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Semiconductor layer structure with superlattice

  • US 8,471,240 B2
  • Filed: 01/19/2011
  • Issued: 06/25/2013
  • Est. Priority Date: 07/27/2006
  • Status: Active Grant
First Claim
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1. An optoelectronic component comprising a semiconductor layer structure, the semiconductor layer structure comprising a superlattice composed of stacked layers of a first and at least one second type, whereinsaid layers of said first type and of said at least one second type are III-V compound semiconductors,adjacent layers of different types in said superlattice differ in composition with respect to at least one element,at least two layers of the same type in said superlattice have a different content of at least one element,the content of at least one element is graded within a layer of said superlattice, andsaid layers of said superlattice contain dopants in predefined concentrations, with said superlattice comprising layers that are doped with different dopants.

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