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Method for manufacturing a semiconductor device with impurity doped oxide semiconductor

  • US 8,481,377 B2
  • Filed: 02/14/2011
  • Issued: 07/09/2013
  • Est. Priority Date: 02/19/2010
  • Status: Active Grant
First Claim
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1. A method for manufacturing a semiconductor device, comprising the steps of:

  • forming an oxide semiconductor layer over an insulating surface;

    forming a source electrode layer and a drain electrode layer over and partly in contact with the oxide semiconductor layer;

    forming an insulating layer over and in contact with the oxide semiconductor layer, the source electrode layer, and the drain electrode layer;

    forming a gate electrode over the insulating layer and overlapping with the oxide semiconductor layer; and

    adding an impurity element to a part of the oxide semiconductor layer in a self-alignment manner with the use of the gate electrode, the source electrode layer and the drain electrode layer as a mask through the insulating layer,wherein the impurity element is a rare gas.

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