Light-emitting element and a production method therefor
First Claim
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1. A light emitting device comprising:
- a support substrate;
a planar layer over the support substrate;
a current spreading layer over the planar layer;
a bonding layer configured to bond to the planar layer and to bond to the current spreading layer, the bonding layer being between the planar layer and the current spreading layer;
a second conductive semiconductor layer over the current spreading layer;
an active layer over the second conductive semiconductor layer;
a first conductive semiconductor layer over the active layer;
a first electrode layer over the first conductive semiconductor layer;
a second electrode layer over the current spreading layer; and
a concavo-convex structure at a region where the support substrate and the planar layer contact each other,wherein at least one of the planar layer and the bonding layer includes a transparent material.
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Abstract
Disclosed is a light emitting device. The light emitting device includes a support substrate; a planar layer over the support substrate; a wafer bonding layer over the planar layer; a current spreading layer over the wafer bonding layer; a second conductive semiconductor layer over the current spreading layer; an active layer over the second conductive semiconductor layer; a first conductive semiconductor layer over the active layer; a first electrode layer over the first conductive semiconductor layer; and a second electrode layer over the current spreading layer.
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Citations
12 Claims
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1. A light emitting device comprising:
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a support substrate; a planar layer over the support substrate; a current spreading layer over the planar layer; a bonding layer configured to bond to the planar layer and to bond to the current spreading layer, the bonding layer being between the planar layer and the current spreading layer; a second conductive semiconductor layer over the current spreading layer; an active layer over the second conductive semiconductor layer; a first conductive semiconductor layer over the active layer; a first electrode layer over the first conductive semiconductor layer; a second electrode layer over the current spreading layer; and a concavo-convex structure at a region where the support substrate and the planar layer contact each other, wherein at least one of the planar layer and the bonding layer includes a transparent material. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12)
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Specification