Plasma CVD apparatus

• US 8,476,638 B2
• Filed: 07/17/2012
• Issued: 07/02/2013
• Est. Priority Date: 08/25/2009
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Toriumi, Satoshi, Tajima, Ryota, Ohtsuki, Takashi, Tanaka, Tetsuhiro, Tokumaru, Ryo, Ichijo, Mitsuhiro, Kuriki, Kazutaka, Yokoi, Tomokazu, Endo, Toshiya, Yamazaki, Shunpei
• Primary Examiner(s): DANG, PHUC T
• Application Number:
  US13/550,776
• Publication Number:
  US 20120304932A1
• Time in Patent Office: 350 Days
• Field of Search: 257/E21.09, 257/72, 438/488
• US Class Current: 257/72
• CPC Class Codes: C23C 16/24 Deposition of silicon only
• CPC Class Codes: C23C 16/45565 Shower nozzles
• CPC Class Codes: C23C 16/45574 Nozzles for more than one gas
• CPC Class Codes: C23C 16/5096 Flat-bed apparatus
• CPC Class Codes: H01J 37/3244 Gas supply means
• CPC Class Codes: H01J 37/32449 Gas control, e.g. control of the gas flow
• CPC Class Codes: H01J 37/32541 Shape
• CPC Class Codes: H01J 37/32834 Exhausting
• CPC Class Codes: H01L 21/0262 Reduction or decomposition of gaseous compounds, e.g. CVD
• CPC Class Codes: H01L 29/66765 Lateral single gate single channel transistors with inverted structure, i.e. the channel layer is formed after the gate
• CPC Class Codes: H01L 29/78696 characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel H01L29/78612 takes precedence; transistors having a drain offset region or a lightly doped drain [LDD] H01L29/78621

Abstract

An object of the present invention is to provide a technique for manufacturing a dense crystalline semiconductor film without a cavity between crystal grains. A plasma region is formed between a first electrode and a second electrode by supplying high-frequency power of 60 MHz or less to the first electrode under a condition where a pressure of a reactive gas in a reaction chamber of a plasma CVD apparatus is set to 450 Pa to 13332 Pa, and a distance between the first electrode and the second electrode of the plasma CVD apparatus is set to 1 mm to 20 mm; crystalline deposition precursors are formed in a gas phase including the plasma region; a crystal nucleus of 5 nm to 15 nm is formed by depositing the deposition precursors; and a microcrystalline semiconductor film is formed by growing a crystal from the crystal nucleus.

Claims

1. A plasma CVD apparatus comprising:

a reaction chamber; and

a first electrode and a second electrode facing each other in the reaction chamber, wherein a substrate is configured to be placed over the second electrode,

wherein the first electrode comprises;

a plurality of projected portions for forming glow discharge plasma in the reaction chamber; and

a plurality of gas supply ports provided around each of the plurality of projected portions, and

wherein the plurality of projected portions has a tapered shape and is chamfered.

2. The plasma CVD apparatus according to claim 1, wherein each of the projected portions has a polygonal pyramid shape.

3. The plasma CVD apparatus according to claim 1, wherein each of the projected portions has a cone shape.

4. A plasma CVD apparatus comprising:

a reaction chamber; and

a first electrode and a second electrode facing each other in the reaction chamber, wherein a substrate is configured to be placed over the second electrode,

wherein the first electrode comprises;

a plurality of projected portions for forming glow discharge plasma in the reaction chamber; and

a plurality of gas supply ports provided on apexes of the plurality of projected portions, and

wherein the plurality of projected portions has a tapered shape and is chamfered.

5. The plasma CVD apparatus according to claim 4, wherein each of the projected portions has a polygonal pyramid shape.

6. The plasma CVD apparatus according to claim 4, wherein each of the projected portions has a cone shape.

7. A plasma CVD apparatus comprising:

a reaction chamber; and

an upper electrode and a lower electrode facing each other in the reaction chamber, wherein a substrate is configured to be placed over the lower electrode,

wherein the upper electrode comprises;

a plurality of projected portions for forming glow discharge plasma in the reaction chamber;

a plurality of first gas supply ports provided on apexes of the plurality of projected portions; and

a plurality of second gas supply ports provided around each of the plurality of projected portions, and

wherein the plurality of projected portions has a tapered shape and is chamfered.

8. The plasma CVD apparatus according to claim 7, wherein each of the projected portions has a polygonal pyramid shape.

9. The plasma CVD apparatus according to claim 7, wherein each of the projected portions has a cone shape.

10. A plasma CVD apparatus comprising:

a reaction chamber; and

a first electrode and a second electrode facing each other in the reaction chamber, wherein a substrate is configured to be placed over the second electrode,

wherein the first electrode comprises;

projected portions for forming glow discharge plasma in the reaction chamber; and

gas supply ports,

wherein the projected portions and the gas supply ports are arranged alternately, and

wherein the projected portions have a tapered shape and are chamfered.

11. The plasma CVD apparatus according to claim 10, wherein each of the projected portions has a polygonal pyramid shape.

12. The plasma CVD apparatus according to claim 10, wherein each of the projected portions has a cone shape.

13. The plasma CVD apparatus according to claim 10, wherein the first electrode further comprises gas supply ports on apexes of the projected portions.

14. A plasma CVD apparatus comprising:

a reaction chamber; and

a first electrode and a second electrode facing each other in the reaction chamber, wherein a substrate is configured to be placed over the second electrode,

wherein the first electrode comprises;

a plurality of projected portions for forming glow discharge plasma in the reaction chamber; and

a plurality of gas supply ports provided around each of the plurality of projected portions.

15. A plasma CVD apparatus comprising:

a reaction chamber; and

a first electrode and a second electrode facing each other in the reaction chamber, wherein a substrate is configured to be placed over the second electrode,

wherein the first electrode comprises;

a plurality of projected portions for forming glow discharge plasma in the reaction chamber; and

a plurality of gas supply ports provided on apexes of the plurality of projected portions.

16. A plasma CVD apparatus comprising:

a reaction chamber; and

an upper electrode and a lower electrode facing each other in the reaction chamber, wherein a substrate is configured to be placed over the lower electrode,

wherein the upper electrode comprises;

a plurality of projected portions for forming glow discharge plasma in the reaction chamber;

a plurality of first gas supply ports provided on apexes of the plurality of projected portions; and

a plurality of second gas supply ports provided around each of the plurality of projected portions.