Drive circuit of semiconductor device

• US 8,471,622 B2
• Filed: 04/15/2010
• Issued: 06/25/2013
• Est. Priority Date: 04/17/2009
• Status: Expired due to Fees

• Current Assignee: Hitachi, Ltd.
• Original Assignee: Hitachi, Ltd.
• Inventors: Ishikawa, Katsumi, Ogawa, Kazutoshi, Nagasu, Masahiro
• Primary Examiner(s): Donovan, Lincoln
• Assistant Examiner(s): CHENG, DIANA
• Application Number:
  US12/760,742
• Publication Number:
  US 20100265746A1
• Time in Patent Office: 1,167 Days
• Field of Search: 327/108, 327/374, 327/376, 327/377, 327/419, 327/427, 327434-437
• US Class Current: 327/434
• CPC Class Codes: H03K 17/08128 in composite switches
• CPC Class Codes: H03K 17/127 in composite switches
• CPC Class Codes: H03K 17/6877 the control circuit comprising active elements different from those used in the output circuit

Abstract

The invention provides a switching circuit of a power semiconductor device having connected in parallel SiC diodes with a small recovery current, capable of significantly reducing turn-on loss and recovery loss without increasing the noise in the MHz band, and contributing to reducing the loss and noise of inverters. The present invention provides a switching circuit and an inverter circuit of a power semiconductor device comprising a module combining Si-IGBT and SiC diodes, wherein an on-gate resistance is set smaller than an off-gate resistance.

Claims

1. An inverter device comprising:

a power semiconductor switching device;

a freewheeling diode connected in parallel with the power semiconductor switching device, the freewheeling diode comprising a Schottky barrier diode of a wide bandgap semiconductor of SiC, GaN or diamond, a PiN diode, or a MPS diode in which a Schottky barrier diode and a PiN diode are combined; and

a gate drive circuit of the power semiconductor switching device,

wherein an on-gate resistance of the power semiconductor switching device is set smaller than an off-gate resistance thereof,

wherein when a line inductance of the power semiconductor switching device and the gate drive circuit is denoted by L_g, a buried resistance of the power semiconductor switching device is denoted by R_gin, an input capacitance of the power semiconductor switching device is denoted by C_ies, and an on-gate resistance of the power, semiconductor switching device is denoted by R_gon, the following condition is satisfied;

2. An inverter device comprising:

a power semiconductor switching device;

a freewheeling diode connected in parallel with the power semiconductor switching device, the freewheeling diode comprising a Schottky barrier diode of a wide bandgap semiconductor of SiC, GaN or diamond, a PiN diode, or a MPS diode in which a Schottky barrier diode and a PiN diode are combined; and

a gate drive circuit of the power semiconductor switching device,

wherein a first high-voltage side terminal of the power semiconductor switching device and a second high-voltage side terminal of the freewheeling diode are disposed independently, and a first inductance is disposed between the first high-voltage side terminal and the second high-voltage side terminal, and

wherein a first low-voltage side terminal of the power semiconductor switching device and a second low-voltage side terminal of the freewheeling diode are disposed independently, and a second inductance is disposed between the first low-voltage side terminal and the second low-voltage side terminal.

3. The inverter device according to claim 2, wherein when a sum of a parasitic inductance is denoted by L_s, an output capacitance of the power semiconductor switching device and the freewheeling diode is denoted by C_oes, an on resistance of the power semiconductor switching device is denoted by R_{on IGBT}, and an inductance between the high-voltage side terminal of the power semiconductor switching device and the high-voltage side terminal of the freewheeling diode is denoted by L_m, R_{on IGBT} satisfies the following condition:

4. An inverter device comprising:

a power semiconductor switching device;

a freewheeling diode connected in parallel with the power semiconductor switching device, the freewheeling diode comprising a Schottky barrier diode of a wide bandgap semiconductor of SiC, GaN or diamond, a PiN diode, or a MPS diode in which a Schottky barrier diode and a PiN diode are combined; and

a gate drive circuit of the power semiconductor switching device,

wherein a first high-voltage side terminal of the power semiconductor switching device and a second high-voltage side terminal of the freewheeling diode are disposed independently, and a first inductance is disposed between the first high-voltage side terminal and the second high-voltage side terminal, and

wherein when a sum of a parasitic inductance is denoted by L_s, an output capacitance of the power semiconductor switching device and the freewheeling diode is denoted by C_oes, an on resistance of the power semiconductor switching device is denoted by R_{on IGBT}, and an inductance between the high-voltage side terminal of the power semiconductor switching device and the high-voltage side terminal of the freewheeling diode is denoted by L_m, R_{on IGBT} satisfies the following condition;