Plasma processing apparatus

• US 8,480,848 B2
• Filed: 11/15/2006
• Issued: 07/09/2013
• Est. Priority Date: 11/29/2005
• Status: Active Grant

• Current Assignee: Tokyo Electron Limited
• Original Assignee: Tokyo Electron Limited
• Inventors: Tian, Caizhong, Nishizuka, Tetsuya, Nozawa, Toshihisa
• Primary Examiner(s): DHINGRA, RAKESH KUMAR
• Application Number:
  US12/095,262
• Publication Number:
  US 20090242130A1
• Time in Patent Office: 2,428 Days
• Field of Search: 118/723.MW, 118/723.R, 118/723.ME, 118/723.MR, 156/345.41, 156/345.35, 156/345.36
• US Class Current: 156/345.41
• CPC Class Codes: H01J 37/32192 Microwave generated discharge H01J37/32357, H01J37/32366, H01J37/32394, H01J37/32403 take precedence
• CPC Class Codes: H01J 37/3222 Antennas
• CPC Class Codes: H01J 37/3244 Gas supply means
• CPC Class Codes: H05H 1/46 using applied electromagnetic fields, e.g. high frequency or microwave energy H05H1/26 takes precedence

Abstract

The present invention relates to a plasma processing apparatus including: a processing chamber whose ceiling portion is opened and the inside thereof can be evacuated to vacuum; a ceiling plate which is made of dielectric material and is airtightly mounted to an opening of the ceiling portion; a planar antenna member which is installed on a top surface of the ceiling plate, for introducing a microwave into the processing chamber; and a coaxial waveguide, which has a central conductor connected to the planar antenna member, for supplying the microwave, wherein a gas passage is formed to pass through the central conductor, the planar antenna member, and the ceiling plate, and an electric field attenuating recess for attenuating an electric field intensity of the center portion of the ceiling plate is installed on a top surface of a center area of the ceiling plate.

Claims

1. A plasma processing apparatus comprising:

a processing chamber whose ceiling portion is opened and the inside thereof can be evacuated to vacuum;

a substrate holder, installed in the processing chamber, for mounting a substrate to be processed;

a ceiling plate which is made of a microwave transmissive dielectric material and is airtightly mounted to an opening of the ceiling portion;

a planar antenna member, which is installed on a top surface of the ceiling plate, for introducing a microwave into the processing chamber; and

a coaxial waveguide, which has a central conductor connected to a center portion of the planar antenna member, for supplying the microwave,

wherein an electric field attenuating recess is formed on a top surface of a center area of the ceiling plate, and

a gas passage is formed in the central conductor to pass through the planar antenna member,

wherein a diameter of the electric field attenuating recess is determined to cancel horizontal microwaves transmitted into the electric field attenuating recess in a horizontal direction by canceling the horizontal microwaves having directions opposite to each other, and

a depth of the electric field attenuating recess is determined to cancel vertical microwaves transmitted into the electric field attenuating recess in a vertical direction by canceling the vertical microwaves having directions opposite to each other, thereby attenuating an electric field intensity at a center portion of the ceiling plate until the electric field intensity at the center portion of the ceiling plate becomes substantially zero.

2. The plasma processing apparatus of claim 1, wherein a plate-shaped slow wave member for shortening a wavelength of the microwave is installed on a top surface of the planar antenna member.

3. The plasma processing apparatus of claim 2, wherein the electric field attenuating recess is formed in a cylinder shape,

a diameter D1 of the electric field attenuating recess is an integer multiple of ½

of a wavelength λ

in the slow wave member of the microwave, and a depth H1 of the electric field attenuating recess is an odd number multiple of ¼

of the wavelength λ

.

4. The plasma processing apparatus of claim 1, wherein a porous member for diffusing a gas into the processing chamber is installed near a gas outlet of the gas passage.

5. The plasma processing apparatus of claim 1, wherein a front end portion of the central conductor is extended to the top surface of the ceiling plate through the center portion of the planar antenna member, and

a sealing member is interposed between the front end portion of the central conductor and the top surface of the ceiling plate.

6. The plasma processing apparatus of claim 1, wherein a frequency of the microwave is about 2.45 GHz and a diameter of the gas passage is at least about 16 mm.

7. The plasma processing apparatus of claim 1, wherein a supplementary gas introducing unit having a gas introducing nozzle installed through a sidewall of the processing chamber is installed.

8. A plasma processing apparatus comprising:

a processing chamber whose ceiling portion is opened and the inside thereof can be evacuated to vacuum;

a substrate holder, installed in the processing chamber, for mounting a substrate to be processed;

a ceiling plate which is made of a microwave transmissive dielectric material and is airtightly mounted to an opening of the ceiling portion;

a planar antenna member, which is installed on a top surface of the ceiling plate, for introducing a microwave into the processing chamber; and

a coaxial waveguide, which has a central conductor connected to the planar antenna member, for supplying the microwave,

wherein an electric field attenuating recess is formed on a top surface of the ceiling plate, and

a gas passage is formed in the central conductor to pass through the planar antenna member,

wherein a diameter of the electric field attenuating recess is determined to cancel horizontal microwaves transmitted into the electric field attenuating recess in a horizontal direction by canceling the horizontal microwaves having directions opposite to each other, and

a depth of the electric field attenuating recess is determined to cancel vertical microwaves transmitted into the electric field attenuating recess in a vertical direction by canceling the vertical microwaves having directions opposite to each other, thereby attenuating an electric field intensity at a portion of the ceiling plate corresponding to the installation position of the electric field attenuating recess until the electric field intensity at the portion of the ceiling plate becomes substantially zero.