Method and structure of sensors and MEMS devices using vertical mounting with interconnections

• US 8,476,129 B1
• Filed: 02/18/2011
• Issued: 07/02/2013
• Est. Priority Date: 05/24/2010
• Status: Active Grant

• Current Assignee: Movella Incorporated (Movella Holdings, Inc.)
• Original Assignee: mCube, Inc.
• Inventors: Wan, Hong, Jensen, Dave Paul, Ewanich, Jon
• Primary Examiner(s): Chaudhuri, Olik
• Assistant Examiner(s): JEAN BAPTISTE, WILNER
• Application Number:
  US13/030,871
• Time in Patent Office: 865 Days
• Field of Search: 438/26, 438/51, 438/64, 438/116
• US Class Current: 438/200
• CPC Class Codes: B81B 3/00 Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes B81B5/00 takes precedence
• CPC Class Codes: H01L 2224/03 Manufacturing methods
• CPC Class Codes: H01L 2224/0401 Bonding areas specifically adapted for bump connectors, e.g. under bump metallisation [UBM]
• CPC Class Codes: H01L 2224/05022 the internal layer being at least partially embedded in the surface
• CPC Class Codes: H01L 2224/05548 Bonding area integrally formed with a redistribution layer on the semiconductor or solid-state body
• CPC Class Codes: H01L 2224/05611 Tin [Sn] as principal constituent
• CPC Class Codes: H01L 2224/05639 Silver [Ag] as principal constituent
• CPC Class Codes: H01L 2224/05644 Gold [Au] as principal constituent
• CPC Class Codes: H01L 2224/05647 Copper [Cu] as principal constituent
• CPC Class Codes: H01L 2224/10175 Flow barriers
• CPC Class Codes: H01L 2224/11 Manufacturing methods
• CPC Class Codes: H01L 2224/1145 Physical vapour deposition [PVD], e.g. evaporation, or sputtering
• CPC Class Codes: H01L 2224/13082 Two-layer arrangements
• CPC Class Codes: H01L 2224/13111 Tin [Sn] as principal constituent
• CPC Class Codes: H01L 2224/13139 Silver [Ag] as principal constituent
• CPC Class Codes: H01L 2224/13144 Gold [Au] as principal constituent
• CPC Class Codes: H01L 2224/13147 Copper [Cu] as principal constituent
• CPC Class Codes: H01L 2224/16105 the bump connector connecting bonding areas being not aligned with respect to each other
• CPC Class Codes: H01L 2224/16238 the bump connector connecting to a bonding area protruding from the surface of the item
• CPC Class Codes: H01L 2224/24051 Conformal with the semiconductor or solid-state device
• CPC Class Codes: H01L 2224/24226 : the HDI interconnect connecting to the same level of the item at which the semiconductor or solid-state body is mounted, e.g. the item being planar
• CPC Class Codes: H01L 2224/81191 : wherein the bump connectors are disposed only on the semiconductor or solid-state body
• CPC Class Codes: H01L 2224/81193 : wherein the bump connectors are disposed on both the semiconductor or solid-state body and another item or body to be connected to the semiconductor or solid-state body
• CPC Class Codes: H01L 2224/8121 : using a reflow oven
• CPC Class Codes: H01L 2224/8123 : Polychromatic or infrared lamp heating
• CPC Class Codes: H01L 2224/81815 : Reflow soldering
• CPC Class Codes: H01L 2224/94 : at wafer-level, i.e. with connecting carried out on a wafer comprising a plurality of undiced individual devices
• CPC Class Codes: H01L 24/05 : of an individual bonding area
• CPC Class Codes: H01L 24/13 : of an individual bump connector
• CPC Class Codes: H01L 24/16 : of an individual bump connector
• CPC Class Codes: H01L 24/24 : of an individual high density interconnect connector
• CPC Class Codes: H01L 24/81 : using a bump connector
• CPC Class Codes: H01L 2924/00 : Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00014 : the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01047 : Silver [Ag]
• CPC Class Codes: H01L 2924/12042 : LASER
• CPC Class Codes: H01L 2924/1461 : MEMS

Abstract

A method and structure for fabricating sensor(s) or electronic device(s) using vertical mounting with interconnections. The method includes providing a resulting device including at least one sensor or electronic device, formed on a die member, having contact region(s) with one or more conductive materials formed thereon. The resulting device can then be singulated within a vicinity of the contact region(s) to form one or more singulated dies, each having a singulated surface region. The singulated die(s) can be coupled to a substrate member, having a first surface region, such that the singulated surface region(s) of the singulated die(s) are coupled to a portion of the first surface region. Interconnections can be formed between the die(s) and the substrate member with conductive adhesives, solder processes, or other conductive bonding processes.

Claims

1. A method for fabricating integrated sensors or electronic devices, the method comprising:

providing a die member having a first surface region, the die member having at least one sensor or electronic device, the sensor(s) or electronic device(s) having at least one contact region;

forming at least one first conductive material overlying at least a portion of the contact region(s) of the sensor(s) or electronic device(s);

forming at least one second conductive material overlying at least a portion of the first conductive material to form a resulting die;

singulating the resulting die within a vicinity of the contact region(s) of the die member to form at least one singulated die, the one or more singulated dice each having at least one singulated surface region;

providing a substrate member having a second surface region, the substrate member having at least one contact region; and

coupling at least one singulated die to the substrate member to form at least one vertically mounted device, wherein the singulated surface region of each singulated die is coupled to the second surface region, the second conductive material(s) is electrically coupled to the contact region(s) of the substrate member.

2. The method of claim 1 further comprising forming at least one solder material overlying at least a portion of the second conductive material(s).

3. The method of claim 2 wherein the solder material(s) comprise tin (Sn), silver (Ag), or a tin-silver alloy (SnAg).

4. The method of claim 2 further comprising subjecting the vertically mounted device(s) to a solder reflow process.

5. The method of claim 2 further comprising forming at least one third conductive material overlying at least a portion of the contact region(s) of the substrate member.

6. The method of claim 5 wherein the third conductive material(s) comprise silver-filled epoxies, interposers, redistribution layers (RDL), or metal bumps.

7. The method of claim 1 wherein the sensor(s) or electronic device(s) are selected from a group consisting of:

CMOS integrated circuit devices, MEMS device(s), magneto-resistive device(s), or integrated MEMS-CMOS device(s).

8. The method of claim 1 wherein the sensor(s) or electronic device(s) are selected from a group consisting of:

anisotropic magneto-resistive (AMR), ordinary magneto-resistive (OMR), giant magneto-resistive (GMR), or tunnel junction magneto-resistive (TMR) device(s).

9. The method of claim 1 wherein the first conductive material(s) comprise silver-filled epoxies, interposers, redistribution layers (RDLs), or metal bumps.

10. A method for fabricating integrated sensors or electronic devices, the method comprising:

providing a die member having a first surface region, the die member having at least one sensor or electronic device, the sensor(s) or electronic device(s) having a plurality of bond pads;

forming a redistribution layer (RDL) overlying at least a portion of the bonds pads;

forming one or more first metal bumps overlying at least a portion of the RDL;

forming one or more solder materials overlying at least a portion the metal bump(s) to form a resulting die;

singulating the resulting die within a vicinity of the bond pads to form at least one singulated die, the one or more singulated dice each having at least one singulated surface region;

providing a substrate member having a second surface region, the substrate member having a plurality of metalized pads;

forming one or more second metal bumps overlying at least a portion of the metalized pads;

disposing the singulated die in a vertical orientation with respect to the substrate member to form at least one vertically mounted device, wherein the singulated surface region of the singulated die is coupled to the second surface region, and wherein the one or more first metal bumps and the one or more solder materials are coupled to the metalized pads; and

subjecting the one or more vertically mounted devices to a solder reflow process.

11. The method of claim 10 wherein the one or more first metal bumps include metal materials selected from a group consisting of:

copper (Cu), gold (Au), silver (Ag), and tin (Sn).

12. The method of claim 10 wherein a sensor is selected from a group consisting of:

CMOS integrated circuit device(s), MEMS device(s), magneto-resistive device(s), or integrated MEMS-CMOS device(s).

13. The method of claim 10 wherein a sensor is selected from a group consisting of:

anisotropic magneto-resistive (AMR), ordinary magneto-resistive (OMR), giant magneto-resistive (GMR), or tunnel junction magneto-resistive (TMR) device(s).