Sodium species surface treatment of thin film photovoltaic cell and manufacturing method
First Claim
1. A method for forming a thin film photovoltaic device, the method comprising:
- providing a transparent substrate comprising a surface region;
forming a first electrode layer overlying the surface region;
forming a copper layer overlying the first electrode layer;
forming an indium layer overlying the copper layer to form a multi-layered structure;
subjecting at least the multi-layered structure to a thermal treatment process in an environment containing a sulfur bearing species;
forming a copper indium disulfide material from at least the thermal treatment process of the multi-layered structure, the copper indium disulfide material comprising a copper-to-indium atomic ratio ranging from about 1.2;
1 to about 2;
1 and a thickness of substantially copper sulfide material having a copper sulfide surface region, wherein the formed copper indium disulfide is mixed with a copper indium aluminum disulfide or copper indium gallium disulfide;
removing the thickness of the copper sulfide material to expose a surface region having a copper poor surface comprising a copper to indium atomic ratio of less than about 0.95;
1;
subjecting the copper poor surface to a sodium species to convert the copper poor surface from an n-type semiconductor characteristic to a p-type semiconductor characteristic;
subjecting the copper poor surface to a treatment process during a time period associated with the subjecting of the copper poor surface with the sodium species; and
forming a window layer overlying the copper indium disulfide material.
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Abstract
A method for forming a thin film photovoltaic device. The method includes providing a transparent substrate comprising a surface region, forming a first electrode layer overlying the surface region, forming a copper layer overlying the first electrode layer and forming an indium layer overlying the copper layer to form a multi-layered structure. The multi-layered structure is subjected to a thermal treatment process in an environment containing a sulfur bearing species to forming a copper indium disulfide material. The copper indium disulfide material comprising a copper-to-indium atomic ratio ranging from about 1.2:1 to about 2:1 and a thickness of substantially copper sulfide material having a copper sulfide surface region. The thickness of the copper sulfide material is selectively removed to expose a surface region having a copper poor surface comprising a copper to indium atomic ratio of less than about 0.95:1. The method subjects the copper poor surface to a sodium species to convert the copper poor surface from an n-type semiconductor characteristic to a p-type semiconductor characteristic. A window layer is formed overlying the copper indium disulfide material.
222 Citations
15 Claims
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1. A method for forming a thin film photovoltaic device, the method comprising:
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providing a transparent substrate comprising a surface region; forming a first electrode layer overlying the surface region; forming a copper layer overlying the first electrode layer; forming an indium layer overlying the copper layer to form a multi-layered structure; subjecting at least the multi-layered structure to a thermal treatment process in an environment containing a sulfur bearing species; forming a copper indium disulfide material from at least the thermal treatment process of the multi-layered structure, the copper indium disulfide material comprising a copper-to-indium atomic ratio ranging from about 1.2;
1 to about 2;
1 and a thickness of substantially copper sulfide material having a copper sulfide surface region, wherein the formed copper indium disulfide is mixed with a copper indium aluminum disulfide or copper indium gallium disulfide;removing the thickness of the copper sulfide material to expose a surface region having a copper poor surface comprising a copper to indium atomic ratio of less than about 0.95;
1;subjecting the copper poor surface to a sodium species to convert the copper poor surface from an n-type semiconductor characteristic to a p-type semiconductor characteristic; subjecting the copper poor surface to a treatment process during a time period associated with the subjecting of the copper poor surface with the sodium species; and forming a window layer overlying the copper indium disulfide material. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14)
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15. A method for forming a thin film photovoltaic device, the method comprising:
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providing a transparent substrate comprising a surface region; forming a first electrode layer overlying the surface region; forming a chalcopyrite material overlying the electrode layer, the chalcopyrite material comprising at least a copper poor copper indium disulfide material including a copper poor copper indium disulfide material surface, the copper poor copper indium disulfide surface having an atomic ratio of Cu;
In of about 0.99 and less, wherein the chalcopyrite material is mixed with a copper indium aluminum gallium disulfide;compensating the copper poor copper indium disulfide material using a sodium species to change in characteristic from an n-type to a p-type, wherein the sodium species is incorporated subsequently to the formation of the copper-poor, copper indium disulfide material; forming a window layer overlying the chalcopyrite material; and forming a second electrode layer overlying the window layer.
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Specification