Semiconductor device and manufacturing method for the same
First Claim
1. A method for manufacturing a semiconductor device, comprising the steps of:
- forming an oxide semiconductor film over a first gate electrode with a gate insulating film interposed therebetween;
forming a first conductive film including titanium, molybdenum, or tungsten, over the oxide semiconductor film;
forming a second conductive film over the first conductive film;
forming a source electrode and a drain electrode by etching of the first conductive film and the second conductive film;
forming an insulating film over the oxide semiconductor film, the source electrode, and the drain electrode; and
forming a second gate electrode over the insulating film,wherein the first gate electrode is over an insulating surface,wherein the insulating film is in contact with the oxide semiconductor film, andwherein the second gate electrode covers an entirety of the oxide semiconductor film.
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Abstract
An object is to provide a method for manufacturing a highly reliable semiconductor device including thin film transistors which have stable electric characteristics and are formed using an oxide semiconductor. A method for manufacturing a semiconductor device includes the steps of: forming an oxide semiconductor film over a gate electrode with a gate insulating film interposed between the oxide semiconductor film and the gate electrode, over an insulating surface; forming a first conductive film including at least one of titanium, molybdenum, and tungsten, over the oxide semiconductor film; forming a second conductive film including a metal having lower electronegativity than hydrogen, over the first conductive film; forming a source electrode and a drain electrode by etching of the first conductive film and the second conductive film; and forming an insulating film in contact with the oxide semiconductor film, over the oxide semiconductor film, the source electrode, and the drain electrode.
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Citations
27 Claims
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1. A method for manufacturing a semiconductor device, comprising the steps of:
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forming an oxide semiconductor film over a first gate electrode with a gate insulating film interposed therebetween; forming a first conductive film including titanium, molybdenum, or tungsten, over the oxide semiconductor film; forming a second conductive film over the first conductive film; forming a source electrode and a drain electrode by etching of the first conductive film and the second conductive film; forming an insulating film over the oxide semiconductor film, the source electrode, and the drain electrode; and forming a second gate electrode over the insulating film, wherein the first gate electrode is over an insulating surface, wherein the insulating film is in contact with the oxide semiconductor film, and wherein the second gate electrode covers an entirety of the oxide semiconductor film. - View Dependent Claims (2, 3, 4)
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5. A method for manufacturing a semiconductor device, comprising the steps of:
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forming an oxide semiconductor film over a first gate electrode with a gate insulating film interposed therebetween; forming a first conductive film including titanium, molybdenum, or tungsten, over the oxide semiconductor film; forming a second conductive film over the first conductive film; performing heat treatment in an inert atmosphere with the second conductive film exposed; forming a source electrode and a drain electrode by etching of the first conductive film and the second conductive film after performing the heat treatment; forming an insulating film over the oxide semiconductor film, the source electrode, and the drain electrode; and forming a second gate electrode over the insulating film, wherein the first gate electrode is over an insulating surface, wherein the insulating film is in contact with the oxide semiconductor film, and wherein the second gate electrode covers an entirety of the oxide semiconductor film. - View Dependent Claims (6, 7, 8, 9)
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10. A method for manufacturing a semiconductor device, comprising the steps of:
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forming an oxide semiconductor film over a gate electrode with a gate insulating film interposed therebetween; forming a first conductive film including titanium, molybdenum, or tungsten, over the oxide semiconductor film; forming a second conductive film including a metal having lower electronegativity than hydrogen, over the first conductive film; etching the second conductive film; forming a third conductive film including a metal having lower electronegativity than hydrogen over the first conductive film after the second conductive film is etched; forming a source electrode and a drain electrode by etching of the first conductive film and the third conductive film; and forming an insulating film over the oxide semiconductor film, the source electrode, and the drain electrode, wherein the gate electrode is over an insulating surface, and wherein the insulating film is in contact with the oxide semiconductor film. - View Dependent Claims (11, 12, 13)
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14. A method for manufacturing a semiconductor device, comprising the steps of:
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forming an oxide semiconductor film over a gate electrode with a gate insulating film interposed therebetween; forming a first conductive film including titanium, molybdenum, or tungsten, over the oxide semiconductor film; forming a second conductive film including a metal having lower electronegativity than hydrogen, over the first conductive film; performing heat treatment in an inert atmosphere with the second conductive film exposed; etching the second conductive film; forming a third conductive film including a metal having lower electronegativity than hydrogen over the first conductive film after the second conductive film is etched; forming a source electrode and a drain electrode by etching of the first conductive film and the third conductive film; and forming an insulating film over the oxide semiconductor film, the source electrode, and the drain electrode, wherein the gate electrode is over an insulating surface, and wherein the insulating film is in contact with the oxide semiconductor film. - View Dependent Claims (15, 16, 17, 18)
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19. A method for manufacturing a semiconductor device, comprising the steps of:
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forming an oxide semiconductor film over a gate electrode with a gate insulating film interposed therebetween; forming a first conductive film including titanium, molybdenum, or tungsten, over the oxide semiconductor film; forming a second conductive film including a metal having lower electronegativity than hydrogen, over the first conductive film; etching the second conductive film; forming a third conductive film including a metal having lower electronegativity than hydrogen over the first conductive film after the second conductive film is etched; forming a fourth conductive film including titanium, molybdenum, or tungsten, over the third conductive film; forming a source electrode and a drain electrode by etching of the first conductive film, the third conductive film, and the fourth conductive film; and forming an insulating film over the oxide semiconductor film, the source electrode, and the drain electrode, wherein the gate electrode is over an insulating surface, and wherein the insulating film is in contact with the oxide semiconductor film. - View Dependent Claims (20, 21, 22)
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23. A method for manufacturing a semiconductor device, comprising the steps of:
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forming an oxide semiconductor film over a gate electrode with a gate insulating film interposed therebetween; forming a first conductive film including titanium, molybdenum, or tungsten, over the oxide semiconductor film; forming a second conductive film including a metal having lower electronegativity than hydrogen, over the first conductive film; performing heat treatment in an inert atmosphere with the second conductive film exposed; etching the second conductive film; forming a third conductive film including a metal having lower electronegativity than hydrogen over the first conductive film after the second conductive film is etched; forming a fourth conductive film including titanium, molybdenum, or tungsten, over the third conductive film; forming a source electrode and a drain electrode by etching of the first conductive film, the third conductive film, and the fourth conductive film; and forming an insulating film over the oxide semiconductor film, the source electrode, and the drain electrode, wherein the gate electrode is over an insulating surface, and wherein the insulating film is in contact with the oxide semiconductor film. - View Dependent Claims (24, 25, 26, 27)
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Specification