Light-emitting display device and electronic device including the same
First Claim
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1. A light-emitting display device comprising:
- a scan line;
a first pixel including a first transistor and a first light-emitting element; and
a second pixel including a second transistor and a second light-emitting element,wherein the first pixel is electrically connected to the scan line,wherein the first transistor includes an oxide semiconductor layer, the oxide semiconductor layer being over the scan line with a gate insulating film therebetween,wherein a width of the oxide semiconductor layer is larger than that of the scan line,wherein the second light-emitting element and the oxide semiconductor layer overlap with each other, andwherein the first light-emitting element and the oxide semiconductor layer do not overlap with each other.
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Abstract
An object is to provide a light-emitting display device in which a pixel including a thin film transistor using an oxide semiconductor has a high aperture ratio. The light-emitting display device includes a plurality of pixels each including a thin film transistor and a light-emitting element. The pixel is electrically connected to a first wiring functioning as a scan line. The thin film transistor includes an oxide semiconductor layer over the first wiring with a gate insulating film therebetween. The oxide semiconductor layer is extended beyond the edge of a region where the first wiring is provided. The light-emitting element and the oxide semiconductor layer overlap with each other.
126 Citations
26 Claims
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1. A light-emitting display device comprising:
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a scan line; a first pixel including a first transistor and a first light-emitting element; and a second pixel including a second transistor and a second light-emitting element, wherein the first pixel is electrically connected to the scan line, wherein the first transistor includes an oxide semiconductor layer, the oxide semiconductor layer being over the scan line with a gate insulating film therebetween, wherein a width of the oxide semiconductor layer is larger than that of the scan line, wherein the second light-emitting element and the oxide semiconductor layer overlap with each other, and wherein the first light-emitting element and the oxide semiconductor layer do not overlap with each other. - View Dependent Claims (2, 3, 4, 5)
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6. A light-emitting display device comprising:
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a scan line; a signal line; a first pixel including a first transistor and a first light-emitting element; and a second pixel including a second transistor and a second light-emitting element, wherein the first pixel is electrically connected to the scan line and the signal line, wherein the first transistor includes an oxide semiconductor layer over the scan line with a gate insulating film therebetween, wherein a width of the oxide semiconductor layer is larger than that of the scan line, wherein the signal line includes a portion which is extended along a longitudinal direction of the scan line, the portion being over the scan line, wherein the second light-emitting element and the oxide semiconductor layer overlap with each other, and wherein the first light-emitting element and the oxide semiconductor layer do not overlap with each other. - View Dependent Claims (7, 8, 9, 10, 11, 12)
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13. A light-emitting display device comprising:
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a scan line; a signal line; a first pixel including a first transistor, a second transistor, a first wiring, and a first light-emitting element; and a second pixel including a third transistor, a fourth transistor, and a second light-emitting element, wherein the first pixel is electrically connected to the scan line and the signal line, wherein the first transistor includes an oxide semiconductor layer over the scan line with a gate insulating film therebetween, wherein the signal line includes a portion which is extended along a longitudinal direction of the scan line, the portion being over the scan line, wherein the first wiring is in contact with the oxide semiconductor layer and is electrically connected to the second transistor, wherein at least a part of the first wiring is overlapped with the scan line, wherein a width of the oxide semiconductor layer is larger than that of the scan line, wherein the second light-emitting element and the oxide semiconductor layer overlap with each other, and wherein the first light-emitting element and the oxide semiconductor layer do not overlap with each other. - View Dependent Claims (14, 15, 16, 17, 18, 19)
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20. A light-emitting display device comprising:
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a scan line; a signal line; a power source line; a first pixel including a first transistor, a second transistor, a first wiring, a second wiring, and a first light-emitting element; and a second pixel including a third transistor, a fourth transistor, and a second light-emitting element, wherein the first pixel is electrically connected to the scan line and the signal line, wherein the first transistor includes an oxide semiconductor layer over the scan line with a gate insulating film therebetween, wherein the first wiring is in contact with the oxide semiconductor layer and is electrically connected to the second wiring, wherein the scan line and the second wiring comprise the same material, wherein the second wiring is not overlapped with the power source line, wherein the second wiring is configured to be a gate of the second transistor, wherein a width of the oxide semiconductor layer is larger than that of the scan line, and wherein the second light-emitting element and the oxide semiconductor layer overlap with each other. - View Dependent Claims (21, 22, 23, 24, 25, 26)
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Specification
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Current AssigneeSemiconductor Energy Laboratory Co., Ltd.
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Original AssigneeSemiconductor Energy Laboratory Co., Ltd.
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InventorsArasawa, Ryo, Shishido, Hideaki
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Primary Examiner(s)Nguyen, Khiem D
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Application NumberUS12/897,299Publication NumberTime in Patent Office1,009 DaysField of Search438149-151, 257/59, 257/72, 257/E51.005, 257/E29.151, 349 41- 43US Class Current257/59CPC Class CodesH01L 27/1225 with semiconductor material...H01L 27/124 with a particular compositi...H01L 33/16 with a particular crystal s...
