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Methods of fabricating a memory device

  • US 8,481,385 B2
  • Filed: 05/11/2012
  • Issued: 07/09/2013
  • Est. Priority Date: 08/31/2005
  • Status: Active Grant
First Claim
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1. A method of fabricating a memory device, the method comprising;

  • forming a recessed gate within semiconductive material;

    forming a first source/drain region and a second source/drain region adjacent opposing lateral sides of the recessed gate, wherein application of a voltage to the gate results in the formation of a conductive channel between the first and second source/drain regions along a path that is within the semiconductive material;

    forming a charge storage device above the semiconductive material, wherein the charge storage device is electrically coupled to the first source/drain region; and

    forming a conductive data line which electrically and directly physically contacts the second source/drain region in the absence of any separately formed conductive plug extending between the second source/drain region and the conductive data line in a completed construction of the memory device.

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