×

Power MOSFET contact metallization

  • US 8,471,390 B2
  • Filed: 05/02/2007
  • Issued: 06/25/2013
  • Est. Priority Date: 05/12/2006
  • Status: Active Grant
First Claim
Patent Images

1. A structure comprising:

  • an insulator having a second surface, wherein said second surface is in contact with a first surface of a substrate;

    an electrical contact coupled to said insulator;

    a first barrier layer deposited over and in contact with all surfaces of said insulator except for said second surface, wherein said first barrier layer is also deposited over and in contact with said substrate between said insulator and an adjacent insulator, wherein said first barrier layer is also deposited between and in contact with said electrical contact and said substrate, wherein a substantially even surface is formed by combining a surface of said first barrier layer and a surface of said electrical contact; and

    a semiconductor device formed in said substrate adjacent to and underneath said insulator and entirely isolated physically from said electrical contact and from said first barrier layer by said insulator, said semiconductor device electrically coupled to said electrical contact.

View all claims
  • 5 Assignments
Timeline View
Assignment View
    ×
    ×