Semiconductor light emitting component and method for manufacturing the same

• US 8,476,663 B2
• Filed: 05/06/2011
• Issued: 07/02/2013
• Est. Priority Date: 09/01/2010
• Status: Active Grant

• Current Assignee: NCKU Research & Development Foundation, Phostek, Inc.
• Original Assignee: Phostek, Inc.
• Inventors: Horng, Ray-Hua, Lu, Yi-An
• Primary Examiner(s): Malswma, Lex
• Application Number:
  US13/102,350
• Publication Number:
  US 20120049218A1
• Time in Patent Office: 788 Days
• Field of Search: 257/E33.072
• US Class Current: 257/98
• CPC Class Codes: H01L 27/153 in a repetitive configuration, e.g. LED bars
• CPC Class Codes: H01L 33/0093 Wafer bonding; Removal of the growth substrate
• CPC Class Codes: H01L 33/20 with a particular shape, e.g. curved or truncated substrate
• CPC Class Codes: H01L 33/22 Roughened surfaces, e.g. at the interface between epitaxial layers
• CPC Class Codes: H01L 33/38 with a particular shape
• CPC Class Codes: H01L 33/405 Reflective materials
• CPC Class Codes: H01L 33/46 Reflective coating, e.g. dielectric Bragg reflector
• CPC Class Codes: H01L 33/60 Reflective elements

Abstract

A method for manufacturing a semiconductor light emitting component is disclosed in the present invention. First, a substrate is provided and an epitaxial structure is formed thereon, wherein a first surface of the epitaxial structure contacts the substrate. The epitaxial structure includes a first type doped layer, a light emitting portion and a second type doped layer. A first electrode is then formed on a second surface of the first type doped layer. Subsequently, a functional structure is formed on the first electrode using an in-situ method. Afterwards, the substrate is removed to expose the epitaxial structure. Finally, an etching step is performed to etch the exposed epitaxial structure, so as to expose at least a portion of the first electrode.

Claims

1. A semiconductor light emitting component, comprising:

an epitaxial structure comprising a first type doped layer, a light emitting portion and a second type doped layer;

a first electrode formed on a surface of said first type doped layer;

a second electrode formed on a surface of said second type doped layer;

a functional structure formed on said first electrode using an in-situ method; and

a first cutout structure formed in said first type doped layer to expose at least a portion of the first electrode; and

a second cutout structure formed in said first type doped layer, said light emitting portion and said second type doped layer so as to expose at least a portion of said second electrode.

2. The semiconductor light emitting component of claim 1, wherein said first type doped layer is an n-type layer and said second type doped layer is a p-type layer.

3. The semiconductor light emitting component of claim 1, wherein said first type doped layer is a p-type layer and said second type doped layer is an n-type layer.

4. The semiconductor light emitting component of claim 1, wherein said functional structure comprises:

an insulating layer formed on said first electrode using the in-situ method;

a reflective layer formed on said insulating layer using the in-situ method;

a seed layer formed on said reflective layer using the in-situ method; and

a permanent layer formed on said seed layer using the in-situ method.

5. The semiconductor light emitting component of claim 1, wherein said functional structure comprises:

an insulating layer formed on said first electrode using the in-situ method;

a reflective layer formed on said insulating layer using the in-situ method; and

a permanent layer formed on said reflective layer using the in-situ method.

6. The semiconductor light emitting component of claim 1, wherein said functional structure comprises:

an insulating reflective layer formed on said first electrode using the in-situ method; and

a permanent layer formed on said insulating reflective layer using the in-situ method.

7. A light emitting component, comprising:

an epitaxial structure comprising a first doped layer, a light emitting portion and a second doped layer;

a first electrode formed on a surface of said first doped layer;

a functional structure formed on said first electrode;

a first cutout structure formed in said first doped layer to expose at least a portion of said first electrode;

a second electrode formed on a surface of said second doped layer; and

a second cutout structure formed in said first doped layer, said light emitting portion and said second type doped layer so as to expose at least a portion of said second electrode;

wherein said light emitting component provides ultra-low shade effects.

8. The light emitting component of claim 7, wherein said functional structure further comprises:

an insulating reflective layer formed on said first electrode using the in-situ method; and

a permanent layer formed on said insulating reflective layer using the in-situ method.

9. The light emitting component of claim 8, wherein said functional structure further comprises:

a reflective layer formed on said insulating layer using the in-situ method; and

a seed layer formed on said reflective layer using the in-situ method.