3D inductor and transformer
First Claim
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1. A semiconductor device comprising:
- a semiconductor die comprising a first metallization layer, the first metallization layer comprising a first conductive pattern, the first conductive pattern being in a first dielectric layer;
an interposer comprising a substrate and a second metallization layer on the substrate, the second metallization layer comprising a second conductive pattern, the second conductive pattern being in a second dielectric layer;
first conductive bumps on a first side of the interposer and bonding the semiconductor die to the interposer, some of the first conductive bumps electrically coupling the first conductive pattern to the second conductive pattern to form a coil; and
second conductive bumps on a second side of the interposer, the second side being opposite the first side.
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Abstract
In accordance with an embodiment, a semiconductor device comprises a semiconductor die, an interposer, and conductive bumps bonding the semiconductor die to the interposer. The semiconductor die comprises a first metallization layer, and the first metallization layer comprises a first conductive pattern. The interposer comprises a second metallization layer, and the second metallization layer comprises a second conductive pattern. Some of the conductive bumps electrically couple the first conductive pattern to the second conductive pattern to form a coil. Other embodiments contemplate other configurations of coils, inductors, and/or transformers, and contemplate methods of manufacture.
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Citations
17 Claims
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1. A semiconductor device comprising:
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a semiconductor die comprising a first metallization layer, the first metallization layer comprising a first conductive pattern, the first conductive pattern being in a first dielectric layer; an interposer comprising a substrate and a second metallization layer on the substrate, the second metallization layer comprising a second conductive pattern, the second conductive pattern being in a second dielectric layer; first conductive bumps on a first side of the interposer and bonding the semiconductor die to the interposer, some of the first conductive bumps electrically coupling the first conductive pattern to the second conductive pattern to form a coil; and second conductive bumps on a second side of the interposer, the second side being opposite the first side. - View Dependent Claims (2, 3, 4, 5, 6, 17)
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7. A structure comprising:
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an interposer comprising; a substrate; a first metallization layer on a first side of the substrate, the first metallization layer comprising a first conductive pattern; a second metallization layer on the first metallization layer, the second metallization layer comprising a second conductive pattern; a third metallization layer on a second side of the substrate, the second side being opposite the first side, the third metallization layer comprising a third conductive pattern; a fourth metallization layer on the third metallization layer, the fourth metallization layer comprising a fourth conductive pattern; and through substrate vias (TSVs) extending through the substrate, wherein at least one TSV electrically couples one of the first conductive pattern and the second conductive pattern to one of the third conductive pattern and the fourth conductive pattern to form a first coil, and at least one other TSV electrically couples one of the first conductive pattern and the second conductive pattern to one of the third conductive pattern and fourth conductive pattern to form a second coil, the first coil being capable of having a first electrical current, the second coil being capable of having a second electrical current at a same time as the first coil has the first electrical current, the first electrical current being distinct from the second electrical current; a first conductive bump over the first side of the substrate, the first conductive bump being electrically coupled to at least one of the first conductive pattern, the second conductive pattern, the third conductive pattern, and the fourth conductive pattern; and a second conductive bump over the second side of the substrate, the second conductive bump being electrically coupled to at least one of the first conductive pattern, the second conductive pattern, the third conductive pattern, and the fourth conductive pattern. - View Dependent Claims (8, 9, 10, 11, 12)
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13. A method for forming a semiconductor device, the method comprising:
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providing a semiconductor die comprising a first substrate and a first dielectric layer over the first substrate, the first dielectric layer having a first conductive pattern in the first dielectric layer; providing an interposer comprising a second substrate and a second dielectric layer over the second substrate, the second dielectric layer having a second conductive pattern in the second dielectric layer; and bonding the semiconductor die to the interposer using conductive bumps, wherein at least one of the conductive bumps electrically couples the first conductive pattern to the second conductive pattern to form a coil. - View Dependent Claims (14, 15, 16)
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Specification