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Tunnel FET and methods for forming the same

  • US 8,471,329 B2
  • Filed: 11/16/2011
  • Issued: 06/25/2013
  • Est. Priority Date: 11/16/2011
  • Status: Active Grant
First Claim
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1. A tunnel field-effect transistor (TFET) comprising:

  • a gate electrode;

    a source region;

    a drain region, wherein the source and drain regions are of opposite conductivity types;

    a channel region between the source region and the drain region; and

    a source diffusion barrier between the channel region and the source region, wherein the source diffusion barrier and the source region are under and overlapping the gate electrode, and wherein the source diffusion barrier has a first bandgap greater than second bandgaps of the source region, the drain region, and the channel region.

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