Method of forming organic electronic devices

• US 8,481,104 B2
• Filed: 12/29/2005
• Issued: 07/09/2013
• Est. Priority Date: 12/30/2004
• Status: Active Grant

• Current Assignee: LG Chem Limited (LG Corporation)
• Original Assignee: E. I. du Pont de Nemours and Company (Corteva, Inc.)
• Inventors: Srdanov, Gordana, Yu, Gang
• Primary Examiner(s): Talbot, Brian K
• Application Number:
  US11/794,604
• Publication Number:
  US 20100233383A1
• Time in Patent Office: 2,749 Days
• Field of Search: 427/64, 427/74, 427/77, 427/430.1
• US Class Current: 427/64
• CPC Class Codes: H10K 71/12 using liquid deposition, e.g. spin coating
• CPC Class Codes: H10K 71/15 characterised by the solvent used
• CPC Class Codes: H10K 85/1135 Polyethylene dioxythiophene [PEDOT]; Derivatives thereof
• CPC Class Codes: H10K 85/626 containing more than one polycyclic condensed aromatic rings, e.g. bis-anthracene
• CPC Class Codes: Y02E 10/549 Organic PV cells

Abstract

Disclosed are methods of fabricating an organic electronic device, which includes dip coating layers, and the devices made therefrom.

Claims

1. A method of depositing a buffer layer and a light emitting layer for an organic electronic device, comprising:

cleaning a workpiece until a water contact angle of a surface of the workpiece is less than 10 degrees;

dip-coating the cleaned workpiece into a liquid medium comprising a buffer layer material, wherein the viscosity of the liquid medium is from about 1 cP to about 20 cP;

drying the workpiece and;

dip-coating the buffer-coated workpiece into a liquid medium comprising a light emitting layer material, wherein the viscosity of the liquid medium is from about 1 cP to about 20 cP,

wherein the buffer layer and light emitting layer each have a thickness in the range of from about 10 nm to about 300 nm.

2. The method of claim 1, wherein the dip-coating of the workpiece into each liquid medium comprises selecting a withdrawal rate to provide the buffer layer and light emitting layer in a range of about 10 nm to about 300 nm in thickness.

3. The method of claim 2, wherein the withdrawal rate is about 0.2 mm/min to about 400 mm/min, or about 1 mm/min to about 25 mm/min.

4. The method of claim 1, wherein the workpiece is cleaned until a water contact angle is less than or equal to about 8 degrees, or wherein the substrate is cleaned until a water contact angle is less than or equal to about 5 degrees.

5. The method of claim 1, further comprising:

treating a portion of the workpiece to make it non-wettable wherein the buffer layer and light emitting layer material does not deposit on the non-wettable portion, thereby creating a pattern.

6. The method of claim 5, wherein the treating is with fluorine containing plasma.

7. The method of claim 5, wherein the dip-coating of the workpiece into each liquid medium comprises selecting a withdrawal rate to provide the buffer layer and light emitting layer in a range of about 10 nm to about 300 nm in thickness.

8. The method of claim 7, wherein the withdrawal rate is about 0.2 mm/min to about 400 mm/min, or about 1 mm/min to about 25 mm/min.