Semiconductor element comprising a low variation substrate diode
First Claim
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1. A method of forming a substrate diode in a semiconductor device, the method comprising:
- forming a well region of said substrate diode in a crystalline material of a substrate of said semiconductor device;
forming a first opening through a first trench isolation structure and a second opening through a second trench isolation structure after forming the well region, said first and second openings extending through a buried insulating layer of said semiconductor device so as to expose a portion of the well regionfilling said first and second openings with a conductive material so as to provide a first contact region and a second contact region of said substrate diode;
forming a PN junction of said substrate diode on the basis of the well region and said conductive material formed in said first opening;
forming a circuit element in and above an active region after filling said first and second openings with said conductive material;
forming an interlayer dielectric material above said active region and said first and second contact regions; and
forming contact elements in said interlayer dielectric material so as to connect to said circuit element and to said first and second contact regions of said substrate diode.
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Abstract
A substrate diode of an SOI device may be formed on the basis of contact regions in an early manufacturing stage, i.e., prior to patterning gate electrode structures of transistors, thereby imparting superior stability to the sensitive diode regions, such as the PN junction. In some illustrative embodiments, only one additional deposition step may be required compared to conventional strategies, thereby providing a very efficient overall process flow.
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Citations
17 Claims
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1. A method of forming a substrate diode in a semiconductor device, the method comprising:
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forming a well region of said substrate diode in a crystalline material of a substrate of said semiconductor device; forming a first opening through a first trench isolation structure and a second opening through a second trench isolation structure after forming the well region, said first and second openings extending through a buried insulating layer of said semiconductor device so as to expose a portion of the well region filling said first and second openings with a conductive material so as to provide a first contact region and a second contact region of said substrate diode; forming a PN junction of said substrate diode on the basis of the well region and said conductive material formed in said first opening; forming a circuit element in and above an active region after filling said first and second openings with said conductive material; forming an interlayer dielectric material above said active region and said first and second contact regions; and forming contact elements in said interlayer dielectric material so as to connect to said circuit element and to said first and second contact regions of said substrate diode. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A method of forming a substrate diode of a semiconductor device, said method comprising:
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forming a well region in a crystalline substrate material of said semiconductor device by implanting a well dopant species through at least a buried insulating layer formed between said crystalline substrate material and a device layer comprising a plurality of active regions and a plurality of isolation structures; forming a first opening and a second opening after forming the well region, wherein the first and second openings extend through an insulating material of at least one of said isolation structures and through said buried insulating material to expose the well region; filling said first and second openings with a conductive material; and forming a transistor in said device layer after filling said first and second openings with a conductive material. - View Dependent Claims (11, 12, 13, 14, 15, 16, 17)
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Specification