Semiconductor device and method for manufacturing the same
First Claim
1. A semiconductor device comprising:
- an insulating base film over a substrate;
a gate electrode over the insulating base film;
a first insulating layer over and in contact with the insulating base film and the gate electrode;
an oxide semiconductor layer over the first insulating layer;
a source electrode and a drain electrode over and in electrical contact with the oxide semiconductor layer; and
a second insulating layer over and in contact with the oxide semiconductor layer, the source electrode, and the drain electrode,wherein the source electrode and the drain electrode each comprise;
a first layer over the oxide semiconductor layer, the first layer comprising copper; and
a second layer over the first layer, the second layer comprising a conductive metal nitride.
1 Assignment
0 Petitions
Accused Products
Abstract
Disclosed is a semiconductor device comprising a thin film transistor and wirings connected to the thin film transistor, in which the thin film transistor has a channel formation region in an oxide semiconductor layer, and a copper metal is used for at least one of a gate electrode, a source electrode, a drain electrode, a gate wiring, a source wiring, and a drain wiring. The extremely low off current of the transistor with the oxide semiconductor layer contributes to reduction in power consumption of the semiconductor device. Additionally, the use of the copper metal allows the combination of the semiconductor device with a display element to provide a display device with high display quality and negligible defects, which results from the low electrical resistance of the wirings and electrodes formed with the copper metal.
-
Citations
52 Claims
-
1. A semiconductor device comprising:
-
an insulating base film over a substrate; a gate electrode over the insulating base film; a first insulating layer over and in contact with the insulating base film and the gate electrode; an oxide semiconductor layer over the first insulating layer; a source electrode and a drain electrode over and in electrical contact with the oxide semiconductor layer; and a second insulating layer over and in contact with the oxide semiconductor layer, the source electrode, and the drain electrode, wherein the source electrode and the drain electrode each comprise; a first layer over the oxide semiconductor layer, the first layer comprising copper; and a second layer over the first layer, the second layer comprising a conductive metal nitride. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13)
-
-
14. A semiconductor device comprising:
-
an insulating base film over a substrate; a gate electrode over the insulating base film; a first insulating layer over and in contact with the insulating base film and the gate electrode; an oxide semiconductor layer over the first insulating layer; a source electrode and a drain electrode over and in electrical contact with the oxide semiconductor layer; and a second insulating layer over and in contact with the oxide semiconductor layer, the source electrode, and the drain electrode, wherein the source electrode and the drain electrode each comprise; a first layer being in contact with the first insulating layer and comprising a conductive metal nitride; a second layer being over the first layer and comprising copper; and a third layer over the second layer, the third layer comprising the conductive metal nitride. - View Dependent Claims (15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26)
-
-
27. A semiconductor device comprising:
-
an insulating base film over a substrate; a gate electrode over the insulating base film; a first insulating layer over and in contact with the insulating base film and the gate electrode; an oxide semiconductor layer over the first insulating layer; a second insulating layer over and in contact with the oxide semiconductor layer; a source electrode and a drain electrode over and in contact with the oxide semiconductor layer and the second insulating layer; and a third insulating layer over and in contact with the second insulating layer, the source electrode, and the drain electrode, wherein at least one of the gate electrode, the source electrode, and the drain electrode comprises copper. - View Dependent Claims (28, 29, 30, 31, 32, 33, 34, 35, 36, 37, 38, 39, 40)
-
-
41. A semiconductor device comprising:
-
a gate electrode over a substrate; a gate insulating layer over the gate electrode; an oxide semiconductor layer over the gate insulating layer; a second silicon oxide layer comprising a region which is in contact with the oxide semiconductor layer; and a source electrode and a drain electrode over the second silicon oxide layer, wherein the gate electrode comprises a stack of a first layer comprising Ti and a second layer comprising Cu, wherein the gate insulating layer comprises a stack of a silicon nitride layer and a first silicon oxide layer, and wherein the silicon nitride layer covers the second layer. - View Dependent Claims (42, 43, 44, 45, 46)
-
-
47. A semiconductor device comprising:
-
a gate electrode over a substrate; a gate insulating layer over the gate electrode; an oxide semiconductor layer over the gate insulating layer; a second silicon oxide layer comprising a region which is in contact with the oxide semiconductor layer; and a source electrode and a drain electrode over the second silicon oxide layer, wherein the gate electrode comprises a stack of a first layer comprising an element selected from Cr, Ta, Ti, Mo, and W and a second layer comprising Cu, wherein the gate insulating layer comprises a stack of a silicon nitride layer and a first silicon oxide layer, and wherein the silicon nitride layer comprises a region which is in contact with the second layer. - View Dependent Claims (48, 49, 50, 51, 52)
-
Specification