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Silicon-on-insulator (SOI) structure configured for reduced harmonics and method of forming the structure

  • US 8,471,340 B2
  • Filed: 11/30/2009
  • Issued: 06/25/2013
  • Est. Priority Date: 11/30/2009
  • Status: Active Grant
First Claim
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1. A semiconductor structure comprise:

  • a semiconductor substrate a first surface and a second surface opposite said first surface, said semiconductor substrate comprising;

    a first portion adjacent to said first surface and comprising, in a first concentration, a dopant having a given conductivity type such that said first portion has said given conductivity type; and

    a second portion extending from said first portion to said second surface, said second portion comprising, in a second concentration greater than said first concentration, any of the following such that said second portion has said given conductivity type;

    a same dopant as in said first portion,a different dopant than in said first portion, said different dopant having said given conductivity type, anda combination of said same dopant as in said first portion and said different dopant than in said first portion;

    an insulator layer on said semiconductor substrate immediately adjacent to said second surface; and

    at least one semiconductor device on said insulator layer directly above said first portion and said second portion.

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