Active pixel with precharging circuit

• US 8,476,567 B2
• Filed: 09/22/2008
• Issued: 07/02/2013
• Est. Priority Date: 09/22/2008
• Status: Active Grant

• Current Assignee: Semiconductor Components Industries LLC (ON Semiconductor Corporation)
• Original Assignee: Semiconductor Components Industries LLC (ON Semiconductor Corporation)
• Inventors: De Wit, Yannick, Walschap, Tom
• Primary Examiner(s): Sohn, Seung C
• Application Number:
  US12/284,491
• Publication Number:
  US 20100072350A1
• Time in Patent Office: 1,744 Days
• Field of Search: 250/208.1, 250/214.R, 250/214.1, 327/514, 327/515, 327/437, 257290-292
• US Class Current: 250/208.1
• CPC Class Codes: H04N 25/771 comprising storage means other than floating diffusion

Abstract

An active pixel including a precharge circuit for a sample and hold (S/H) stage and methods of operating the same are provided. In addition to the precharge circuit and S/H stage, the pixel may include a sensor circuit to generate a signal in response to electromagnetic radiation received on a photodetector included therein, and a multiplexer circuit. The S/H stage may include a switching-element to couple the signal from the sensor circuit to a capacitor element in the S/H stage to read-out and store the signal. The multiplexer circuit may include a switching-element coupled to an output node of the capacitor element to couple the signal to a column. The precharge circuit may include a switching-element coupled between the output node of the capacitor element and the column to precharge the capacitor element to a fixed voltage applied to the column when the S/H stage is not reading-out the signal.

Claims

1. An active pixel comprising:

a sensor circuit to generate a signal in response to electromagnetic radiation received on a photodetector included therein;

a sample and hold (S/H) stage coupled to an output of the sensor circuit to read-out and store the signal, the S/H stage including a sample switching-element to couple the signal from the sensor circuit to a capacitor element in the S/H stage to store the signal;

a buffer/multiplexer circuit including a row-select switching-element coupled to an output node of the capacitor element to couple the signal to a column; and

a precharge circuit including a precharge switching-element coupled between the output node of the capacitor element and the column to precharge the capacitor element to a precharge voltage applied to the column when the S/H stage is not reading-out the signal from the sensor circuit.

2. An active pixel according to claim 1, wherein the precharge switching-element comprises a precharge transistor having a drain coupled to the output node of the capacitor element and a source coupled to the column.

3. An active pixel according to claim 2, wherein the row-select switching-element comprises a row-select transistor having a drain coupled to the output node of the capacitor element through a buffer and a source coupled to the column, and wherein the source of the row-select transistor and the source of the precharge transistor comprise a shared source implant.

4. An active pixel according to claim 2, wherein the active pixel is one of a plurality of pixels in an array of pixels.

5. An active pixel according to claim 4, wherein the precharge transistor shares a source implant with a row-select transistor in an adjacent pixel in the array of pixels.

6. An active pixel according to claim 1, wherein the sample switching-element comprises an input node coupled to the output of the sensor circuit and a second output node coupled to the output node of the capacitor element, and wherein the precharge switching-element couples to the output node of the capacitor element through the sample switching-element.

7. An active pixel according to claim 6, wherein the sensor circuit further includes a reset switching-element and a source follower amplifier (SF) through which the sensor circuit is coupled to the S/H stage, and wherein the SF decouples the sensor circuit from the S/H stage when a reset signal is applied to the reset switching-element to enable the capacitor-element to be precharged through the sample switching-element and the precharge switching-element.

8. An active pixel according to claim 6, wherein the precharge switching-element does not couple to the output node of the capacitor element through the sample switching-element, and wherein the sample switching-element decouples the capacitor element from the sensor circuit to enable the capacitor-element to be precharged through the precharge switching-element.

9. An image sensor including an array of a plurality of active pixels, at least one of the plurality of active pixels comprising:

a sensor circuit to generate a signal in response to electromagnetic radiation received on a photodetector included therein;

a sample and hold (S/H) stage coupled to an output of the sensor circuit to read-out and store the signal, the S/H stage including a sample switching-element to couple the signal from the sensor circuit to a capacitor element in the S/H stage to store the signal;

a buffer/multiplexer circuit including a row-select switching-element coupled to an output node of the capacitor element to couple the signal to a column in the array; and

a precharge circuit including a precharge switching-element coupled between the output node of the capacitor element and the column to precharge the capacitor element to a column precharge voltage applied to the column when the S/H stage is not reading-out the signal therefrom.

10. An image sensor according to claim 9, wherein the precharge switching-element comprises a precharge transistor having a drain coupled to the output node of the capacitor element and a source coupled to the column.

11. An image sensor according to claim 10, wherein the row-select switching-element comprises a row-select transistor having a drain coupled to the output node of the capacitor element through a buffer and a source coupled to the column, and wherein the source of the row-select transistor and the source of the precharge transistor comprise a shared implant region.

12. An image sensor according to claim 11, wherein the precharge transistor shares source with the row-select transistor in an adjacent active pixel in the array of a plurality of active pixels to couple to a column in the adjacent active pixel.

13. An image sensor according to claim 10, further comprising a column high voltage switching element to apply a fixed high voltage to the column during read-out to reduce drain-source leakage through the precharge transistor from the capacitor element.

14. An image sensor according to claim 9, wherein the sample switching-element comprises an input node coupled to the output of the sensor circuit and a second output node coupled to the output node of the capacitor element, and wherein the precharge switching-element couples to the output node of the capacitor element through the sample switching-element.

15. An image sensor according to claim 14, wherein the sensor circuit further includes a reset switching-element and a source follower amplifier (SF) through which the sensor circuit is coupled to the S/H stage, and wherein the SF decouples the sensor circuit from the S/H stage when a reset signal is applied to the reset switching-element to enable the capacitor element to be precharged through the sample switching-element and the precharge switching-element.

16. A method for precharging a capacitor element in an in-pixel sample and hold (S/H) stage of an active pixel, the method comprising:

electrically decoupling a sensor circuit in the active pixel from the S/H stage;

electrically coupling an output node of the capacitor element to a column through a precharge transistor, the precharge transistor having a drain coupled to the output node of the capacitor element and a source coupled to the column; and

applying a precharge voltage to the column to precharge the capacitor element and the column.

17. A method according to claim 16, wherein the active pixel further comprises a row-select transistor having a drain coupled to the output node of the capacitor element through a buffer and a source coupled to the column, and wherein the source of the row-select transistor comprises a source implant shared with the source of the precharge transistor.

18. A method according to claim 16, wherein the active pixel is one of a plurality of pixels in an array of pixels, and wherein the precharge transistor shares a source implant with a row-select transistor in an adjacent pixel in the array of pixels to couple to a column in the adjacent pixel.

19. A method according to claim 16, wherein the S/H stage further comprises a sample transistor through which the sensor circuit is coupled to the output node of the capacitor element, and wherein the precharge transistor couples to the output of the capacitor element through the sample transistor.

20. A method according to claim 16, further comprising applying a fixed high voltage to the column after precharging the capacitor element to decrease leakage through the precharge transistor during readout of the sensor circuit by the S/H stage.