Light-emitting element and a production method therefor

• US 8,471,239 B2
• Filed: 04/23/2009
• Issued: 06/25/2013
• Est. Priority Date: 04/25/2008
• Status: Active Grant

• Current Assignee: Suzhou Lekin Semiconductor Company Limited
• Original Assignee: LG Innotek Company Limited (LG Corporation)
• Inventors: Song, June O
• Primary Examiner(s): Sandvik, Benjamin
• Assistant Examiner(s): Cruz, Leslie Pilar
• Application Number:
  US12/989,200
• Publication Number:
  US 20110108798A1
• Time in Patent Office: 1,524 Days
• Field of Search: None
• US Class Current: 257/13
• CPC Class Codes: H01L 33/0093 Wafer bonding; Removal of the growth substrate
• CPC Class Codes: H01L 33/14 with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
• CPC Class Codes: H01L 33/22 Roughened surfaces, e.g. at the interface between epitaxial layers

Abstract

Disclosed is a light emitting device. The light emitting device includes a support substrate; a planar layer over the support substrate; a wafer bonding layer over the planar layer; a current spreading layer over the wafer bonding layer; a second conductive semiconductor layer over the current spreading layer; an active layer over the second conductive semiconductor layer; a first conductive semiconductor layer over the active layer; a first electrode layer over the first conductive semiconductor layer; and a second electrode layer over the current spreading layer.

Claims

1. A light emitting device comprising:

a support substrate;

a planar layer over the support substrate;

a current spreading layer over the planar layer;

a bonding layer configured to bond to the planar layer and to bond to the current spreading layer, the bonding layer being between the planar layer and the current spreading layer;

a second conductive semiconductor layer over the current spreading layer;

an active layer over the second conductive semiconductor layer;

a first conductive semiconductor layer over the active layer;

a first electrode layer over the first conductive semiconductor layer;

a second electrode layer over the current spreading layer; and

a concavo-convex structure at a region where the support substrate and the planar layer contact each other,

wherein at least one of the planar layer and the bonding layer includes a transparent material.

2. The light emitting device of claim 1, further comprising a reflective layer under the support substrate.

3. The light emitting device of claim 1, further comprising a light extracting structure layer over the first conductive semiconductor layer.

4. The light emitting device of claim 1, further comprising a superlattice structure layer between the second conductive semiconductor layer and the current spreading layer.

5. The light emitting device of claim 1, wherein the support substrate is formed on a top surface thereof with the concavo-convex structure.

6. The light emitting device of claim 1, wherein the bonding layer includes one of SiO₂, SiN_x, Al₂O₃, ZnO, ZnS, MgF₂, and SOG (spin on glass).

7. The light emitting device of claim 1, wherein the current spreading layer includes one of Ni—

Au—

O, ITO, and ZnO.

8. The light emitting device of claim 1, wherein the second electrode directly contacts the current spreading layer.

9. The light emitting device of claim 1, further comprising an ohmic contact layer between the first conductive semiconductor layer and the first electrode layer.

10. The light emitting device of claim 9, further comprising a light extracting structure layer between the first conductive semiconductor layer and the ohmic contact layer, the light extracting structure layer having a second concavo-convex structure.

11. The light emitting device of claim 10, wherein the ohmic contact layer comprises a third concavo-convex structure on the light extracting structure layer.

12. The light emitting diode of claim 9, wherein the first electrode layer is directly disposed on the ohmic contact layer.