Tunnel FET and methods for forming the same
First Claim
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1. A tunnel field-effect transistor (TFET) comprising:
- a gate electrode;
a source region;
a drain region, wherein the source and drain regions are of opposite conductivity types;
a channel region between the source region and the drain region; and
a source diffusion barrier between the channel region and the source region, wherein the source diffusion barrier and the source region are under and overlapping the gate electrode, and wherein the source diffusion barrier has a first bandgap greater than second bandgaps of the source region, the drain region, and the channel region.
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Abstract
A tunnel field-effect transistor (TFET) includes a gate electrode, a source region, and a drain region. The source and drain regions are of opposite conductivity types. A channel region is disposed between the source region and the drain region. A source diffusion barrier is disposed between the channel region and the source region. The source diffusion barrier and the source region are under and overlapping the gate electrode. The source diffusion barrier has a first bandgap greater than second bandgaps of the source region, the drain region, and the channel region.
25 Citations
20 Claims
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1. A tunnel field-effect transistor (TFET) comprising:
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a gate electrode; a source region; a drain region, wherein the source and drain regions are of opposite conductivity types; a channel region between the source region and the drain region; and a source diffusion barrier between the channel region and the source region, wherein the source diffusion barrier and the source region are under and overlapping the gate electrode, and wherein the source diffusion barrier has a first bandgap greater than second bandgaps of the source region, the drain region, and the channel region. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A tunnel field-effect transistor (TFET) comprising:
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a source region; a drain region, wherein the source and drain regions are of opposite conductivity types; a channel region between the source region and the drain region; and a source diffusion barrier between the channel region and the source region, wherein each of the source region, the drain region, the channel region, and the source diffusion barrier comprises a III-V compound semiconductor material. - View Dependent Claims (9, 10, 11, 12, 13, 14)
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15. A tunnel field-effect transistor (TFET) comprising:
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a gate electrode; a source region; a drain region, wherein the source and drain regions are of opposite conductivity types; a channel region under the gate electrode and between the source region and the drain region; and a source diffusion barrier spacing the channel region apart from the source region, wherein the source diffusion barrier has; a first conduction band greater than second conduction bands of the source region, the drain region, and the channel region; and a first valence band lower than second valence bands of the source region, the drain region, and the channel region. - View Dependent Claims (16, 17, 18, 19, 20)
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Specification