Power semiconductor device and method therefor
First Claim
1. A semiconductor device comprising:
- a semiconductor material including a die;
a mesh structure including a plurality of transistors, wherein each transistor of the plurality of transistors comprises a gate positioned over the semiconductor material, a drain region, and a source region wherein the gates of the plurality of transistors are coupled to each other and are disposed in closed shapes around respective source regions, and wherein the source regions and the drain regions are disposed on opposite sides of the die;
a gate contact coupled to the mesh structure, wherein the gate contact includes a gate interconnection that is disposed external to the mesh structure and that completely surrounds the mesh structure, and wherein the gate contact is coupled to the gates of the plurality of transistors of the mesh structure via one or more gate pathways; and
a dielectric structure extending from a first surface of the semiconductor material into the semiconductor material, wherein the gate contact is disposed over the dielectric structure.
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Accused Products
Abstract
A power transistor includes a plurality of transistor cells. Each transistor cell has a first electrode coupled to a first electrode interconnection region overlying a first major surface, a control electrode coupled to a control electrode interconnection region overlying the first major surface, and a second electrode coupled to a second electrode interconnection region overlying a second major surface. Each transistor cell has an approximately constant doping concentration in the channel region. A dielectric platform is used as an edge termination of an epitaxial layer to maintain substantially planar equipotential lines therein. The power transistor finds particular utility in radio frequency applications operating at a frequency greater than 500 megahertz and dissipating more than 5 watts of power. The semiconductor die and package are designed so that the power transistor can efficiently operate under such severe conditions.
74 Citations
23 Claims
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1. A semiconductor device comprising:
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a semiconductor material including a die; a mesh structure including a plurality of transistors, wherein each transistor of the plurality of transistors comprises a gate positioned over the semiconductor material, a drain region, and a source region wherein the gates of the plurality of transistors are coupled to each other and are disposed in closed shapes around respective source regions, and wherein the source regions and the drain regions are disposed on opposite sides of the die; a gate contact coupled to the mesh structure, wherein the gate contact includes a gate interconnection that is disposed external to the mesh structure and that completely surrounds the mesh structure, and wherein the gate contact is coupled to the gates of the plurality of transistors of the mesh structure via one or more gate pathways; and a dielectric structure extending from a first surface of the semiconductor material into the semiconductor material, wherein the gate contact is disposed over the dielectric structure. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23)
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Specification