Active matrix substrate manufacturing method and liquid crystal display device manufacturing method

• US 8,481,351 B2
• Filed: 12/16/2009
• Issued: 07/09/2013
• Est. Priority Date: 12/19/2008
• Status: Expired due to Fees

• Current Assignee: Sharp Kabushiki Kaisha (Hon Hai Precision Industry Co., Ltd.)
• Original Assignee: Sharp Kabushiki Kaisha (Hon Hai Precision Industry Co., Ltd.)
• Inventors: Kawasaki, Kiyohiro
• Primary Examiner(s): BOOTH, RICHARD A
• Application Number:
  US13/139,732
• Publication Number:
  US 20110250713A1
• Time in Patent Office: 1,301 Days
• Field of Search: 438151-166, 257/E21.561
• US Class Current: 438/30
• CPC Class Codes: G02F 1/134363 for applying an electric field parallel to the substrate, i.e. in-plane switching [IPS]
• CPC Class Codes: G02F 1/136286 Wiring, e.g. gate line, drain line
• CPC Class Codes: G02F 1/13629 Multilayer wirings
• CPC Class Codes: G02F 1/136295 Materials; Compositions; Manufacture processes
• CPC Class Codes: G02F 1/1368 in which the switching element is a three-electrode device G02F1/136277 takes precedence
• CPC Class Codes: H01L 27/124 with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits wiring structures per se H01L23/52
• CPC Class Codes: H01L 27/1288 employing particular masking sequences or specially adapted masks, e.g. half-tone mask
• CPC Class Codes: H01L 29/458 for thin film silicon, e.g. source or drain electrode
• CPC Class Codes: H01L 29/4908 for thin film semiconductor, e.g. gate of TFT

Abstract

Provided is an active matrix substrate manufacturing method, including the steps of: selectively forming a laminated structure pattern, by forming the laminated structure on a glass substrate (2), by forming a first photosensitive resin pattern (PR) on the laminated structure, and by selectively forming the laminated structure pattern using the first photosensitive resin pattern (PR), the laminated structure including a metal layer (a scanning signal line (11) material), a gate insulative layer (30), and a semiconductor layer (31, 33) (transistor material); fluorinating a surface of the first photosensitive resin pattern (PR) by dry-etching with fluorine gas; applying a coating-type transparent insulative resin (60) onto the glass substrate (2) to fill a space in the laminated structure pattern; and removing the fluorinated first photosensitive resin pattern (PR). This enables to form, in an active matrix substrate manufacturing process, a scanning signal line and a semiconductor layer with a single mask process.

Claims

1. A method for manufacturing an active matrix substrate, the active matrix substrate including a data signal line, a scanning signal line, a transistor connected with the data signal line and the scanning signal line, and a pixel electrode connected with the data signal line via the transistor, said method comprising the steps of:

(i) selectively forming a pattern of a laminated structure, by forming the laminated structure on a substrate, by forming a first photosensitive resin pattern on the laminated structure, and by selectively forming the pattern of the laminated structure by use of the first photosensitive resin pattern, the laminated structure including (a) a metal layer, which is a material of the scanning signal line, (b) a gate insulative layer, and (c) a semiconductor layer, which is a material of the transistor;

(ii) fluorinating a surface of the first photosensitive resin pattern by dry etching with a fluorine gas;

(iii) applying a transparent insulative resin of coating type onto the substrate so that the transparent insulative resin fills a space in the pattern of the laminated structure; and

(iv) removing the first photosensitive resin pattern which has been fluorinated.

2. The method as set forth in claim 1, wherein:

the active matrix substrate includes a drain wire by which the transistor and the pixel electrode are connected with each other;

the step (i) includes the sub-steps of;

after sequentially depositing the metal layer and the gate insulative layer, sequentially depositing a first amorphous silicon layer containing no impurity, a second amorphous silicon layer containing an impurity, and a heat resistant metal layer, the first and second amorphous silicon layers being included in the semiconductor layer; and

forming the pattern of the laminated structure so that the pattern corresponds to the scanning signal line, by selectively removing the heat resistant metal layer, the second amorphous silicon layer, the first amorphous silicon layer, the gate insulative layer, and the metal layer by use of the first photosensitive resin pattern; and

said method further comprises the steps of, after the step (iv);

(v) forming the drain wire and a source wire, by depositing a transparent electrically conductive layer and a second metal layer which includes at least one buffer metal layer and which is a material of the data signal line and the drain wire, and by selectively removing the second metal layer, the transparent electrically conductive layer, the heat resistant metal layer, the second amorphous silicon layer, and the first amorphous silicon layer so as to form (a) the drain wire, which serves also as a pseudo pixel electrode, and (b) the data signal line including a pseudo electrode terminal located outside an image display section;

(vi) forming, on the substrate, a passivation insulative layer having first, second, and third openings respectively provided above the pseudo pixel electrode, above an electrode terminal of the scanning signal line which electrode terminal is located outside the image display section, and above the pseudo electrode terminal of the data signal line, and removing a part of the first amorphous silicon layer and a part of the gate insulative layer which parts correspond to the second opening, so as to expose the electrode terminal of the scanning signal line; and

(vii) removing parts of the buffer metal layer which parts respectively correspond to the first and third openings, so as to expose the pixel electrode and the electrode terminal of the data signal line, and each of the pixel electrode and the electrode terminal of the data signal line being made of the transparent electrically conductive layer.

3. The method as set forth in claim 1, wherein:

the active matrix substrate includes a drain wire by which the transistor and the pixel electrode are connected with each other;

the step (i) includes the sub-steps of;

after sequentially depositing the metal layer and the gate insulative layer, sequentially depositing a first amorphous silicon layer containing no impurity, a second amorphous silicon layer containing an impurity, and a heat resistant metal layer, the first and second amorphous silicon layers being included in the semiconductor layer;

forming the first photosensitive resin pattern on a region of the heat resistant metal layer which region corresponds to the scanning signal line, the first photosensitive resin pattern including one region having a film thickness greater than that of the other region, the one region being above a connection region which is located outside an image display section and in which the scanning signal line and another wire are connected with each other; and

forming the pattern of the laminated structure so that the pattern corresponds to the scanning signal line, by selectively removing the heat resistant metal layer, the second amorphous silicon layer, the first amorphous silicon layer, the gate insulative layer, and the metal layer by use of the first photosensitive resin pattern;

the step (iv) includes the sub-steps of;

reducing the film thicknesses of the first photosensitive resin pattern, so as to expose a part of the heat resistant metal layer which part corresponds to the connection region;

selectively removing the heat resistant metal layer, the second amorphous silicon layer, the first amorphous silicon layer, and the gate insulative layer by use of, as a mask, the first photosensitive resin pattern whose film thicknesses have been reduced, so as to expose a part of the scanning signal line which part is in the connection region; and

removing the first photosensitive resin pattern whose film thicknesses have been reduced; and

said method further comprises the steps of, after the step (iv);

(v) forming the drain wire and a source wire, by depositing a transparent electrically conductive layer and a second metal layer which includes at least one buffer metal layer and which is a material of the data signal line and the drain wire, and by selectively removing the second metal layer, the transparent electrically conductive layer, the heat resistant metal layer, the second amorphous silicon layer, and the first amorphous silicon layer so as to form (i) the drain wire, which serves also as a pseudo pixel electrode, (ii) the data signal line including a pseudo electrode terminal located outside the image display section, and (iii) a pseudo electrode terminal of the scanning signal line, the pseudo electrode terminal of the scanning signal line being formed in the connection region; and

(vi) forming, on the substrate, a passivation insulative layer having openings respectively provided above the pseudo pixel electrode, above the pseudo electrode terminal of the scanning signal line, and above the pseudo electrode terminal of the data signal line, and removing parts of the buffer metal layer which parts correspond to the respective openings, so as to expose the pixel electrode, an electrode terminal of the scanning signal line, and an electrode terminal of the data signal line, and each of the pixel electrode, the electrode terminal of the scanning signal line, and the electrode terminal of the data signal line being made of the transparent electrically conductive layer.

4. The method as set forth in claim 1, wherein:

the active matrix substrate includes a drain wire by which the transistor and the pixel electrode are connected with each other;

the step (i) includes the sub-steps of;

after sequentially depositing the metal layer and the gate insulative layer, sequentially depositing a first amorphous silicon layer containing no impurity and a second amorphous silicon layer containing an impurity, the first and second amorphous silicon layers being included in the semiconductor layer; and

forming the pattern of the laminated structure so that the pattern corresponds to the scanning signal line, by selectively removing the second amorphous silicon layer, the first amorphous silicon layer, the gate insulative layer, and the metal layer by use of the first photosensitive resin pattern; and

said method further comprises the steps of, after the step (iv);

(v) forming the drain wire and a source wire, by depositing a second metal layer which includes at least one buffer metal layer and which is a material of the data signal line and the drain wire, and by selectively removing the second metal layer, the second amorphous silicon layer, and the first amorphous silicon layer so as to form the data signal line, the drain wire, and a height difference offsetting electrode, the height difference offsetting electrode being positioned above a boundary between the transparent insulative resin and an end of the scanning signal line which end is located outside an image display section;

(vi) depositing a passivation insulative layer on the substrate, and thereafter forming a third photosensitive resin pattern on the substrate, the third photosensitive resin pattern having an end whose cross section has an inverse tapered shape, the third photosensitive resin pattern having first, second, and third openings, the first opening being provided in a first region which is in the image display section and includes a part of the drain wire and in which the pixel electrode is to be formed, the second opening being provided in a second region which is outside the image display section and includes the height difference offsetting electrode and in which an electrode terminal of the scanning signal line is to be formed, and the third opening being provided in a third region which is outside the image display section and in which an electrode terminal of the data signal line is to be formed;

(vii) removing, by use of the third photosensitive resin pattern as a mask, (a) parts of the passivation insulative layer which parts respectively correspond to the first and third openings and (b) a part of the passivation insulative layer, a part of the first amorphous silicon layer, and a part of the gate insulative layer which parts correspond to the second opening, so that a part of the drain wire and the transparent insulative resin are exposed in the first opening, a part of the scanning signal line, the height difference offsetting electrode, and the transparent insulative resin are exposed in the second opening, and a part of the data signal line and the transparent insulative resin are exposed in the third opening;

(viii) depositing a transparent electrically conductive layer on the substrate; and

(ix) removing the third photosensitive resin pattern, so that (a) the pixel electrode is formed in the first region including the part of the drain wire, (b) the electrode terminal of the scanning signal line is formed in the second region including the part of the scanning signal line and the height difference offsetting electrode, and (c) the electrode terminal of the data signal line is formed in the third region including the part of the data signal line, and each of the pixel electrode, the electrode terminal of the scanning signal line, and the electrode terminal of the data signal line being made of the transparent electrically conductive layer.

5. The method as set forth in claim 1, wherein:

the active matrix substrate includes a drain wire by which the transistor and the pixel electrode are connected with each other;

the step (i) includes the sub-steps of;

after sequentially depositing the metal layer and the gate insulative layer, sequentially depositing a first amorphous silicon layer containing no impurity and a second amorphous silicon layer containing an impurity, the first and second amorphous silicon layers being included in the semiconductor layer; and

forming the pattern of the laminated structure so that the pattern corresponds to the scanning signal line, by selectively removing the second amorphous silicon layer, the first amorphous silicon layer, the gate insulative layer, and the metal layer by use of the first photosensitive resin pattern; and

said method further comprises the steps of, after the step (iv);

(v) forming the drain wire and a source wire, the step (v) including the sub-steps of;

depositing a second metal layer which includes at least one buffer metal layer and which is a material of the data signal line and the drain wire, and thereafter forming a second photosensitive resin pattern having a first region and a second region, the first region having a film thickness greater than that of the second region, the first region corresponding to the data signal line, the drain wire, and a height difference offsetting electrode positioned above a boundary between the transparent insulative resin and an end of the scanning signal line which end is located outside an image display section, and the second region corresponding to a channel region provided between the data signal line and the drain wire;

selectively removing the second metal layer, the second amorphous silicon layer, and the first amorphous silicon layer by use of the second photosensitive resin pattern as a mask; and

reducing the film thicknesses of the second photosensitive resin pattern so as to expose a part of the second metal layer which part corresponds to the channel region, and selectively removing again the second metal layer, the second amorphous silicon layer, and the first amorphous silicon layer by use of, as a mask, the second photosensitive resin pattern whose film thicknesses have been reduced;

(vi) depositing a passivation insulative layer on the substrate, and thereafter forming a third photosensitive resin pattern on the substrate, the third photosensitive resin pattern having an end whose cross section has an inverse tapered shape, the third photosensitive resin pattern having first, second, and third openings, the first opening being provided in a first region which is in the image display section and includes a part of the drain wire and in which a pixel electrode is to be formed, the second opening being provided in a second region which is outside the image display section and includes the height difference offsetting electrode and in which an electrode terminal of the scanning signal line is to be formed, and the third opening being provided in a third region which is outside the image display section and in which an electrode terminal of the data signal line is to be formed;

(vii) removing, by use of the third photosensitive resin pattern as a mask, (a) parts of the passivation insulative layer which parts respectively correspond to the first and third openings and (b) a part of the passivation insulative layer, a part of the first amorphous silicon layer, and a part of the gate insulative layer which parts correspond to the second opening, so that a part of the drain wire and the transparent insulative resin are exposed in the first opening, a part of the scanning signal line, the height difference offsetting electrode, and the transparent insulative resin are exposed in the second opening, and a part of the data signal line and the transparent insulative resin are exposed in the third opening;

(viii) depositing a transparent electrically conductive layer on the substrate; and

(ix) removing the third photosensitive resin pattern, so that (a) the pixel electrode is formed in the first region including the part of the drain wire, (b) the electrode terminal of the scanning signal line is formed in the second region including the part of the scanning signal line and the height difference offsetting electrode, and (c) the electrode terminal of the data signal line is formed in the third region including the part of the data signal line, and each of the pixel electrode, the electrode terminal of the scanning signal line, and the electrode terminal of the data signal line being made of the transparent electrically conductive layer.

6. The method as set forth in claim 1, wherein:

the active matrix substrate includes a drain wire by which the transistor and the pixel electrode are connected with each other;

the step (i) includes the sub-steps of;

after sequentially depositing the metal layer and the gate insulative layer, sequentially depositing a first amorphous silicon layer containing no impurity and a second amorphous silicon layer containing an impurity, the first and second amorphous silicon layers being included in the semiconductor layer;

forming the first photosensitive resin pattern on a region of the second amorphous silicon layer which region corresponds to the scanning signal line, the first photosensitive resin pattern including one region having a film thickness greater than that of the other region, the one region being above a region in which the semiconductor layer is formed and which is above a gate electrode included in the transistor; and

forming the pattern of the laminated structure so that the pattern corresponds to the scanning signal line, by selectively removing the second amorphous silicon layer, the first amorphous silicon layer, the gate insulative layer, and the metal layer by use of the first photosensitive resin pattern as a mask;

the step (iv) includes the sub-steps of;

reducing the film thicknesses of the first photosensitive resin pattern, so as to expose a part of the second amorphous silicon layer which part is above the scanning signal;

selectively removing the second amorphous silicon layer and the first amorphous silicon layer by use of, as a mask, the first photosensitive resin pattern whose film thicknesses have been reduced, so as to expose a part of the gate insulative layer which part is above the scanning signal line; and

removing the first photosensitive resin pattern whose film thicknesses have been reduced; and

said method further comprises the steps of, after the step (iv);

(v) forming the drain wire and a source wire, by depositing a second metal layer which includes at least one buffer metal layer and which is a material of the data signal line and the drain wire, and by selectively removing the second metal layer, the second amorphous silicon layer, and the first amorphous silicon layer so as to form the data signal line, the drain wire, and a height difference offsetting electrode, the height difference offsetting electrode being positioned above a boundary between the transparent insulative resin and an end of the scanning signal line which end is located outside an image display section;

(vi) depositing a passivation insulative layer on the substrate, and thereafter forming a third photosensitive resin pattern on the substrate, the third photosensitive resin pattern having an end whose cross section has an inverse tapered shape, the third photosensitive resin pattern having first, second, and third openings, the first opening being provided in a first region which is in the image display section and includes a part of the drain wire and in which a pixel electrode is to be formed, the second opening being provided in a second region which is outside the image display section and includes the height difference offsetting electrode and in which an electrode terminal of the scanning signal line is to be formed, and the third opening being provided in a third region which is outside the image display section and in which an electrode terminal of the data signal line is to be formed;

(vii) removing, by use of the third photosensitive resin pattern as a mask, (a) parts of the passivation insulative layer which parts respectively correspond to the first and third openings and (b) a part of the passivation insulative layer, a part of the first amorphous silicon layer, and a part of the gate insulative layer which parts correspond to the second opening, so that a part of the drain wire and the transparent insulative resin are exposed in the first opening, a part of the scanning signal line, the height difference offsetting electrode, and the transparent insulative resin are exposed in the second opening, and a part of the data signal line and the transparent insulative resin are exposed in the third opening;

(viii) depositing a transparent electrically conductive layer on the substrate; and

(ix) removing the third photosensitive resin pattern, so that (a) the pixel electrode is formed in the first region including the part of the drain wire, (b) the electrode terminal of the scanning signal line is formed in the second region including the part of the scanning signal line and the height difference offsetting electrode, and (c) the electrode terminal of the data signal line is formed in the third region including the part of the data signal line, each of the pixel electrode, the electrode terminal of the scanning signal line, and the electrode terminal of the data signal line being made of the transparent electrically conductive layer.

7. The method as set forth in claim 3, further comprising the step of:

(x) forming the openings in the passivation insulative layer formed on the substrate,

the step (x) including the sub-step of;

forming, in the passivation insulative layer, a fourth opening above the scanning signal line, and removing a part of the first amorphous silicon layer which part corresponds to the fourth opening, so that the gate insulative layer and the transparent insulative resin are exposed in the fourth opening.

8. The method as set forth in claim 2, further comprising the step of:

forming the openings in the passivation insulative layer formed on the substrate, wherein the openings are formed by use of a third photosensitive resin pattern which is made of a black pigment photosensitive resin, and the third photosensitive resin pattern is left without being removed after the openings are formed.

9. The method as set forth in claim 1, wherein:

in the step (iii), the transparent insulative resin, which fills the space in the pattern of the laminated structure, is applied so as to have a film thickness equal to or greater than that of a lamination of the metal layer and the gate insulative layer.

10. The method as set forth in claim 1, wherein:

in the step (iii), the transparent insulative resin, which fills the space in the pattern of the laminated structure, is applied so as to have a film thickness equal to or greater than that of the laminated structure including the metal layer, the gate insulative layer, and the semiconductor layer.

11. A method for manufacturing a liquid crystal display device, comprising:

manufacturing an active matrix substrate by a method as set forth in claims 1; and

filling liquid crystal into a space between the active matrix substrate and a counter substrate.

12. The method as set forth in claim 11, wherein:

the liquid crystal display device is a twisted nematic liquid crystal display device.

13. The method as set forth in claim 11, wherein:

the liquid crystal display device is an in-plane switching liquid crystal display device.

14. The method as set forth in claim 11, wherein:

the liquid crystal display device is a vertical alignment liquid crystal display device.