Light emitting device

• US 8,471,268 B2
• Filed: 09/02/2011
• Issued: 06/25/2013
• Est. Priority Date: 12/15/2006
• Status: Expired due to Fees

• Current Assignee: Samsung Electronics Co. Ltd.
• Original Assignee: Samsung Electronics Co. Ltd.
• Inventors: Moon, Won Ha, Choi, Chang Hwan, Kim, Dong Woohn, Kim, Hyun Jun
• Primary Examiner(s): Vu, David
• Assistant Examiner(s): TAYLOR, EARL N
• Application Number:
  US13/224,676
• Publication Number:
  US 20110315957A1
• Time in Patent Office: 662 Days
• Field of Search: 257/13, 257/30, 257/102, 257/E29.071, 257/79, 977/774, 313/498, 313/503
• US Class Current: 257/79
• CPC Class Codes: H01L 2933/0083 Periodic patterns for optical field-shaping in or on the semiconductor body or semiconductor body package, e.g. photonic bandgap structures
• CPC Class Codes: H01L 33/0037 having a MIS barrier layer
• CPC Class Codes: H01L 33/08 with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body H01L27/15 takes precedence
• CPC Class Codes: H01L 33/22 Roughened surfaces, e.g. at the interface between epitaxial layers
• CPC Class Codes: Y10S 977/762 Nanowire or quantum wire, i.e. axially elongated structure having two dimensions of 100 nm or less

Abstract

There is provided a light emitting device of a simpler structure, capable of ensuring a broad light emitting area and a high light emitting efficiency, while manufactured in a simplified and economically efficient process. The light emitting device including: a semiconductor layer; an active layer formed on the semiconductor layer, the active layer comprising at least one of a quantum well structure, a quantum dot and a quantum line; an insulating layer formed on the active layer; and a metal layer formed on the insulating layer.

Claims

1. A light emitting device comprising:

a semiconductor layer;

an active layer formed on the semiconductor layer, the active layer including a plurality of quantum dots, a plurality of quantum well structures, or a plurality of quantum lines;

an insulating layer formed on the active layer; and

a metal layer formed on the insulating layer,

wherein the semiconductor layer, the insulating layer and the metal layer have microstructures disposed on surfaces thereof, respectively.

2. The light emitting device of claim 1, wherein the active layer comprises a plurality of quantum dots, and the plurality of quantum dots comprise a GaN-based compound.

3. The light emitting device of claim 1,

wherein the active layer comprises a plurality of quantum lines, and the plurality of quantum lines comprise at least one of a group III-V compound semiconductor and a group II-VI compound semiconductor.

4. The light emitting device of claim 3, further comprising:

an organic compound surrounding the plurality quantum lines.

5. A light emitting device comprising:

a semiconductor layer;

an active layer formed on the semiconductor layer, the active layer including a plurality of quantum dots, a plurality of quantum lines, or a plurality of quantum well structures;

an insulating layer formed on the active layer; and

a metal layer formed on the insulating layer, the metal layer having a plurality of holes formed in a surface thereof,

wherein, if the active layer includes quantum dots, the quantum dots comprise at least one of a group III-V compound semiconductor and a group II-VI compound semiconductor,

wherein the holes are extended to a portion between a top of the insulating layer and a top of the active layer.

6. The light emitting device of claim 5, further comprising a photonic crystal structure formed on one surface thereof.

7. A light emitting device comprising:

a semiconductor layer;

an active layer formed on the semiconductor layer, the active layer including a plurality of quantum dots, a plurality of quantum lines, or a plurality of quantum well structures;

an insulating layer formed on the active layer; and

a metal layer formed on the insulating layer, the metal layer having a plurality of holes formed in a surface thereof,

wherein, if the quantum layer includes quantum dots, the quantum dots comprise at least one of a group III-V compound semiconductor and a group II-VI compound semiconductor,

wherein the holes have a diameter and a spacing of 200 nm to 1000 nm, respectively.

8. A light emitting device comprising:

a semiconductor layer;

an active layer formed on the semiconductor layer, the active layer including a plurality of quantum dots or a plurality of quantum lines;

an insulating layer formed on the active layer; and

a metal layer formed on the insulating layer, further comprising a substrate, wherein a stack having the semiconductor layer, the active layer, the insulating layer and the metal layer sequentially stacked is formed on the substrate,

wherein the stack is a nanowire structure,

wherein, if the active layer includes quantum dots, the quantum dots comprise at least one of a group III-V compound semiconductor and a group II-VI compound semiconductor.

9. The light emitting device of claim 8, wherein the active layer includes the plurality of quantum dots, and quantum dots comprise a GaN-based compound.