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Corner layout for superjunction device

  • US 8,476,698 B2
  • Filed: 02/19/2010
  • Issued: 07/02/2013
  • Est. Priority Date: 02/19/2010
  • Status: Active Grant
First Claim
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1. A method for layout design of a superjunction device, the method comprising:

  • a) determining dose Qimp of first conductivity type dopants to be doped per unit area in active cell column structures of an active cell region formed in a doped layer of the superjunction device and in termination column structures of a termination region formed in the doped layer and surrounding the active cell region, wherein the doped layer is characterized by a thickness t and a dopant density M of second conductivity type dopants per unit volume of an opposite charge type to the first conductivity type dopants;

    b) configuring a layout of the active cell column structures so that a charge due to the first conductivity type dopants balances out charge due to the second conductivity type dopants in the doped layer in the active cell region; and

    c) configuring a corner layout of end portions of the active cell column structures proximate the termination column structures so that a charge due to the first conductivity type dopants in the end portions and a charge due to the first conductivity type dopants in the termination column structures balances out charge due to the second conductivity type dopants in a corner region of the superjunction device, wherein configuring a corner layout of the end portions includes adjusting a configuration of a layout of end portions of active cell column structures proximate a corner of the termination column structures to take into account a curvature of the corner, wherein adjusting the configuration of the layout of the end portions includes dividing a portion of the doped layer proximate the corner into one or more regions of area A and laying out the end portions of the active cell column structures at the corner such that each of the one or more regions of area A includes an area A1 containing termination column and/or active cell column structures of first conductivity type dopants such that, for each of the one or more regions of area A, A1/A is equal to a predetermined value, wherein the layout of the end portions of one or more of the active cell column structures proximate the corner includes a hooked portion, wherein the hooked portion bends toward a side closest to a center of a die on which the superjunction device is formed.

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