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Semiconductor device and method for manufacturing the same

  • US 8,471,256 B2
  • Filed: 11/24/2010
  • Issued: 06/25/2013
  • Est. Priority Date: 11/27/2009
  • Status: Active Grant
First Claim
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1. A semiconductor device comprising:

  • an insulating base film over a substrate;

    a gate electrode over the insulating base film;

    a first insulating layer over and in contact with the insulating base film and the gate electrode;

    an oxide semiconductor layer over the first insulating layer;

    a source electrode and a drain electrode over and in electrical contact with the oxide semiconductor layer; and

    a second insulating layer over and in contact with the oxide semiconductor layer, the source electrode, and the drain electrode,wherein the source electrode and the drain electrode each comprise;

    a first layer over the oxide semiconductor layer, the first layer comprising copper; and

    a second layer over the first layer, the second layer comprising a conductive metal nitride.

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