passes and at least a passive second portion through which no electrical current passes, the matrix including at least a first zone forming a first quantum confinement region made of a III-V nitride, the first zone being positioned in the active first portion, and at least a second zone forming a second quantum confinement region made of III-V nitride, such that the second zone is positioned to the passive portion of the matrix.
-
Citations
24 Claims
-
1. A method of manufacturing a light-emitting diode, the method comprising:
-
(a) making a matrix in an epitaxial manner from a material comprising III-V nitride; (b) creating an active portion of the matrix through which electricity passes; (c) creating a passive portion of the matrix through which electricity passage is deterred, wherein the active portion and the passive portion are made in a monolithic and single piece manner from the material comprising III-V nitride; and (d) creating zones of at least one of;
(i) a stack of quantum wells, and (ii) planes of quantum dots, the zones being in the active and passive portions. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
-
-
9. A method of manufacturing a light-emitting diode, the method comprising:
-
(a) making an electrically active area and an electrically passive area in a material comprising III-V nitride, wherein the active area and the passive area are made in a monolithic manner from the material comprising III-V nitride; (b) creating quantum confinement in the active area; (c) creating quantum confinement in the passive area; (d) creating a quantum gate between the areas; and (e) selecting quantum features for the active and passive areas so that a combination of a light signal corresponding to photon wavelengths diffuses a substantially temporally stable white light. - View Dependent Claims (10, 11, 12, 13, 14, 15, 16)
-
-
17. A method of making a light-emitting device, the method comprising:
-
(a) epitaxially growing an entire III-V nitride matrix in a monolithic manner; (b) creating an electrically conductive portion of the matrix including photon emitting features; (c) creating an electrically resistant portion of the matrix including photon emitting features pumped by the photons emitted from the conductive portion; and (d) creating the matrix to generate light in the whole visible spectrum. - View Dependent Claims (18, 19, 20, 21, 22, 23, 24)
-
Specification